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Dependence of a) threshold gain for the fundamental transverse LP01-E⊥ mode and b) transverse and polarization mode discrimination (threshold gain differences) on grating fill-factor. The grating pitch and depth is 120 and 59 nm, respectively, and the oxide aperture and mode filter diameters are 5 and 3 µm, respectively.

Dependence of a) threshold gain for the fundamental transverse LP01-E⊥ mode and b) transverse and polarization mode discrimination (threshold gain differences) on grating fill-factor. The grating pitch and depth is 120 and 59 nm, respectively, and the oxide aperture and mode filter diameters are 5 and 3 µm, respectively.

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We demonstrate a 6.5 mW single transverse and polarization mode GaAs-based oxide-confined VCSEL at 850 nm. High power is enabled by a relatively large oxide aperture and an epitaxial design for low resistance, low optical loss, and high slope efficiency VCSELs. With the oxide aperture supporting multiple polarization unrestrained transverse modes,...

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