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Significant effort has been devoted in this work to convert bare glass substrate with high transmittance, into reflective layers to know its suitability for modern applications. The glass substrate has been carefully chosen for its durability, high permeability, and ability to withstand any external stresses as a result of the accumulation of layer...
Citations
... This is influenced by the transmittance and reflectance pathways of the film. Overall, the emittance spectrum of a thin film is computed from the following formula [52]: ...
... As longer wavelengths are more readily absorbed by thin films, the emittance spectrum typically decreases with increasing wavelengths. This phenomenon is particularly pronounced in materials rich in interference effects, where interference enhances absorption at specific wavelengths [52]. Nevertheless, as the layer count of a thin film increases, interference effects become more complex. ...
This study employs radio frequency sputtering (RF) to fabricate a range of thin film structures on silica glass substrates. These structures encompass ZnO monolayers, (TiO 2 /ZnO and WO 3 /ZnO) bilayers, and (WO 3 /TiO 2 / ZnO) multilayers. Thorough investigations were conducted to analyze their structural evolution, surface morphology, and optical characteristics, affirming film crystallinity via X-ray diffraction. By Scherrer's formula, the crystallite size D is determined, the microstrain of films ε is extracted by the Williamson-Hall method, and then the dislocation density δ is computed. It is found that the crystallite size increases from 8.47 to 13.56 nm with increasing number of layers. FTIR spectra identified functional groups, while SEM provided cross-section views. The presence of a tungsten trioxide (WO 3) cap layer significantly influences optical properties, particularly in multilayers, impacting key parameters such as optical bandgap and tail energy. As the number of layers increases, the bandgap decreases from 3.45 to 2.47 eV, while the tail energy increases from 0.48 to 0.96 eV. The optical dispersion parameters of the fabricated layers, including the single oscillator energy E o (changing from 6.93 to 4.96 eV), dispersion energy E d (ranging from 32 to 48 eV), and static refractive index n o (varying from 2.36 to 3.26), are computed using the WWD (Wemple-Didomenico) model. As the number of layers rose, the sheet resistance (R sh) of the films increased, accompanied by a decrease in coverage density (D C). Elevated sheet resistance contributes to enhanced electrical resistivity, potentially benefiting resistive devices. Simultaneously, reduced coverage density can improve transparency and promote coating uniformity, offering advantages in optoelectronic and display technologies. The study also assessed inter-band transition strength and examined energy loss functions, revealing improved optical properties with additional layers. These findings highlight the system's promising potential as a cap layer in optoelectronic applications.
... Also, the band gap narrows as laser pulses are increased due to the quantum size effect and growing particle size. The recrystallization procedure induced by the laser treatment agglomerated the atoms on the film's surface and removed any flaws that were previously present in the film's material [57,58]. ...
This work studies the nanostructured nickel oxide (NiO) thin films exposed to laser treatment at 0, 50, 100, and 150 pulses. In order to determine the structural properties and morphology of the studied films, X-ray diffraction, and scanning electron microscope were used. According to XRD, the NiO cubic phase was the dominant crystalline phase. The average nanoparticles size was calculated using Williamson–Hall (W–H)'s method. Also, SEM micrographs have shown clear changes in the morphological structure where laser pulse-induced cracks and grain in the semispherical form were observed. A study of the optical characteristics of the NiO nanostructured films was conducted using transmittance and reflectance spectra between 200 and 2500 nm. Laser irradiation caused the energy band gaps Eg to shrink while the band tail energies EU to expand. In addition, the laser treatment has a clear effect on the optical constants (the refractive index, n, and the absorption index, kex). Furthermore, the sheet resistance Rs and the figure of merit, ɸ decreased significantly with increasing the laser treatment. Finally, the Verdet coefficient , dispersion parameters (single oscillator energy Eo, dispersion energy Ed and static refractive index no) and electronic energies of Plasmon , Penn , and Fermi were all computed.
... The result of this behavior, as observed in the literature [23][24][25], is a decrease in the transmittance spectra with increasing semiconductor content. Here it should be noted that the thin films with high transmittance can be exploited as window layers in solar cells and other optoelectronic applications [26][27][28]. Therefore, because the transmittance of the three studied layers is high in the visible range of the spectrum, it can be employed for the same purpose. ...
... Consequently, the homogeneity of samples is confirmed by this behavior. Single glass transition temperature indicates more stable samples than those with multiple transition temperatures [12,28]. ...
In the initial step of the current work's scenarios, the Al x Se 70 Te 30-x (x = 0, 15, and 30 wt.%Al) chalcogenide glasses were synthesized. The alloy-derived thin films with a thickness (~200 nm) were prepared. The optical spectra (transmittance T(λ) and reflectance R(λ)) were measured in the range of (300-2500 nm). Calculation of the optical parameters included determining the energy bandgap, E g and tail energy, E e. The results revealed a decrease in the bandgap energy of the direct transition and an increase in the tail energy with increasing Al-content. The X-ray dispersive analysis (EDX) detected the presence of the elemental components in the three studied systems. As well, by analyzing X-ray diffraction patterns (XRD) and s canning electron microscopy (SEM), the amorphous state of the films was confirmed. In addition, differential scanning calorimetry (DSC) at a heating rate of 5 K/min was used to determine the pre-crystallization and crystallization parameters. For the study of DC conductivity, the temperat ure dependence of sheet resistance was measured and its related parameters were extracted. While, the study of AC conductivity began by measuring the temperature dependence of capacitance and conductance at 5 kHz. Electrical conductivity has been studied in a temperature range of (300-500 K). It was found that there are two types of conduction pathways. The activation energies, Mott parameters, barrier potential energy, and density of localized states around the Fermi level were all evaluated using Mott's variable range hopping model as a benchmark. The dielectric constant, loss factor, complicated electrical modules, and impedance spectroscopy parameters were all shown to be substantially dependent on temperature and Al-content.
... The calculation of these two functions is useful in increasing the visibility of the optical characteristics of the studied samples and knowing the extent of energy loss, whether at the level of the surface or the volume of the samples under study and thus the studied samples are employed according to the targeted light use. These functions (in Fig. 12) are computed using the following relationships [51,52]: ...
The present study was concerned with the synthesis of thin films and nano samples from heavy oil fly ash (HOFA) doped-calcium carbonate (CaCO 3) with different contents (x = 0, 1, 2, 3, 4, and 5 wt%.). The motivation of this study was to benefit from fly ash resulting from heavy oil combustion in power plants in optoelectronic applications rather than as an environmental problem with repercussions including global warming, etc. The nano-and thin-film samples with a thickness of 200 nm were controlled and tuned by the monitor device and were prepared by the spin coating method on pre-clean glass substrates. The structural analysis was carried out using XRD and SEM techniques. Both techniques were proven on the crystallinity of the studied samples, and the structural parameters were calculated, such as grain size, which was affected by the increase in calcium car-bonate. Furthermore, SEM images of thin-film surfaces revealed a more packed structure with a lower number of pores in the thin film containing nano-CaCO 3. According to the optical spectra (transmittance T, reflectance, R), the optical absorption coefficient was calculated. Then, the related optical parameters (Tauc energy E g , Urbach energy E u), optical constants (an extinction coefficient k ex. , a reflective index n), and dispersion parameters (a single oscillator energy E o , a dispersion energy E d) were determined. It was clear that these layers have the great potential to be used as a window layer in solar cells and other optoelectronic applications due to the high energy range of the optical bandgap. In addition, all-optical properties were affected and improved by increasing the calcium carbonate content. This improvement in the optical properties along with the improvement of the structural properties makes the thin films and the nanoscaled samples very suitable for various applications.
... The calculation of these two functions is useful in increasing the visibility of the optical characteristics of the studied samples and knowing the extent of energy loss, whether at the level of the surface or the volume of the samples under study and thus the studied samples are employed according to the targeted light use. These functions (in Fig. 12) are computed using the following relationships [51,52]: ...
The present study was concerned with the synthesis of thin films and nano samples from heavy oil fly ash (HOFA) doped-calcium carbonate (CaCO3) with different contents (x = 0, 1, 2, 3, 4, and 5 wt%.). The motivation of this study was to benefit from fly ash resulting from heavy oil combustion in power plants in optoelectronic appli- cations rather than as an environmental problem with repercussions including global warming, etc. The nano- and thin-film samples with a thickness of 200 nm were controlled and tuned by the monitor device and were prepared by the spin coating method on pre-clean glass substrates. The structural analysis was carried out using XRD and SEM techniques. Both techniques were proven on the crystallinity of the studied samples, and the structural parameters were calculated, such as grain size, which was affected by the increase in calcium car- bonate. Furthermore, SEM images of thin-film surfaces revealed a more packed structure with a lower number of pores in the thin film containing nano-CaCO3. According to the optical spectra (transmittance T, reflectance, R), the optical absorption coefficient was calculated. Then, the related optical parameters (Tauc energy Eg, Urbach energy Eu), optical constants (an extinction coefficient kex., a reflective index n), and dispersion parameters (a single oscillator energy Eo, a dispersion energy Ed) were determined. It was clear that these layers have the great potential to be used as a window layer in solar cells and other optoelectronic applications due to the high energy range of the optical bandgap. In addition, all-optical properties were affected and improved by increasing the calcium carbonate content. This improvement in the optical properties along with the improvement of the structural properties makes the thin films and the nanoscaled samples very suitable for various applications.
... The calculation of these two functions is useful in increasing the visibility of the optical characteristics of the studied samples and knowing the extent of energy loss, whether at the level of the surface or the volume of the samples under study and thus the studied samples are employed according to the targeted light use. These functions (in Fig. 12) are computed using the following relationships [51,52]: ...
The present study was concerned with the synthesis of thin films and nano samples from heavy oil fly ash (HOFA) doped-calcium carbonate (CaCO 3) with different contents (x = 0, 1, 2, 3, 4, and 5 wt%.). The motivation of this study was to benefit from fly ash resulting from heavy oil combustion in power plants in optoelectronic applications rather than as an environmental problem with repercussions including global warming, etc. The nano-and thin-film samples with a thickness of 200 nm were controlled and tuned by the monitor device and were prepared by the spin coating method on pre-clean glass substrates. The structural analysis was carried out using XRD and SEM techniques. Both techniques were proven on the crystallinity of the studied samples, and the structural parameters were calculated, such as grain size, which was affected by the increase in calcium car-bonate. Furthermore, SEM images of thin-film surfaces revealed a more packed structure with a lower number of pores in the thin film containing nano-CaCO 3. According to the optical spectra (transmittance T, reflectance, R), the optical absorption coefficient was calculated. Then, the related optical parameters (Tauc energy E g , Urbach energy E u), optical constants (an extinction coefficient k ex. , a reflective index n), and dispersion parameters (a single oscillator energy E o , a dispersion energy E d) were determined. It was clear that these layers have the great potential to be used as a window layer in solar cells and other optoelectronic applications due to the high energy range of the optical bandgap. In addition, all-optical properties were affected and improved by increasing the calcium carbonate content. This improvement in the optical properties along with the improvement of the structural properties makes the thin films and the nanoscaled samples very suitable for various applications.
... This enhancement can be explained by the electronic transition from the holes of valence band to the conduction band [55]. One can take advantage of the wide energy bandgap of the thin layers in various applications including their use as window layers for solar cells and the other optoelectronic applications [56][57][58][59][60][61]. Raman spectroscopy analysis was conducted to identify the formation of Ni/NiO core/shell structure. ...
The current work describes a simple and uncomplicated chemical process for the production of Nickel tartrate (NiT), proceeded by powder calcination in an air atmosphere to generate the Ni/NiO core-shell nanostructure. The synthesis technique is quick, energy-efficient, and toxic-free, with the potential for large manufacturing. The results show that the method of mixing reactant species has a significant impact on the chemistry of the reaction, the morphology of the particles, and the production rate. Differential Scanning Calorimeter (DSC) analysis of NiT powder was shown that the tartrate molecules dissociate at a temperature of ~393 • C, leading to the formation of Ni/NiO core/shell structure, which was confirmed by diffraction techniques, electron microscopes, optical and magnetic measurements. This synthesis protocol can be further generalized to create different metal/metal oxide core/shell nanostructures. The magnetic, dielectric and optical properties of the synthesized NiT and Ni/NiO Powder samples were also investigated. The dielectric constant of NiT samples was observed high and low loss factor (tanδ) in comparison with Ni/NiO samples. Magnetic experiments revealed that NiT samples had para-magnetic fields, whereas Ni/NiO samples have improved ferromagnetic nature dependent on the thickness of the oxide shell. Surprisingly, NiT is a stable powder under many circumstances, allowing us to securely handle, store, and move it, whereas Ni/NiO may be created by the calcination process at the site of application.
... In the region where the extinction coefficient ends to zero, Sellmeier's model can be used to calculate a set of parameters called in order (the high-frequency dielectric constant ε ∞ , and the ratio of charge carrier concentration to the effective mass (N/m * ) and the plasma resonance frequency ω p ). These parameters are calculated from the following equations [71,72] (see Fig. 9(b)): ...
At room temperature, the Cd 30 Se 50 S 20 ternary thin films with thicknesses ranging from 100 to 400 nm were synthesized using a vacuum evaporation process in an adequate atmosphere of pure nitrogen. X-ray and scanning electron microscopy techniques were used to validate the amorphous nature of the investigated thin films. Changing the thickness of the pristine thin film had a significant effect on controlling the linear and nonlinear optical properties. The optical absorption coefficient was determined using the optical measurements (the transmittance, the reflectance spectra and the film's thickness) in the range of (300-2500 nm). The optical parameters were calculated in the linear path: the band tail energy and the optical bandgap energy determined in this work by several methods, including the first derivative of the transmittance, reflectance, and optical absorption coefficient curves as a function of wavelength, as well as the second derivative of the transmittance curves. The optical bandgap energy was also computed as a function of photon energy using Tauc formula, the relaxation time, and the portions of the optical conductivity curves. It turns out that the bandgap energy and the tail energy were affected by the increase in thickness so that the first decreases and the other increases in a harmonious behavior. The linear optical constants (the extinction coefficient, the refractive index), the linear dispersion parameters (the single oscillator energy, the dispersion energy), and the linear dielectric parameters were all affected by the increase in thickness of the thin layer. The phase velocity, the group velocity, and Kirchhoff functions were determined, as well as the linear optical dispersion coefficient. The Boling formula, on the other hand, was used to compute the nonlinear refractive index. Finally, the spectral distribution of molar parameters was discussed.
... Remarkably, it is necessary to determine the value of the energy at which the value of the first derivative of h Fig. 7(a)): A divergence in this formula is at [41]. The extracted value of the separation energy, E equals to 0.5 eV. ...
Because the previous works on Silver Selenide (AgSe) thin films were insufficient, incomplete, and lacking in-depth, the current study explores deeper into AgSe thin films. The current study is unique in that it examines the effect of annealing temperature on the structural, optical, and thermoelectrical properties of the thermally evaporated AgSe thin film, as well as the effect of temperature on the photovoltaic characteristics of the fabricated Ni/n-AgSe/p-CdTe/Pt solar cell in the range of (298–425 K). The pristine thin film was noncrystalline, while the rest of the annealed samples showed crystalline behavior, according to the results of the X-ray patterns (XRD) and the scanning electron microscope (SEM) examinations. Structural parameters for annealed samples were calculated. On the optical side, the number, and the type of dominant optical transitions were determined. It seemed evident that an allowed direct transition was the dominant one. The optical constants, the optical parameters, the dielectric constants, the energy loss functions, the optical and electrical conductivity were also calculated. On the electrothermal side, the results confirmed that the AgSe thin layer has n-type conductivity, while the CdTe thin layer has a p-type conductivity. The photovoltaic characteristics of the fabricated Ni/n-AgSe/p-CdTe/Pt solar cell were studied in the dark and illuminated conditions and at bias voltages in the range of (-3 to 3 volt). The highest power conversion efficiency (PCE) was for the annealed AgSe layer at 425 K. Based on this, we can confirm that the thin film annealed at 425 K is the best layer in the fabricated solar cells.
... Where, E o and E d portrays these energies at the optical transition is from s and/or p to d levels in This, in turn, is due to as the temperture of the studied system increases, this leads to increase the transmittance spectrum and then a decrease in scattering centers, resulting in the creation of localized states in the valence and conduction interbands' gap region. As a result, the increase of temperature produces a levels which are closer to the valence band, and then these parameters are reduced [27,28]. As well, the static refractive index decreases as the temperature increases. ...
The fabrication of Zn0.5Cd0.5Te thin film was reported in this study which was prepared via the common vacuum evaporation process at various temperatures (25, 100, 200, 300, 400 and 500 °C). On pre-cleaned glass substrates, the Zn0.5Cd0.5Te thin films were formed. The absorption coefficient was used to analyze the linear optical path in this study. The optical parameters, the optical constants, the dielectric constants, the quality factor of the studied thin films and the dispersion parameters were computed. The envelope approach, proposed by Swanepoel, was used to calculate the refractive indices and the thickness of the studied films in the transparent region. The optical energy gap was computed in the transmittance and reflectance spectrum's strong absorption zone. As the temperature of the examined system is increased, the refractive index, n, decreases while the energy gap rises. The annealed thin films have a crystalline structure with cubic phase and primarily oriented along the (111) plane, according to x-ray diffraction results. The crystalline structure of the examined thin films was confirmed by the top view of SEM profiles for the Zn0.5Cd0.5Te thin film at various temperatures. In the other part of this work, the photovoltaic characteristics of the fabricated n-Zn0.5Cd0.5Te/p-CdTe solar cell were investigated for a solar cell which fabricated by depositing a p-CdTe thin layer (200 nm) on the ZnCdTe thin films (∼1000 nm) prepared on the glass substrates (2 mm). The Ni/n-Zn0.5Cd0.5Te/p-CdTe/Pt heterojunction has been effectively assembled. The front and back contact electrodes were made of two high-work-function metals (Pt and Ni) so that surface electrons may travel freely and be easily removed from the surface by the influence of the lowest energy falling on the solar cell. The dark (current-voltage) characteristics of fabricated heterojunctions have been reported at different temperatures ranging from 25 to 500 °C, as well as for voltages ranging from −2 to 2 V. Based on the dependence of the forward and reverse current on the voltage, the effective and main parameters connected to the fabricated diode have been determined. The rectification ratio, the junction resistance, an ideality factor of the fabricated diode, the shunt and series resistances, the height of the barrier formed at the interface between the Zn–Cd–Te thin films and the p-CdTe thin layer, the carrier recombination, the activation energy in the exhausted region, Poole-Frenkel, and Schottky coefficients were all evaluated.
