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Voltage gain of the WCDMA front-end receiver, simulation versus measurement at down-conversion mixer's (IF) output.
Source publication
To go further into integration and to understand parasitic coupling mechanisms in RF integrated circuits, this article describes an RF front-end direct conversion receiver co-integrated with a differential power amplifier (PA). It uses dedicated filtering functions based on bulk acoustic wave (BAW) technology. This circuit performs a prototype of c...
Context in source publication
Context 1
... receiver simulated and measured frequency response at mixer's intermediate frequency (IF) output is presented in Fig 2. As figured, inband ripple is more important than expected (+/-1 dB); it is due to impedance mismatches between RF blocks. Nevertheless, we observe good correlation between measured results and circuit simulation with parasitics extraction. ...
Citations
... Acoustic waves, using surface or bulk propagation, are used in numerous applications in frequency generation, control, or filtering in modern wireless communication systems [1][2][3]. With the growing demand for multimedia and mobile applications, new generations of telecommunication satellites require higher performances, higher functionalities, and still stronger cost and size constraints [4,5]. In that context, bulk acoustic waves (BAWs) or film bulk acoustic resonator (FBAR) devices can offer many potentialities for smart RF components or systems. ...
Filters based on film bulk acoustic resonators (FBARs) are widely used for mobile phone applications, but they can also address wideband aerospace requirements. These devices need high electromechanical coupling coefficients to achieve large band pass filters. The piezoelectric material LiNbO
3
complies with such specifications and is compatible with standard fabrication processes. In this work, simple metal—LiNbO
3
—metal structures have been developed to fabricate single FBAR elements directly connected to each other on a single chip. A fabrication process based on LiNbO
3
/silicon Au-Au bonding and LiNbO
3
lapping/polishing has been developed and is proposed in this paper. Electrical measurements of these FBAR filters are proposed and commented exhibiting filters with 8% of fractional bandwidth and 3.3 dB of insertion losses. Electrical measurements show possibilities to obtain 14% of fractional bandwidth. These devices have been packaged, allowing for power handling, thermal, and ferroelectric tests, corresponding to spatial conditions.
... From this standpoint, the film bulk acoustic wave resonator (FBAR) devices and their process technologies are most likely to be a very promising candidate to resolve the above issue, mainly due to the high compatibility of the materials, device structures, and fabrication processing with the current CMOS technology. Thus, the FBAR device technology has a strong potential for more extensive application of the RF/IF filters, duplexers and voltage-controlled oscillators [2]- [4]. ...
In this letter, a new two-step annealing technique is presented that can more effectively improve the resonance charac- teristics of the film bulk acoustic wave resonator (FBAR) devices in terms of return loss, -factor, and effective electromechanical coupling coefficient ( ). In the case of the SMR-type FBAR de- vices, the use of this approach has considerably improved the res- onance performance ( of -factor value, of ) at the operating frequency of , as compared to the con- ventional annealing techniques.
... Acoustic waves, using surface or bulk propagation, are used in numerous applications in frequency generation, control or filtering in modern wireless communication systems [1] [2]. With the growing demand for multimedia and mobile applications, new generations of telecommunication satellites require higher performances, higher functionalities and still stronger cost and size constraints [3] [4]. In that context, Bulk Acoustic Waves (BAW) devices can offer many potentialities for smart RF components or systems. ...
A resonator using shear waves of lithium niobate is used in this paper to achieve large fractional bandwidth BAW filter. Electromechanical couplings in the 20 – 50 % range are obtained for the shear waves of a thin layer of Lithium Niobate suspended on a silicon substrate. By this way a filter with fractional bandwidth over 20% has been designed for space applications.
... Acoustic waves, using surface or bulk propagation, are used in numerous applications in frequency generation, control, or filtering in modern wireless communication systems [1– 3]. With the growing demand for multimedia and mobile applications, new generations of telecommunication satellites require higher performances, higher functionalities, and still stronger cost and size constraints [4] [5]. In that context, bulk acoustic waves (BAWs) or film bulk acoustic resonator (FBAR) devices can offer many potentialities for smart RF components or systems. ...
Filters based on film bulk acoustic resonators (FBARs) are widely used for mobile phone applications, but they can also address wideband aerospace requirements. These devices need high electromechanical coupling coefficients to achieve large band pass filters. The piezoelectric material LiNbO 3 complies with such specifications and is compatible with standard fabrication processes. In this work, simple metal—LiNbO 3 —metal structures have been developed to fabricate single FBAR elements directly connected to each other on a single chip. A fabrication process based on LiNbO 3 /silicon Au-Au bonding and LiNbO 3 lapping/polishing has been developed and is proposed in this paper. Electrical measurements of these FBAR filters are proposed and commented exhibiting filters with 8% of fractional bandwidth and 3.3 dB of insertion losses. Electrical measurements show possibilities to obtain 14% of fractional bandwidth. These devices have been packaged, allowing for power handling, thermal, and ferroelectric tests, corresponding to spatial conditions.
A resonator using shear waves of lithium niobate is used in this paper to achieve large fractional bandwidth BAW filter. Electromechanical couplings in the 20 - 50 % range are obtained for the shear waves of a thin layer of Lithium Niobate suspended on a silicon substrate. By this way a filter with fractional bandwidth over 20% has been designed for space applications.
