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(a) Current-voltage characteristics shown in semi-log plot measured for a representative ITO/ZTO/PEDOT:PSS Schottky diode processed by sol-gel and SCS method using spin coating. (b) Solution ageing effect on ITO/ZTO/PEDOT:PSS diodes produced using the SCS route after 3 and 5 months.
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Printed metal oxide devices have been widely desired in flexible electronic applications to allow direct integration on foils and to reduce electronic waste and associated costs. Especially, semiconductor devices made from non-critical raw materials, such as Zn, Sn (and not, for example, In), have gained much interest. Despite considerable progress...
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Context 1
... the SCS method is used, the M-O-M bonding of ZTO is enhanced in comparison with the sol-gel approach and the M-OH peak is reduced. In all conditions the tin (Sn 3d 5/2 ) and the zinc (Zn 2p 3/2 ) presented peaks with a binding energy at 486.7 ± 0.1 eV and 1022.2 ± 0.1 eV, respectively (see figure S3 in the supporting information). In relation to Zn:Sn theoretical stoichiometric value (1), Zn:Snratio of 1.59 and 1.26 was achieved for the sol-gel and combustion methods, respectively. ...
Context 2
... the top Schottky contact, conductive polymer poly (3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) was selected as the initial trials performed using printed Ag contacts showed unstable switching characteristics, likely due to Ag ion migration in the oxide layer [42]. Figure 3(a) depicts I-V characteristics of the spin-coated vertical ITO/ZTO/PEDOT:PSS-diodes with a sweep from negative to positive voltages and back with stable diode characteristics. ...
Context 3
... now focus on the ZTO diodes obtained from the SCS route. To determine the stability and use-life of the ZTO SCS ink, tests were performed by producing ZTO diodes with inks aged for 3 and 5 months, as shown in figure 3(b). When the ZTO SCS inks are stored in fridge temperature, no significant changes in the diode performance were noticed when comparing the devices produced with aged inks with the devices produced using the fresh inks (initial), which further supports the reliability of the SCS ink. ...
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Citations
... Smart label 4 (SL4) is similar to SL3, but the printed silver is replaced with printed copper and SMD components for power management with printed diodes [61] and thin film transistors (TFTs) [62]. There is also a possibility to combine some of the process steps to further streamline the manufacturing phase. ...
This paper presents a sustainability benchmarking tool, the GreenTool, to compare different electronic product concepts, specifically printed ones, with each other from the sustainability perspective. The purpose is to increase awareness of different aspects of sustainability and support the design of more sustainable electronics. This tool is built on European and global sustainability regulations and recommendations, and it considers environmental, economic, and social sustainability aspects in seven different criteria, each with several sub-criteria that are the actual categories used in the comparison. The tool uses scientific and industrial information as input, as well as a technical understanding of the new and baseline concepts to be compared to properly support sustainability benchmarking. In this paper, we further present an example comparison of four smart label product concepts, one of which is the commercial baseline concept, and the other three are developmental concepts. The biggest differences among the product concepts were found in the categories of ‘raw materials’, ‘manufacturing’, and ‘logistics’ criteria, where the developmental concepts based on manufacturing by printing and bio-based materials gave environmental benefits over the baseline. In the other criteria, the differences were smaller, but the developmental concepts also provided slight improvements in sustainability. The GreenTool can be considered suitable for qualitative sustainability comparisons in product concept design.
In this work, bottom-Schottky-structure InGaZnOx (IGZO) Schottky barrier diodes (SBDs) with sputtered PtOx anodes were fabricated and annealed in oxygen at different temperatures. Critical parameters and negative bias stress (NBS) stability of SBDs with different annealing temperatures are investigated. With the annealing temperature increases, the barrier height and rectification ratio of the SBDs exhibited a rising-then-declining trend, while the ideality factor slightly increased until 200 °C. The SBDs show up overall reliability except for a leakage current rising trend under light, which can be attributed to free electron generation from the ionized oxygen vacancy. Among all the SBDs, the 175 °C annealed ones exhibited the best overall performance, including a high barrier height of 0.89 eV, an ideality factor of 1.14, and a large rectification ratio of over 108. Compared to the initial SBDs, the annealed ones showed up great improvement in NBS stability except for the 200 °C annealed ones, which was permanently degraded and not able to recover to original states. According to experimental result analysis and IGZO material characteristics, a stability model based on the subgap trap transition from VO2+ to VO and new VO2+ creation was proposed, which applies to both the short-term and long-term NBS tests. The results above demonstrate that oxygen annealing at appropriate temperature is an effective method to improve both device performance and NBS stability for PtOx–IGZO SBDs.
High quality thin film p‐n junction diodes with high rectification ratios and low ideality factors have been fabricated from metal oxides, such as amorphous oxide semiconductors (AOSs), and characterized. Plasma treatment of interfaces has been demonstrated to improve devices made from AOSs, using current–voltage (I–V) measurements. However, capacitance–voltage (C–V) measurements of the devices have been scarcely reported in the literature. Therefore, the focus of this work is characterization of cuprous oxide (Cu2O)/amorphous zinc‐tin oxide (a‐ZTO) thin film heterojunction diodes using C–V analysis. Performance differences of plasma‐treated and untreated diodes that are difficult to observe in I–V analysis are more prominent in C–V analysis. Moreover, C–V analysis allows extraction of charge density profiles, which is a measure of the defect state density that led to intrinsic doping. The variation of doping densities of the untreated diode across the full range of applied reverse bias is shown to be up to 2 orders of magnitude, while those of the treated diodes are within a factor of 10 only. Junction charge profiles, interfacial charge depletion, and accumulation that are key features of rectifying diodes are shown to be clearly distinct between untreated, nitrogen‐treated, and oxygen‐treated diodes, thus explaining why oxygen‐treated diodes are superior.
Metal-oxide-semiconductor-based thin-film transistors (TFTs) are exploited in display backplanes and X-ray detectors fabricated by vacuum deposition and lithographic patterning. However, there is growing interest to use scalable printing technologies to lower the environmental impact and cost of processing. There have been substantial research efforts on oxide dielectric and semiconductor materials and their interfaces. Materials for the source/drain (S/D) contact electrodes and their interface to the semiconductor have received less attention, particularly concerning the usage of printing processes. Specific contact resistivity of oxide TFTs with print-patterned S/D contacts can be 10⁻² to 10¹ Ω cm², significantly higher than vacuum-deposited contacts around 10⁻⁵ to 10⁻³ Ω cm². Problems at the semiconductor/S/D interface, such as large contact resistance, poor adhesion, or cross-interface contact material migration, affect device characteristics causing hysteresis loops, kink or step-like distortion, and threshold voltage shift. This work reviews advances in materials and fabrication methods of print-patterned S/D electrodes for oxide TFTs. Differences in characterization methods among existing literature hamper comparing the performance of print-patterned S/D contacts. Therefore, systematic and standardized measurements are proposed to assist identification of possible problems, which to some degree can then be mitigated by device fabrication strategies, facilitating well-performing printed contact electrodes for metal-oxide TFTs. © 2023 The Authors. Advanced Materials Interfaces published by Wiley-VCH GmbH.
Transparent heaters (TH) have a lot of potential in flexible and wearable applications. Consequently, interest in using nanomaterials, such as metallic networks, grids, and meshes, has expanded as an alternative to conventional transparent conductive oxides like indium tin oxide. In particular, silver nanowire (AgNW) networks are very promising transparent and flexible electrodes thanks to their optimum physical properties and the possibility to obtain them by low-cost fabrication techniques. However, AgNW networks suffer from instabilities that affect their electrical performance at high operating voltages or over time and thus require a protective layer, often deposited by vacuum-based techniques. In this work, we implemented a low-cost solution-based aluminum oxide (AlOx) coating produced by combustion synthesis to encapsulate spray-coated AgNW networks. The TH with an AlOx coating obtained from a 0.4 M precursor solution concentration presents the best compromise between optical transmittance and electrical resistance. Besides this, such a coating provides a robust protection against corrosion under accelerated environmental stress (relative humidity = 80%; temperature = 70 °C) up to 7 days. As a proof-of-concept, a 50 × 50 mm2 TH was fabricated and tested as a defroster (down to −21 °C) showing a highly reproducible heating performance (up to 90 °C at 6 V) and stability for 12 h. In addition, different morphologies of the AlOx thin film, namely smooth or porous, can be obtained when either conventional thermal annealing or Joule heating of AgNWs is used, respectively, to carry out the combustion reaction. This offers a promising tunability for different final applications.
