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(a) Cross-section of rectangular quantum dot. The semiconductor material consists of an undoped AlGaAs(7nm)/InGaAs(12nm)/AlGaAs(7nm) double barrier structure sandwiched between n-doped GaAs source and drain electrodes. A gate electrode surrounds the pillar and is used to control the electrostatic confinement in the quantum dot. A dc bias voltage, V , is applied between source and drain and current, I, flows vertically through the pillar. The gate voltage, Vg, can change the number of confined electrons, N , one-by-one. A magnetic field, B, is applied along the vertical axis. (b) Scanning electron micrograph of a quantum dot with dimensions 0.45 × 0.6 µm 2 and height of ∼ 0.5 µm.

(a) Cross-section of rectangular quantum dot. The semiconductor material consists of an undoped AlGaAs(7nm)/InGaAs(12nm)/AlGaAs(7nm) double barrier structure sandwiched between n-doped GaAs source and drain electrodes. A gate electrode surrounds the pillar and is used to control the electrostatic confinement in the quantum dot. A dc bias voltage, V , is applied between source and drain and current, I, flows vertically through the pillar. The gate voltage, Vg, can change the number of confined electrons, N , one-by-one. A magnetic field, B, is applied along the vertical axis. (b) Scanning electron micrograph of a quantum dot with dimensions 0.45 × 0.6 µm 2 and height of ∼ 0.5 µm.

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We review the peculiarities of transport through a quantum dot caused by the spin transition in its ground state. Such transitions can be induced by a magnetic field. Tunneling of electrons between the dot and leads mixes the states belonging to the ground state manifold of the dot. Unlike the conventional Kondo effect, this mixing, which occurs on...

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... quantum dot has the external shape of a rect- angular pillar (see Fig. 5) and an internal confinement potential close to a two-dimensional ellipse [8]. The tun- nel barriers between the quantum dot and the source and drain electrodes are thinner than in other devices such that higher-order tunneling processes are enhanced. Fig. 6 shows the linear response conductance G versus gate voltage V g , and magnetic ...

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