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Voltage-controlled perpendicular magnetic anisotropy
a Schematic illustration of the mechanism of the voltage-driven frequency tuning via voltage-controlled magnetic anisotropy (VCMA). The green and gray arrows represent the directions of spin-orbit torque and damping torque, respectively. b The resonance frequency (fres\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${f}_{{{{{{\rm{res}}}}}}}$$\end{document}) as a function of in-plane magnetic field (B∣∣\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${B}_{{{{{{\rm{| }}}}}}{{{{{\rm{| }}}}}}}$$\end{document}) for high PMA (blue) and low PMA (red). c Magnetization (M\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$M$$\end{document}) versus out-of-plane magnetic field (Bz\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${B}_{z}$$\end{document}) of the Co/Ni film. d Anomalous Hall resistance (RH\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${R}_{{{{{{\rm{H}}}}}}}$$\end{document}) curves of the Co/Ni sample for sequentially applied gate voltages of +3 V, +5 V, −3 V, and −5 V, respectively.

Voltage-controlled perpendicular magnetic anisotropy a Schematic illustration of the mechanism of the voltage-driven frequency tuning via voltage-controlled magnetic anisotropy (VCMA). The green and gray arrows represent the directions of spin-orbit torque and damping torque, respectively. b The resonance frequency (fres\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${f}_{{{{{{\rm{res}}}}}}}$$\end{document}) as a function of in-plane magnetic field (B∣∣\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${B}_{{{{{{\rm{| }}}}}}{{{{{\rm{| }}}}}}}$$\end{document}) for high PMA (blue) and low PMA (red). c Magnetization (M\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$M$$\end{document}) versus out-of-plane magnetic field (Bz\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${B}_{z}$$\end{document}) of the Co/Ni film. d Anomalous Hall resistance (RH\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${R}_{{{{{{\rm{H}}}}}}}$$\end{document}) curves of the Co/Ni sample for sequentially applied gate voltages of +3 V, +5 V, −3 V, and −5 V, respectively.

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Spin Hall nano-oscillators (SHNOs) exploiting current-driven magnetization auto-oscillation have recently received much attention because of their potential for neuromorphic computing. Widespread applications of neuromorphic devices with SHNOs require an energy-efficient method of tuning oscillation frequency over broad ranges and storing trained f...

Citations

... The nano-scale dimensions of SHNOs facilitate high-frequency operations and allow for significant miniaturization of the devices [60,61]. SHNOs are characterized by their wide frequency tunability [27,43,62], nanoscale size [61,63], and strong non-linear behavior, which are highly desirable for unconventional computing applications due to their easily accessible free ferromagnetic layer [64]. ...
... Oscillator arrays, on the other hand, rely on mutual synchronization and SHIL for the construction of the artificial spin state; with couplings being mediated by dipolar fields, propagating exchange waves or electrical current. Control over these couplings in STNOs and SHNOs include thermal excitation [33,47], voltage controlled magnetic anisotropy [42][43][44]62,129] and STT using memristive gates [130][131][132]. Although very enticing, spintronic oscillator-based IMs have only been reported based on small array measurements [71] and network simulations [133,134], with control over their individual couplings and biases remaining an engineering challenge yet to be resolved. ...
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... Oscillator arrays, on the other hand, rely on mutual synchronization and SHIL for the construction of the artificial spin state; with couplings being mediated by dipolar fields, propagating exchange waves or electrical current. Control over these couplings in STNOs and SHNOs include thermal excitation [47,33], voltage controlled magnetic anisotropy [42,43,44,121,60] and STT using memristive gates [122,123,124]. Although very enticing, spintronic oscillator-based IM have only been reported based on small array measurements [68] and network simulations [125,126], with control over their individual couplings and biases remain an engineering challenge yet to be resolved. ...
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... However, future efficient integrated systems will use amorphous magnetic materials where the dynamics is not dominated by pinning, as demonstrated in Ref. 36. Furthermore, non-volatile resonance frequency tuning through magnetic anisotropy, as demonstrated in Ref. 37. ...
... To reduce pinning effect, we can, for instance, use amorphous materials as proposed in Ref. 36. To achieve need non-volatile weights, we need novel resonance frequency tuning, for instance, as proposed in Ref. 37. Second, we need to have MTJs functioning at wide ranges of frequencies. ...
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... Novel effects such as voltage-controlled magnetic anisotropy can be used to increase spin-charge conversion and thus energy efficiency. Non-volatile tuning of the synaptic weights can be achieved by a similar mechanism through modification of the resonance frequencies 12,25,47 . Alternatively, binary non-volatile synapses exploiting vortex states have been demonstrated 48 . ...
... Higher frequencies are critical for both energy consumption and processing speed. While spintronic oscillators reliably exhibit frequencies in the 10 GHz range 47,57 , there are prospects for reaching several tens of gigahertz 58,59 or even terahertz 60,61 . ...
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... 34 The mutual synchronization of these oscillators in a chain can be explored for bioinspired computing and beyond 9,23,35 where each oscillator behaves as a neuron. Combined with voltage 26,27,36 and/or memristive 25 control of synchronization (synaptic weights), these large chains can be used to locally or globally control the coupling between oscillators (neurons). The present work also serves as a stepping stone in the direction toward further scaling mutual synchronization to much larger square or rectangular arrays well beyond the previously demonstrated 64 oscillators. ...
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... Previous works in the conventional spintronics field have proved that voltage-controlled magnetic anisotropy is a highly energy-efficient approach to control magnetization [30], e.g., magnetization reversal and procession, compared to the current-based approach. In addition, the in-plane configuration of SHNOs can easy to achieve both current-and voltage-based collaborative control of nonlinear dynamics in three-terminal SHNOs [31][32][33]. ...
Preprint
Full-text available
We experimentally study the dynamical modes excited by current-induced spin-orbit torque and its electrostatic gating effect in a 3-terminal planar nano-gap spin Hall nano-oscillator (SHNO) with a moderate interfacial perpendicular magnetic anisotropy (IPMA). Both quasilinear propagating spin-wave and localized "bullet" modes are achieved and controlled by varying the applied in-plane magnetic field and driving current. The minimum linewidth shows a linear dependence on the actual temperature of the active area, confirming single-mode dynamics based on the nonlinear theory of spin-torque nano-oscillation with a single mode. The observed electrostatic gating tuning oscillation frequency arises from voltage-controlled magnetic anisotropy and threshold current of SHNO via modification of the nonlinear damping and/or the interfacial spin-orbit coupling of the magnetic multilayer. In contrast to previously observed two-mode coexistence degrading the spectral purity in Py/Pt-based SHNOs with a negligible IPMA, a single coherent spin-wave mode with a low driven current can be achieved by selecting the ferromagnet layer with a suitable IPMA because the nonlinear mode coupling can be diminished by bringing in the PMA field to compensate the easy-plane shape anisotropy. Moreover, the simulations demonstrate that the experimentally observed current and gate-voltage modulation of auto-oscillation modes are also closely associated with the nonlinear damping and mode coupling, which are determined by the ellipticity of magnetization precession. The demonstrated nonlinear mode coupling mechanism and electrical control approach of spin-wave modes could provide the clue to facilitate the implementation of the mutual synchronization map for neuromorphic computing applications in SHNO array networks.
... This can be achieved with VCMA-driven parametric excitations, as already proposed for spintronic oscillators with nano-constrictions and MTJ with two terminals [27,28]. Our calculations predict the robustness of the binarization technique and that it can be achieved in a range of frequencies close to two times the self-oscillation frequency. ...
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