Figure - available from: Applied Physics B
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a Diagram of a TeO2:Er³⁺–Si3N4 DBR cavity. b Scanning electron microscope image of fabricated Si3N4 waveguide gratings showing the transition between a straight section and a corrugated section for the different grating designs analyzed in this work. Inset: electric field profile for the 1550 nm fundamental TE mode in a hybrid TeO2:Er³⁺–Si3N4 waveguide showing strong overlap with both the TeO2:Er³⁺ gain layer and the Si3N4 strip
Source publication
We demonstrate integrated on-chip erbium-doped tellurite (TeO2:Er³⁺) waveguide lasers fabricated on a wafer-scale silicon nitride platform. A 0.352-µm-thick TeO2:Er³⁺ coating was deposited as an active medium on 0.2-µm-thick, 1.2- and 1.6-µm-wide, and 22-mm-long silicon nitride waveguides with sidewall-patterned asymmetrical distributed Bragg refle...
Citations
... However, these laser systems often involve a complex manufacturing process, resulting in elevated maintenance costs. Advancements in micro and nanotechnology have supported the utilization of integrated erbium-doped thin films to fabricate monolithic waveguide amplifiers and lasers [5], including the gain platforms of aluminum oxide [6], tellurite [7], silicon nitride [8], lithium niobate [9,10], etc. Among those platforms, lithium niobate on an insulator (LNOI) has diverse physical phenomena, encompassing electro-optical (EO) [11,12], nonlinear [13], photorefractive, piezoelectric, and pyroelectric effects, manifesting applicability to various application scenarios [14]. ...
We demonstrate a monolithic tunable dual-wavelength laser fabricated on erbium-doped lithium niobate on an insulator (Er:LNOI). The dual-wavelength laser enables independent tuning with a continuously linear electro-optic (EO)-modulated tuning range of 11.875 GHz at a tuning efficiency of 0.63 pm/V. Tunable microwave generation within 50 GHz with a maximum extinction ratio of 35 dB is experimentally demonstrated by further exploring the charge accumulation effect in LNOI. The monolithic design of this work paves the way for microscale integration of laser devices, presenting significant prospects in photonics research and applications.
