Fig 1 - uploaded by Christian Eisele
Content may be subject to copyright.
Wavelength coverage of laser diodes of different types and materials. QD: quantum dot lasers, QW: quantum well lasers.
Source publication
We demonstrate a diode laser system which is suitable for high-resolution spectroscopy in the 1.2μm and yellow spectral ranges.
It is based on a two-facet quantum dot chip in a Littrow-type external cavity configuration. The laser is tunable in the range
1125–1280nm, with an output power of more than 200mW, and exhibits a free-running line width of...
Similar publications
We demonstrate high-resolution spectroscopy of molecular iodine using the second-harmonic generation of a 1063 nm planar-waveguide external cavity diode laser. The hyperfine components of the $R({38}){32 - 0}$ R ( 38 ) 32 − 0 transition are observed with a signal-to-noise ratio of approximately 180 over a bandwidth of 1 kHz. The diode laser is freq...
We report on the comparative performance of intracavity frequency-doubled continuous-wave (cw) single-frequency Nd:YLiF4 ring oscillators lasing on the ~1.3 µm 4F3/2–4I13/2 transition using either periodically poled KTiOPO4 (ppKTP) or birefringent-phase-matched BiB3O6 (BiBO) and LiB3O5 (LBO) nonlinear crystals. Using a single-end diode pumping sche...
The saturated absorption technique is an elegant method widely used in atomic and molecular physics
for high-resolution spectroscopy, laser frequency standards and metrology purposes.Wehave
recently discovered that a saturated absorption scheme with a dual-frequency laser can lead to a
significant sign reversal of the usual Doppler-free dip, yieldi...
Presented is the powerful technique of frequency modulation spectroscopy (FM Spectroscopy) in theory and experiment for probing extremely weak absorption features. Applications of this technique include trace gas detection, high-resolution spectroscopy of crystal structures, and laser frequency stabilization. For this experiment laser light was mod...
Frequency fluctuations of an inexpensive single-mode semiconductor diode laser, which operates in the 822 nm region, are investigated by direct measurement of the error signal. The linear slope of first derivative signal of a transition in the (2,1,1) vibration-rotation band of water vapour is used as a frequency discriminator. A balanced photodete...
Citations
... Quantum dot (QD) lasers [1][2][3] have been extensively investigated for low-power consumption applications, due to their unique properties, such as low threshold current [4][5][6], high-temperature stability [4,7] and small linewidth enhancement factor [4,8]. In addition, the dislocation insensitive properties of QD lasers enable the potential capability of integrating them on silicon substrates, which can provide cost-effective manufacturing and high-density integration [9]. ...
For optical interconnect applications, multi-wavelength comb sources require uniform comb spacings and high reliability at high operating temperature. Here, the high-temperature reliability measurements of a InAs quantum dot colliding pulse mode-locked (QD-CPML) laser with 100 GHz comb spacing are systematically investigated. Laser lifetime measurements are performed for over 1600 hours at 80 °C under constant stress current of 150 mA. The mean time to failure (MTTF) of the laser is approximately 38 years (336,203 hours), extracted from the threshold currents extrapolation method. The optical spectral revolutions are also monitored during the aging process, while the grids of comb laser are remarkably stable. The outstanding reliability and spectrum stability make this 100 GHz QD-CPML a promising candidate as a multi-wavelength laser source for datacom and optical I/O applications.
... In order to reach a narrower linewidth, external control schemes such as optical feedback or optical injection are considered as effective methods. By using an external cavity configuration, the spectral linewidth of the QD laser can be reduced to less than 100 kHz [28][29][30]. However, the precise control of feedback strength is required to make the laser operating in the narrow linewidth area, otherwise the optical feedback will lead to laser instability [31]. ...
This work theoretically investigates the relative intensity noise (RIN) and spectral linewidth characteristics of epitaxial quantum dot (QD) lasers on silicon subject to optical injection. The results show that the RIN of QD lasers can be reduced by optical injection, hence a reduction of 10 dB is achieved which leads to a RIN as low as −167.5 dB/Hz in the stable injection-locked area. Furthermore, the spectral linewidth of the QD laser can be greatly improved through the optical injection locked scheme. It is reduced from 556.5 kHz to 9 kHz with injection ratio of −60 dB and can be further reduced down to 1.5 Hz with injection ratio of 0 dB. This work provides an effective method for designing low intensity noise and ultra-narrow linewidth QD laser sources for photonics integrated circuits on silicon.
... In order to reach a narrower linewidth, external control schemes such as optical feedback or optical injection are considered as effective methods. By using an external cavity configuration, the spectral linewidth of the QD laser can be reduced to less than 100 kHz [28][29][30]. However, the precise control of feedback strength is required to make the laser operating in the narrow linewidth area, otherwise the optical feedback will lead to laser instability [31]. ...
... A lot of recent research has focused on ECLs for further improvements in their tuning range, linewidth, and output power [1][2][3]. High output power and narrow linewidth lasers are required in multiple applications, such as long-haul optical communication [4][5][6], light detection and ranging (LiDAR) [7,8]. In both systems, coherent detection is regarded as a viable solution to improve the detection sensitivity and extend the transmission or detection range. ...
We present a hybrid dual-gain integrated external cavity laser with full C-band wavelength tunability. Two parallel reflective semiconductor optical amplifier gain channels are combined by a Y-branch in the Si3N4 photonic circuit to increase the optical gain. A Vernier ring filter is integrated in the Si3N4 photonic circuit to select a single longitudinal mode and meanwhile reduce the laser linewidth. The side-mode suppression ratio is ∼67 dB with a pump current of 75 mA. The linewidth of the unpackaged laser is 6.6 kHz under on-chip output power of 23.5 mW. The dual-gain operation of the laser gives higher output power and narrower linewidth compared to the single gain operation. It is promising for applications in optical communications and light detection and ranging systems.
... 8,9 All these aforementioned properties suggest that a similarly improved performance can be expected with EC QD lasers in terms of operation temperature, output power, noise properties, and tunability. 10,11 In the context of EC, many types of configurations have been proposed. First, probably the simplest one, consists of an EC semiconductor laser diode with a feedback strength of up to 1%. ...
External cavity lasers show a variety of uses, for which quantum well semiconductor lasers are already com- mercially used. Due to the atom-like discrete energy levels, quantum dots exhibit various properties resulting from the three-dimensional confinement of carriers, like high stability against temperature variation, large gain bandwidth, and low-threshold lasing operation. Quantum dots seem to be ideal to address the challenges in the further development of various semiconductor applications, such as high-resolution spectroscopy or broad- band optical communication networks, for which a range of spectral and temporal characteristics is required, for instance a narrow spectral linewidth, low intensity noise or wide wavelength tunability. In this view, exter- nal cavity quantum dot gain chips can be envisoned to replace the current quantum well technology. Using a semi-analytical rate equation model, we successfully analyze both dynamical and noise properties of an external cavity laser made with quantum dot gain medium, operating under strong optical feedback. This paper inves- tigates the turn-on delay, the relative intensity noise, and the frequency noise and compares them to the case without optical feedback. These numerical investigations of an external cavity quantum dot gain chip provide meaningful building blocks for future fabrication research or for developing high performance device such as wavelength-selective components.
... The methods to achieve solid state yellow laser include second harmonic generation (SHG), 1 sum frequency generation (SFG), 2 frequency-doubling Raman laser, 3 and laser diode (LD) pumped Dy 3+ doped solid state materials, 4,5 etc.Especially for laser at 578 nm, it is considered to be not only the best choice in laser photocoagulation for treating numerous macular and retinal vascular diseases, 6 but also the perfect radiation of the clock transition ( 1 S 0 -3 P 0 ) applied in the newly-developed optical clocks based on Yb atoms. 7 Currently, the main ways to obtain lasers around 578 nm are nonlinear frequency transformation 8,9 and laser operation on Dy 3+ doped materials pumped by blue LDs. 10 However, nonlinear frequency transformation is usually plagued by its complex system and high cost, resulting in slow progress in the past. Owing to the advantages of LD-pumped Dy 3+ doped materials, such as simplified laser system and low cost, more attention is now attracted by Dy 3+ doped materials. ...
Single crystals of Dy:GdScO3 and Dy,Tb:GdScO3 have been successfully grown by the Czochralski method. A high crystalline quality of both crystals is determined with X-ray rocking curves. Effective segregation coefficients of Dy3+ and Tb3+ ions in GdScO3 host are obtained to be ~0.7 and 1.03, respectively. The large FWHMs and absorption cross sections at 452 nm of Dy:GdScO3 and Dy,Tb:GdScO3 crystals indicate that they can be efficiently pumped by the commercial blue GaN laser diodes. Both Dy:GdScO3 and Dy,Tb:GdScO3 exhibit relatively large stimulated emission cross sections at 578 nm and relatively long fluorescence lifetimes, especially Dy,Tb:GdScO3 shows an enhanced yellow emission around 578 nm. The energy transfer between Dy3+ and Tb3+ ions is beneficial for realizing the population inversion by depopulating the population of the lower laser level of Dy3+ and has little influence on the upper laser level. Additionally, the defects and thermal properties of Dy:GdScO3 are investigated since they are very important for crystal growth and laser applications. All these results suggest that Dy:GdScO3 and Dy,Tb:GdScO3 can be regarded as promising candidates for realizing 578 nm laser output.
... The main requirements for the two clocks are: performance, compact size and moderate mass, robustness and low power consumption. To match these requirements, novel solutions have been used for the implementation of the clocks, such modular laser systems, containing compact and transportable laser sources 6,15,16 , use of a low-power oven as atomic source 17 , a permanent-magnet Zeeman slower 18 , a compact and lightweight vacuum chamber 6 , a robust laser frequency stabilization system 19 and a robust clock laser reference cavity 6 . ...
The ESA mission “Space Optical Clock” project aims at operating an optical lattice clock on the ISS in approximately 2023. The scientific goals of the mission are to perform tests of fundamental physics, to enable space-assisted relativistic geodesy and to intercompare optical clocks on the ground using microwave and optical links. The performance goal of the space clock is less than 1 × 10-17 uncertainty and 1 × 10-15 τ-1/2 instability. Within an EU-FP7-funded project, a strontium optical lattice clock demonstrator has been developed. Goal performances are instability below 1 × 10-15 τ-1/2 and fractional inaccuracy 5 × 10⁻¹⁷. For the design of the clock, techniques and approaches suitable for later space application are used, such as modular design, diode lasers, low power consumption subunits, and compact dimensions. The Sr clock apparatus is fully operational, and the clock transition in ⁸⁸Sr was observed with linewidth as small as 9 Hz.
... [5][6][7] It is also expected that QD optical gain materials will enable high-temperature device stability and patterneffect-free data signal amplification, and so on. [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22] On the other hand, Gbps-order high-speed optical modulators are critical photonic devices for optical data and high-frequency optical signal generation and distribution. In particular, inexpensive and compact Gbps-order high-speed optical modulators are expected to be used in RoF systems and as a link between short-and middle-range communications. ...
A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed with T-band (1.0 µm waveband) and O-band (1.3 µm waveband) QD optical gain materials for Gbps-order, high-speed optical data generation. The insertion loss due to coupling between the device and the optical fiber was effectively compensated for by the SOA section. It was also confirmed that the monolithic QD-OGM/SOA device enabled >4.8 Gbps optical data generation with a clear eye opening in the T-band. Furthermore, we successfully demonstrated error-free 4.8 Gbps optical data transmissions in each of the six wavelength channels over a 10-km-long photonic crystal fiber using the monolithic QD-OGM/SOA device in multiple O-band wavelength channels, which were generated by the single QD gain chip. These results suggest that the monolithic QD-OGM/SOA device will be advantageous in ultra-broadband optical frequency systems that utilize the T+O-band for short- and medium-range optical communications.
... As an alternative, we previously developed a 578 nm light source for an Yb optical lattice clock using the sum frequency generation (SFG) of a 1319 nm Nd:YAG laser and a 1030 nm Yb:YAG laser [14,25]. Another way to generate a 578 nm light is to employ the second-harmonic generation (SHG) of a diode laser at 1156 nm [26][27][28]. The linewidth of a diode laser, e.g., an external-cavity diode laser (ECDL), is usually several hundred kilohertz, whereas that of the above SFG light source is several kilohertz [14,25]. ...
We report absolute frequency measurements of 81 hyperfine components of the rovibrational transitions of molecular iodine at 578 nm using the second harmonic generation of an 1156 nm external-cavity diode laser and a fiber-based optical frequency comb. The relative uncertainties of the measured absolute frequencies are typically 1.4 × 10 − 11 . Accurate hyperfine constants of four rovibrational transitions are obtained by fitting the measured hyperfine splittings to a four-term effective Hamiltonian, including the electric quadrupole, spin-rotation, tensor spin-spin, and scalar spin-spin interactions. The observed transitions can be good frequency references at 578 nm and are especially useful for research using atomic ytterbium because the transitions are close to the S 0 1 − P 0 3 clock transition of ytterbium.
... The main requirements for the two clocks are: performance, compact size and moderate mass, robustness and low power consumption. To match these requirements, novel solutions have been used for the implementation of the clocks, such modular laser systems, containing compact and transportable laser sources 6,15,16 , use of a low-power oven as atomic source 17 , a permanent-magnet Zeeman slower 18 , a compact and lightweight vacuum chamber 6 , a robust laser frequency stabilization system 19 and a robust clock laser reference cavity 6 . ...
The ESA mission "Space Optical Clock" project aims at operating an optical lattice clock on the ISS in approximately 2023. The scientific goals of the mission are to perform tests of fundamental physics, to enable space-assisted relativistic geodesy and to intercompare optical clocks on the ground using microwave and optical links. The performance goal of the space clock is less than $1 \times 10^{-17}$ uncertainty and $1 \times 10^{-15} {\tau}^{-1/2}$ instability. Within an EU-FP7-funded project, a strontium optical lattice clock demonstrator has been developed. Goal performances are instability below $1 \times 10^{-15} {\tau}^{-1/2}$ and fractional inaccuracy $5 \times 10^{-17}$. For the design of the clock, techniques and approaches suitable for later space application are used, such as modular design, diode lasers, low power consumption subunits, and compact dimensions. The Sr clock apparatus is fully operational, and the clock transition in $^{88}$Sr was observed with linewidth as small as 9 Hz.
