Figure - available from: Advanced Photonics Research
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a) Cross‐sectional scanning transmission electron microscope (STEM) image of the whole structure, b) four sets of SLSs, c) transmission electronic microscope (TEM) image of Si/GaAs interface, d) atomic force microscopy (AFM) image of the GaAs/Si surface before laser structure growth, and e) ECCI of the wafer surface after GaAs pseudosubstrate growth.
Source publication
A silicon‐based room temperature (RT) continuous wave (CW) operation quantum well (QW) laser emitting at 850 nm is reported in this article. By applying the dislocation filter superlattice, the threading dislocation density of the GaAs pseudosubstrate on Si is reduced to 1.8 × 10⁷ cm⁻². The metal‐organic chemical vapor deposition‐grown laser struct...
