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(a) 3D schematic of the structure showing doped silicon triangular nanoprisms in red and silicon substrate and coating in blue, (b) cross-section of the structure showing a unit cell in the dashed boundary.
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Thermo-electric generation offers to be a solid candidate for both dealing with the temperature problems of photo-voltaic cells and increasing its total output power. However, it requires an efficient broadband absorber to harness the power found in the near and mid-infrared regions. In this work, we discuss a new structure of nanoprisms that are m...
Citations
... This method is limited to TM polarization and, to the best of our knowledge, may be difficult to fabricate. Abdelsalam and Swillam (2022) reported a parametric study on a structure of nano prisms that are made of doped silicon (D-Si) that acts as an ultra-broadband absorber in the near and mid-infrared regions. The study shows that the proposed absorber can achieve maximum absorbed power of 92.6% of the total incident power on the absorber between 1 and 15 μm. ...
Ultra-broadband metamaterial absorbers (UBMAs) that are compatible with CMOS technology for use in the mid-infrared and long-wave infrared regions are crucial for a variety of applications, including radiative cooling, thermal photovoltaic, and thermal imaging. In this regard, we propose, in this work, a design of an UBMA based on the heavily doped silicon (D-Si) and silicon carbide (SiC). The 3D finite-difference time-domain method is used, mainly, to numerically calculate the optical characteristics of the proposed UBMA. The absorber, which is made up of a periodic array of symmetrical multilayered square rings of D-Si and SiC, achieves high absorption with an average absorption of 95% over a wavelength range of 2.5–22 µm. This broad range of wavelength absorption is attained, encompassing the mid-, long-wave, and partial far-infrared regions. In addition to the materials' inherent absorption, the stimulation of magnetic polaritons, surface plasmon polaritons, localized surface plasmon resonance, and cavity resonance are responsible for the nearly perfect broadband absorption. Under normal incidence, the proposed UBMA is polarization-independent due to the symmetrical design of the absorber. Furthermore, the impact of the incidence angle on the absorption of transverse electric and transverse magnetic waves is examined.
... This method is limited to TM polarization and, to the best of our knowledge, may be difficult to fabricate. Abdelsalam and Swillam (2022) reported a parametric study on a structure of nano prisms that are made of doped silicon (D-Si) that acts as an ultra-broadband absorber in the near and mid-infrared regions. The study shows that the proposed absorber can achieve maximum absorbed power of 92.6% of the total incident power on the absorber between 1 and 15μm. ...
Ultra-broadband metamaterial absorbers (UBMA) that are compatible with CMOS technology for use in the mid-infrared (mid-IR) and long-wave infrared (LWIR) regions are crucial for a variety of applications, including radiative cooling, thermal photovoltaic, and thermal imaging. In this regard, we propose, in this work, a design of a UBMA based on the heavily doped silicon (D-Si) and silicon carbide (SiC). The 3D finite-difference time-domain method is used to numerically calculate the optical characteristics of the proposed UBMA. The absorber, which is made up of a periodic array of symmetrical multilayered square rings of D-Si and SiC, achieves high absorption with an average absorption of 95% over a wavelength range of 2.5 µm to 22 µm. This broad range of wavelength absorption is attained, encompassing the mid-, long-wave, and partial far-infrared regions. In addition to the materials' inherent absorption, the stimulation of magnetic polaritons, surface plasmon polaritons, localized surface plasmon resonance, and cavity resonance are responsible for the nearly perfect broadband absorption. The proposed UBMA is polarization-independent due to the symmetrical design of the absorber. Furthermore, the impact of the incidence angle on the absorption of transverse electric-polarized and transverse magnetic waves is examined.
... Although considerable interest was received from plasmonic research of metallic nanoprisms, 36-41 relevant investigation in the optical properties of dielectric nanoprisms is still in its infancy. 42,43 This study chose triangular nanoprisms as the geometric archetype, providing a simplified yet versatile platform for studying the optical response of dielectric nanoparticles. Through a theoretical exploration based on numerical solutions of Maxwell's equations, we aim to unravel the intricate interplay between light and matter in silicon triangular nanoprism structures and gain insights into their scattering characteristics. ...
Dielectric nanostructures exhibit intriguing optical properties and outstanding advantages in designing optical nanoantennas and metasurfaces compared to plasmonic nanostructures. This study employs classical electrodynamic methods to comprehensively explore the scattering characteristics of silicon triangular nanoprisms in monomer and oligomer forms. For monomeric nanoprisms, the scattering spectra reveal two distinct and prominent resonance peaks attributed to magnetic dipole (MD) and electric dipole (ED) modes. Reducing interparticle gaps within dimeric structures leads to noticeable blueshifts in MD resonance peaks with stable intensities, in contrast to the nearly constant position and significantly reduced intensities of the ED resonance peaks. A pronounced Fano-like resonance was observed upon transitioning to tetrameric and hexameric configurations, resulting from the coupling between MD and ED modes. A broad resonance peak also emerges in the long-wavelength region due to MD-to-MD coupling. The simulations conducted herein hold significant theoretical implications, advancing our comprehension of the scattering properties of dielectric nanoparticles and contributing valuable insights into fundamental nanophotonics.
... Photonics devices are becoming a significant aspect of future technology since it relates to the synthesis, manipulation, and detection of light related to practical applications where the polarity of the light is vital [1][2][3] . It's a major potential for designing and manufacturing devices, systems, and integrated circuits for applications in high-speed data transmission, enhancing sensing and imaging photonic technology promises orders of magnitude speed gains while consuming less power [4][5][6][7] . The optical performance of the photonics device is accessible by sweeping all the possible solutions where the higher order of the degree of freedom (DOF) requires a large simulation time, so the interest in satisfactory results and simulation time efficiency inverse design methodology employed, which depended mainly on the iterative optimization algorithms. ...
This work presents a high-efficiency achromatic meta-lens based on inverse design with topology optimization methodology. The meta-lens design with high numerical aperture values (NA = 0.7, NA = 0.8, and NA = 0.9) optimized along wavelength range starts from 550 to 800 nm, then the direct solver along the full extended wavelength band from 400 to 800 nm that applied to the final optimized structures under the three conditions of the high numerical apertures have high focusing efficiency for the all conditions. The optimization problem is based on Kreisselmeier–Steinhauser (k-s) objective function, leading to approximately stable response over the broadband bandwidths of the three designs.
... Multiple resonances enhance the wideband absorption of plasmonic fractal antennas compared to conventional antennas 11 www.nature.com/scientificreports/ configurations, including dendritic 18 , triangular 19,20 , and circular structures 21 , for achieving absorbance in the Terahertz, visible, and infrared regions. Due to their dependence on metals such as silver or gold, the majority of fractal plasmonics operate in the near-infrared or visible spectrum. ...
Perfect absorbers can be used in photodetectors, thermal imaging, microbolometers, and thermal photovoltaic solar energy conversions. The spectrum of Mid-infrared (MIR) wavelengths offers numerous advantages across a wide range of applications. In this work, we propose a fractal MIR broadband absorber which is composed of three layers: metal, dielectric, and metal (MDM), with the metal being considered as n-type doped silicon (D-Si) and the dielectric is silicon carbide (SiC). The architectural design was derived from the Sierpinski carpet fractal, and different building blocks were simulated to attain optimal absorption. The 3D finite element method (FEM) approach using COMSOL Multiphysics software is used to obtain numerical results. The suggested fractal absorber exhibits high absorption enhancement for MIR in the range between 3 and 9 µm. D-Si exhibits superior performance compared to metals in energy harvesting applications that utilize plasmonics at the mid-infrared range. Typically, semiconductors exhibit rougher surfaces than noble metals, resulting in lower scattering losses. Moreover, silicon presents various advantages, including compatibility with complementary metal–oxide–semiconductor (CMOS) and simple manufacturing through conventional silicon fabrication methods. In addition, the utilization of doped silicon material in the mid-IR region facilitates the development of microscale integrated plasmonic devices.
... Photonics devices are becoming a significant aspect of future technology since it relates to the synthesis, manipulation, and detection of light related to practical applications where the polarity of the light is vital [1]- [3]. It's a major potential for designing and manufacturing devices, systems, and integrated circuits for applications in high-speed data transmission, enhancing sensing and imaging photonic technology promises orders of magnitude speed gains while consuming less power [4]- [7]. The optical performance of the photonics device is accessible by sweeping all the possible solutions where the higher order of the degree of freedom (DOF) requires a large simulation time, so the interest in satisfactory results and simulation time efficiency inverse design methodology employed, which depended mainly on the iterative optimization algorithms. ...
This work presents a high-efficiency achromatic meta-lens based on inverse design with topology optimization methodology. The meta-lens design with high numerical aperture values (NA = 0.7, NA = 0.8, and NA = 0.9) along the visible band starts from 450 nm to 800 nm. The final optimized structures for the three conditions of the high numerical apertures have high focusing efficiency along the design band. The optimization problem is based on Kreisselmeier–Steinhauser (k-s) objective function, leading to approximately stable response over the broadband bandwidths of the three designs.
... Crystalline silicon has a low absorption coefficient [13], for light wavelengths in the nearinfrared region because it is an indirect bandgap material [14]. The absorption length 1/ increases from 10 m to around 3 mm in the wavelength range 800-1100 nm [15]. In this wavelength region, 36% of photons have energy greater than Si's bandgap [16]. ...
The study of blackbody radiation led to the development of quantum mechanics more than a century ago. A blackbody is an ideal absorber, as it absorbs all the electromagnetic radiation that illuminates it. No radiation is transmitted through it, and none is reflected. Now, "bodies" with high absorption qualities are crucial in numerous scientific and technological fields. Perfect absorbers can be used as photodetectors, thermal images, microbolometers, and thermal photovoltaic solar energy conversion. The spectrum of Mid-infrared (MIR) wavelengths offers numerous advantages for a wide range of applications. Among these applications is chemical and biological detection. In this study, we propose a fractal broadband silicon (Si) absorber. The proposed structure is composed of three layers: metal, dielectric, and metal (MDM), with the metal being n -type D-Si and the dielectric being Silicon Carbide (SiC). The structural composition displays a broad absorption profile across a broad spectrum of infrared wavelengths, ranging from 3 to 9 µm. The architectural design was derived from the Sierpinski carpet fractal, and different building locks were simulated to attain optimal absorption. Silicon that has been doped exhibits superior performance compared to metals in energy harvesting applications that utilize plasmonics at the mid-infrared range. Typically, semiconductors exhibit rough surfaces than noble metals, resulting in lower scattering losses. Moreover, silicon presents various advantages, including compatibility with complementary metal-oxide-semiconductor (CMOS) and simple manufacturing through conventional silicon fabrication methods. In addition, the utilization of doped silicon material in the mid-IR region facilitates the creation of microscale integrated plasmonic devices. This combination enables the production of numerous traditional plasmonic devices. The 2D finite element method (FEM) approach via COMSOL software is used to obtain the numerical results. The suggested fractal absorber exhibits high absorption enhancement in the Mid-IR range.
