Fig 4 - uploaded by Pung Keun Song
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WVTR of the PET bare substrate, GZO(300 nm) and ZTO(50 nm)/GZO(250 nm) double layer deposited on PET substrate at RT.
Source publication
ZTO/GZO double layered films were prepared on unheated non-alkali glass substrates. ZTO films were deposited by RF/DC hybrid magnetron co-sputtering using ZnO (RF) target and (DC) targets, and then GZO films were deposited by DC magnetron sputtering using an GZO (:5.57 wt%) target. These films were post-annealed at temperature of 200, in air and va...
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Transparent conducting oxides (TCOs) are integral part of modern optoelectronics, among them: the ZnO doped aluminium (AZO). In this work, thin film of AZO was deposited on corning glass substrate using a magnetron sputtering method. The main study of optical and electric properties is made while employing the spectroscopic ellipsometry, because it...
Citations
... Zinc oxide (ZnO) thin films with n-type conductivity and high transparency have been employed in numerous solar devices (Ma et al., 2007;Minami et al., 2007;Naik et al., 2011;Nomoto et al., 2010;Oh et al., 2012;Untila et al., 2015;Vismara et al., 2019). In this study, gallium-doped zinc oxide (GZO) layer was used as TCO film for low-cost Cu 2 O/CH 3 NH 3 PbI 3 /SiO 2 structure to improve the heterojunction planar PSCs. ...
Perovskite solar cells (PSCs) have been made eligible for proficient power conversion efficiency (PCE) by optimizing the perovskite film’s morphology, formation, interfaces, and charge collection for increased effectiveness. This paper applied a new method for Cu2O/methylammonium lead iodide (MAPbI3)/SiO2 structure with heterojunction PSCs. This paper developed a novel synthesis engineering method for thin Cu2O hole-transporting material layer (HTML) and ultrathin SiO2 electron-transporting material layer (ETML). Cu2O HTML and SiO2 ETML could improve the PCE and carrier charge for recombination and recollection. The architecture includes a reduced film thickness by hetero-contact synthesis engineering, which resulted in an impactful enhancement of open-circuit voltage (Voc). The stable Voc effect was induced by constructing the interfilm of Cu2O and SiO2 between the main CH3NH3PbI3 layers, which transported electrons/electron holes, resulting in an excellent PCE of 18.4%. The fabrication showed that inorganic materials can be applied for the potential interfacial engineering of perovskite-based solar cells.
