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(a) Field dependence of the SF resistance Ri(B), calculated using Eq.(2), at different constant temperatures. (b) B ′ max vs temperature obtained from (a). The inset shows the temperature dependence of the carrier mobility.
Source publication
In spite of 40 years of experimental studies and several theoretical proposals, an overall interpretation of the complex behavior of the magnetoresistance (MR) of multilayer graphene, i.e. graphite, at high fields ($B \lesssim 70~$T) and in a broad temperature range is still lacking. Part of the complexity is due to the contribution of stacking fau...
Contexts in source publication
Context 1
... Eq.(3) in Eq. (2), we obtain R i (B) plotted in Fig.3(a). The results indicate that at T < 25 K, R(B) ≃ R i (B) because the semiconducting contribution becomes negligible, i.e. (R 2H (B, T )/R(B, T ))| T <25K ≫ 1. ...
Context 2
... results indicate that at T < 25 K, R(B) ≃ R i (B) because the semiconducting contribution becomes negligible, i.e. (R 2H (B, T )/R(B, T ))| T <25K ≫ 1. We further note that R i (B) shows a maximum at B ′ max ≃ 18 T, which does not depend significantly on T within error, see Fig.3(b). These results indicate that the temperature shift of B max (T ) in the MR, see Fig.2(b), is an artifact caused by the growing influence at T > 25 K of the semiconducting contribution R 2H (B) in parallel to the SFs one. ...
Context 3
... results indicate that the temperature shift of B max (T ) in the MR, see Fig.2(b), is an artifact caused by the growing influence at T > 25 K of the semiconducting contribution R 2H (B) in parallel to the SFs one. Regarding the parameters used, the charge imbalance between electrons and holes was considered constant ∆n/n = 0.05, and the obtained mobility µ(T ) decreases with temperature (see inset in Fig.3(b)), in qualitative agreement with the behavior found in the literature [53,54]. ...
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... MR of the SF (R i (B)) plotted in Fig.3(a), resembles the one observed in granular superconductors, like granular Al in a Ge matrix or InO films [55][56][57]. ...
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... expect therefore that the field at which R i (B) starts to saturate can be considered as a critical field B c2 . This appears to be the case at a field B ≃ B c2 ∼ 50 T ∼ 3B ′ max at T < 10 K, see Fig.3(a). However, we expect that B c2 decreases with temperature, which is not clearly observed in R i (B) of Fig.3(a) at T 10 K. ...
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... appears to be the case at a field B ≃ B c2 ∼ 50 T ∼ 3B ′ max at T < 10 K, see Fig.3(a). However, we expect that B c2 decreases with temperature, which is not clearly observed in R i (B) of Fig.3(a) at T 10 K. ...
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... analytical expression for the resistance of this 2D system within the effective medium approximation has been obtained in [49]. In particular, at fields near the critical field or at high enough temperatures the resistance between superconducting grains reaches a critical resistance R JC (T ), which self-consistent solution (see Fig.3 in [49]) follows nearly a ln(T /T c ) at T /T c > 0.2, independently of the value of the assumed charging energy. We compare qualitatively this prediction with the difference between the normalized resistance in the normal state R ′ n and the normalized SF resistance (R ...
Context 8
... Eq.(3) in Eq. (2), we obtain R i (B) plotted in Fig.3(a). The results indicate that at T < 25 K, R(B) ≃ R i (B) because the semiconducting contribution becomes negligible, i.e. (R 2H (B, T )/R(B, T ))| T <25K ≫ 1. ...
Context 9
... results indicate that at T < 25 K, R(B) ≃ R i (B) because the semiconducting contribution becomes negligible, i.e. (R 2H (B, T )/R(B, T ))| T <25K ≫ 1. We further note that R i (B) shows a maximum at B ′ max ≃ 18 T, which does not depend significantly on T within error, see Fig.3(b). These results indicate that the temperature shift of B max (T ) in the MR, see Fig.2(b), is an artifact caused by the growing influence at T > 25 K of the semiconducting contribution R 2H (B) in parallel to the SFs one. ...
Context 10
... results indicate that the temperature shift of B max (T ) in the MR, see Fig.2(b), is an artifact caused by the growing influence at T > 25 K of the semiconducting contribution R 2H (B) in parallel to the SFs one. Regarding the parameters used, the charge imbalance between electrons and holes was considered constant ∆n/n = 0.05, and the obtained mobility µ(T ) decreases with temperature (see inset in Fig.3(b)), in qualitative agreement with the behavior found in the literature [53,54]. ...
Context 11
... MR of the SF (R i (B)) plotted in Fig.3(a), resembles the one observed in granular superconductors, like granular Al in a Ge matrix or InO films [55][56][57]. ...
Context 12
... expect therefore that the field at which R i (B) starts to saturate can be considered as a critical field B c2 . This appears to be the case at a field B ≃ B c2 ∼ 50 T ∼ 3B ′ max at T < 10 K, see Fig.3(a). However, we expect that B c2 decreases with temperature, which is not clearly observed in R i (B) of Fig.3(a) at T 10 K. ...
Context 13
... appears to be the case at a field B ≃ B c2 ∼ 50 T ∼ 3B ′ max at T < 10 K, see Fig.3(a). However, we expect that B c2 decreases with temperature, which is not clearly observed in R i (B) of Fig.3(a) at T 10 K. ...
Context 14
... analytical expression for the resistance of this 2D system within the effective medium approximation has been obtained in [49]. In particular, at fields near the critical field or at high enough temperatures the resistance between superconducting grains reaches a critical resistance R JC (T ), which self-consistent solution (see Fig.3 in [49]) follows nearly a ln(T /T c ) at T /T c > 0.2, independently of the value of the assumed charging energy. We compare qualitatively this prediction with the difference between the normalized resistance in the normal state R ′ n and the normalized SF resistance (R ...
