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(a) Absorption spectrum and PL spectrum of the CsPbBr 3 thin films grown at 150°C; the inset shows a plot of ( a h ν ) 2 versus h ν . (b) Temperature-dependent PL spectra.
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All-inorganic perovskite CsPbBr 3 thin films have been prepared on Si (100) substrate by a pulsed-laser deposition (PLD) technique, and the morphology, structure, absorbance, and photoluminescence properties of CsPbBr 3 thin films are investigated. A photodetector based on CsPbBr 3 / n - Si heterojunction has been fabricated, and the performances o...
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... Photodetectors comprised of a single semiconductor material have the limitation of a narrow-band detection, in which only a small range of wavelengths can be detected with high sensitivity. To increase the absorption of the incident light and the spectral sensitivity of photodetectors, various heterostructures have been investigated such as CsPbBr3/ Si(100) [7], Al 2 O 3 /SiO 2 /4H-SiC [8], AlGaN/GaN-on-Si with Ti/Al/Pt/Au ohmic contacts [5], WSe 2 /polyimide (PI) [9], ZnO-CdS core-shell Micro/nanowire [10], Ga 2 O 3 /SiC [11], In 2 S 3 /glass [12], Cd 3 As 2 /MoS 2 [13], and Sb 2 Te 3 /n-Si [14]. Additionally, the research on self-powered devices has been intensified due to the increased demand for fabricating sustainable and eco-friendly electronic/photonic devices [15][16][17][18][19][20]. ...
This study reports a self-powered 3C-SiC/Si heterostructure photodetector in both metal-semiconductor-metal (MSM) and heterojunction (HET) configurations and capable of operating under ultraviolet and visible light (UV-VIS). The single crystalline 3C-SiC thin film was grown epitaxially on a Si (111) substrate by employing a two-step growth process. MSM configuration exhibited a peak responsivity of 0.334 A/W and a specific detectivity of 5.4 x 10 ¹¹ cm.Hz 1/2 .W ⁻¹ (Jones) under white light illumination. However, in the UV region, photocurrent showed an increasing behavior with a decrease in the UV wavelength from 365 nm to 254 nm. The peak responsivity and specific detectivity values of the HET configuration were also determined under white light illumination with 0.167 A/W and 4.4 x 10 ¹¹ Jones, respectively. Furthermore, both devices exhibited very fast rise and decay times as 3.8 ms and 3.6 ms for the MSM, and 6 ms and 8 ms for the HET configuration (fastest reported on 3C-SiC). In brief, our self-powered 3C-SiC/Si heterostructure with multiband (UV-VIS) photodetection sensitivity and fast speed could offer new solutions for the eco-friendly and sustainable optoelectronic applications.
... Most of these encouraging results refer to X-ray-, γ-ray-, or α-particle-induced scintillation in single crystals whose growth is time-consuming and their application in flexible architectures is not allowed. However, very few articles report on scintillation properties of perovskite films [27] for which two different approaches are generally used for their growth based on solution-based methods [28,29,30,31] and dry vacuum with [32,33,34,35,36]. ...
Although the field of solar cells is the most popular application of perovskite materials, their use in radiation detection applications is emerging. The success of perovskites as radiation detectors rests partly on the same material properties that have led to successful optoelectronics applications, meaning that other specific properties, like large stopping power, high mobility lifetime product, fast response, and large bulk resistance, play a role. In this respect, inorganic perovskites are attracting a lot of attention as scintillator materials with performances sensitive to material shape (single crystals, nanocrystals, and thin films) and growth methods. In this study, we report on the morphological, structural, and optical response of thin CsPbBr 3 -based perovskite films, deposited by Pulsed Laser Deposition (PLD) and post-growth annealed at 350°C in air, following excitation by different particle sources. The annealing treatment resulted in a prompt structural refinement, grain growth, and oxygen bonding to the Pb phase together with an enrichment of the surface in chemo-adsorbed oxygen probably due to Cs–O interactions, as evidenced by X-ray photoelectron spectroscopy. The film behavior under 2 MeV H ⁺ ion beam irradiation at different fluences was analyzed together with its scintillation properties following an interaction with α particles from an Am-241 radioactive source demonstrating a very fast response for an inorganic material (∼5ns) and a photoelectron yield of about ∼47% with respect to a commercial CsI:Tl scintillator.
... T he all-inorganic cesium lead tribromide perovskite (CsPbBr 3 ) is an attractive material with several perspective applications in photovoltaics, 1 photodetectors, 2,3 and light emitting devices 4,5 due to its optoelectronic properties 6,7 and various fabrication methods. 8−10 Particularly, in the field of ionizing energy detection, many studies have been focused on thin film approaches, 9,11 yet the use of millimeter-thick single crystals has gained more attention recently. ...
CsPbBr3 single crystals have potential for application in ionizing-radiation detection devices due to their optimal optoelectronic properties. Yet, their mixed ionic− electronic conductivity produces instability and hysteretic artifacts hindering the long-term device operation. Herein, we report an electrical characterization of CsPbBr3 single crystals operating up to the time scale of hours. Our fast time-of-flight measurements reveal bulk mobilities of 13−26 cm^2/Vs with a negative voltage bias dependency. By means of a guard ring (GR) configuration, we separate bulk and surface mobilities showing significant qualitative and quantitative transport differences. Our experiments of current transients and impedance spectroscopy indicate the formation of several regimes of space-charge-limited current (SCLC) associated with mechanisms similar to the Poole−Frenkel ionized-trap-assisted transport. We show that the ionic-SCLC seems to be an operational mode in this lead halide perovskite, despite the fact that experiments can be designed where the contribution of mobile ions to transport is negligible.
... Our work demonstrates a simple and inexpensive route towards fabricating high-performance heterojunction-based silicon photodetectors operating in the visible and near infrared regions, which can be significantly used for the detection of low power signal applications. 1.09 at 450 nm 3.6 × 101 2 at 400 nm 3 × 10 3 at 400 CsPbBr3/n-Si [28] 0.6 at 520 nm 9.5 × 10 11 at 520 nm 1.4 × 10 2 at 520 nm Graphene/ZnO/silicon [29] 0.26 at 400 nm 3.9 × 10 13 at 400 nm 80 at 400 nm Sb 2 S 3/ Si [30] 0.29 at 500 nm 1.6 × 10 11 at 500 nm 72 at 500 nm CdO/Si [31] 0.5 at 600 nm 7 × 10 11 at 600 nm 62 at 600 nm Quantum efficency (%) *10² Specific detectivity (Jones) ...
In this study, we present a high-performance HgI2 nanotubes/Si heterojunction photodetector by a simple one-step pulsed laser ablation in ethanol at a laser fluence of 12.7 J/cm2. The structural and optical properties of HgI2 nanotubes (NTs) are studied. The X-ray diffraction (XRD) measurement shows the presence of the mixture of tetragonal and orthorhombic phases of HgI2. The optical properties results show that the optical energy gap of HgI2 NTs was 2.98 eV measured at room temperature. The photoluminescence (PL) spectrum of HgI2 displays a single emission centered at 535 nm. Scanning electron microscope (SEM) image show the formation of nanotubes and spherical nanoparticles with an average particle size of 23 nm. The transmission electron microscope (TEM) image of HgI2 confirms the formation of nanotubes morphology with an average diameter of 80 nm and an average length of 1.6 μm. The current–voltage characteristics of HgI2 NTs/p-Si heterojunction were measured at dark and illumination. The HgI2 nanotubes/Si photodetector is sensitive to the spectral region ranging from visible to near infrared region. This photodetector presents a responsivity of up-to 1.09 A/W at 450 nm under an external bias voltage of 5 V. The specific detectivity (D*) and external quantum efficiency (EQE) of the photodetector are 3.6 × 1012 Jones and 3 × 102% at 400 nm, respectively, without using post annealing. The fabricated photodetector has good linearity characteristics with a large linear dynamic region, and the saturation in photocurrent is observed at 180 mW/cm2. The figures of merit of the fabricated photodetector are compared with those of some heterojunction-based silicon photodetectors.
... 42 Zhang et al. reported the CPB polycrystalline thin films grown by PLD on silicon substrates and demonstrated a CsPbBr 3 /n-Si heterojunction photodetector with high peak responsivity at 520 nm. 43 Up to now, the PLD growth technique has been only successfully applied for polycrystalline halide perovskite thin films and related devices. ...
... Recently, CsPbBr 3 thin films were deposited by PLD using targets prepared by pressing a stoichiometric mixture of PbBr 2 and CsBr powders (molar ratio 1:1) under a pressure of 40 MPa [41]. Although the deposition fluence and target-to-substrate distance are not indicated to achieve a repeatability of the PLD deposition, elemental and morphological characterizations pointed out that a growth temperature of 150 • C is needed to obtain good quality CsPbBr 3 thin films. ...
All-inorganic cesium lead bromine (CsPbBr3) perovskites have gained a tremendous potential in optoelectronics due to interesting photophysical properties and much better stability than the hybrid counterparts. Although pulsed laser deposition (PLD) is a promising alternative to solvent-based and/or thermal deposition approaches due to its versatility in depositing multi-elemental materials, deep understanding of the implications of both target composition and PLD mechanisms on the properties of CsPbBr3 films is still missing. In this paper, we deal with thermally assisted preparation of mechano-chemically synthesized CsPbBr3 ablation targets to grow CsPbBr3 films by PLD at the fluence 2 J/cm2. We study both Cs rich- and stoichiometric PbBr2-CsBr mixture-based ablation targets and point out compositional deviations of the associated films resulting from the mass distribution of the PLD-generated plasma plume. Contrary to the conventional meaning that PLD guarantees congruent elemental transfer from the target to the substrate, our study demonstrates cation off-stoichiometry of PLD-grown CsPbBr3 films depending on composition and thermal treatment of the ablation target. The implications of the observed enrichment in the heavier element (Pb) and deficiency in the lighter element (Br) of the PLD-grown films are discussed in terms of optical response and with the perspective of providing operative guidelines and future PLD-deposition strategies of inorganic perovskites.
... Due to the outstanding optoelectronic properties, such as a large absorption coefficient, excellent carrier mobility, tunable band gap, and high photoluminescence quantum yield, metal halide perovskites (ABX 3 , X = Cl, Br, I) have become promising candidates for a new generation of optoelectronic devices, including solar cells [1,2], light-emitting diodes (LEDs) [3,4], photodetectors [5,6], and lasers [7]. Compared to the hybrid organic-inorganic perovskites (A = CH 3 NH + 3 (MA) or CH(NH 2 ) 2+ (FA)), the all-inorganic perovskites (A = Cs) have been attracting more attention owing to their higher thermal stability. ...
All-inorganic lead-free perovskite ${{\rm{Cs}}_3}{{\rm{Cu}}_2}{{\rm{I}}_5}$ C s 3 C u 2 I 5 thin films were prepared using pulsed laser deposition. Effects of the substrate temperature, laser energy, and laser frequency on the film structure and optoelectronic properties were studied. A heterojunction photodetector based on ${{\rm{Cs}}_3}{{\rm{Cu}}_2}{{\rm{I}}_5}/{\rm{n}} - {\rm{Si}}$ C s 3 C u 2 I 5 / n − S i was constructed, and the deep-ultraviolet photoresponse was obtained. A high ${{\rm{I}}_{\rm{light}}}/{{\rm{I}}_{\rm{dark}}}$ I l i g h t / I d a r k ratio of 130 was achieved at ${-}{1.3}\;{\rm{V}}$ − 1.3 V , and the peak response of the heterojunction photodetector was 70.8 mA/W (280 nm), with the corresponding specific detectivity of ${9.44} \times {{10}^{11}}\;{\rm{cm}} \cdot {{\rm{Hz}}^{1/2}} \cdot {{\rm{W}}^{- 1}}$ 9.44 × 10 11 c m ⋅ H z 1 / 2 ⋅ W − 1 . Moreover, the device showed good stability after being exposed to air for 30 days.
... Recently, PLD-grown CsPbBr 3 , MAxFA 1−x SnI 3 , and MA 0.2 FA 0.8 SnI 3 were also reported. [102][103][104] Considering the advantages of PLD for conformal deposition and stoichiometric transfer, it is worth exploring this method further, e.g., in a monolithic tandem solar cell application, as will be described in Sec. III B. The main challenge for PLD lies with the organic compounds, as the high energy laser may decompose the molecules. ...
The adoption of new thin-film materials in high-end technologies, such as monolithic tandem solar cells and integrated circuits, demands fabrication processes that allow a high level of control over film properties such as thickness, conformality, composition, and crystal structure. Achieving this with traditional optoelectronic materials, such as silicon, indium phosphide, gallium arsenide, silicon nitride, and several metal oxides, has opened the way for applications such as high-efficiency photovoltaics, light emitting devices, and integrated photonics. More recently, halide perovskites have demonstrated huge potential in optoelectronic applications, showing exceptional photovoltaic properties , light emission, and lasing performance. Common growth techniques for these halide perovskites have been solution-based methods. Optimized solution-based processes yield high quality thin films well-suited for applications, such as single-junction solar cells, but remain incompatible with integration into complex devices such as monolithic tandem photovoltaics and photonic circuits. Therefore, new fabrication methods allowing atomic, structural, and compositional precision with the conformal growth of hybrid and multi-compound halide perovskite thin films are of utmost importance for material exploration and for their application in complex devices. This Perspective reviews the progress on synthesis methods of halide perovskite thin films, discusses pressing challenges, and proposes strategies for growth control, versatile film deposition, monolithic device integration, epitaxial growth, and high-throughput synthesis to discover novel and non-toxic stable metal halide compositions.
... Steps towards achieving a single-source deposition have sporadically been reported for laserbased techniques. This includes resonant infrared matrix assisted pulsed laser evaporation (RIR-MAPLE) [19,20] and pulsed-laser deposition (PLD) [21][22][23] of MAPbI3 and CsPbBr3, but high material quality remains yet to be demonstrated. An approach gaining popularity is the mechano-chemical synthesis of halide perovskite powders and subsequent thin film formation following single-source vapor deposition (SSVD) of those powders. ...
The presence of a non-optically active polymorph (yellow-phase) competing with the optically active polymorph (black $\gamma$-phase) at room temperature in CsSnI3 and the susceptibility of Sn to oxidation, represent two of the biggest obstacles for the exploitation of CsSnI3 in optoelectronic devices. Here room-temperature single-source in vacuum deposition of smooth black $\gamma$ - CsSnI3 thin films is reported. This has been done by fabricating a solid target by completely solvent-free mixing of CsI and SnI2 powders and isostatic pressing. By controlled laser ablation of the solid target on an arbitrary substrate at room temperature, the formation of CsSnI3 thin films with optimal optical properties is demonstrated. The films present a band gap of 1.32 eV, a sharp absorption edge and near-infrared photoluminescence emission. These properties and X-ray diffraction of the thin films confirmed the formation of the orthorhombic (B-$\gamma$) perovskite phase. The thermal stability of the phase was ensured by applying in situ an Al2O$_3$ capping layer. This work demonstrates the potential of pulsed laser deposition as a volatility-insensitive single-source growth technique of halide perovskites and represents a critical step forward in the development and future scalability of inorganic lead-free halide perovskites.
Perovskite nanocrystals hold significant promise for a wide range of applications, including solar cells, LEDs, photocatalysts, humidity and temperature sensors, memory devices, and low-cost photodetectors. Such technological potential stems from their exceptional quantum efficiency and charge carrier conduction capability. Nevertheless, the underlying mechanisms of photoexcitation, such as phase segregation, annealing, and ionic diffusion, remain insufficiently understood. In this context, we harnessed hyperspectral fluorescence microspectroscopy to advance our comprehension of fluorescence enhancement triggered by UV continuous-wave (cw) laser irradiation of CsPbBr3 colloidal nanocrystal thin films. Initially, we explored the kinetics of fluorescence enhancement and observed that its efficiency (φph) correlates with the laser power (P), following the relationship φph = 7.7⟨P⟩0.47±0.02. Subsequently, we estimated the local temperature induced by the laser, utilizing the finite-difference method framework, and calculated the activation energy (Ea) required for fluorescence enhancement to occur. Our findings revealed a very low activation energy, Ea ∼ 9 kJ/mol. Moreover, we mapped the fluorescence photoenhancement by spatial scanning and real-time static mode to determine its microscale length. Below a laser power of 60 μW, the photothermal diffusion length exhibited nearly constant values of approximately (22 ± 5) μm, while a significant increase was observed at higher laser power levels. These results were ascribed to the formation of nanocrystal superclusters within the film, which involves the interparticle spacing reduction, creating the so-called quantum dot solid configuration along with laser-induced annealing for higher laser powers.
