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Typical SEM images of Bi2Se3 from the third growth. [(a)–(d)] Nanocrystals with increased size as the temperature increases compared to the first and second growth, and this growth was carried out at the growth temperature of 600 °C.

Typical SEM images of Bi2Se3 from the third growth. [(a)–(d)] Nanocrystals with increased size as the temperature increases compared to the first and second growth, and this growth was carried out at the growth temperature of 600 °C.

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Topological insulators and their characteristics are among the most highly studied areas in condensed matter physics. Bi2Se3 nanocrystals were synthesized via chemical vapor deposition at different temperatures on a silicon substrate with a gold catalyst. The effects of temperature on the obtained Bi2Se3 nanocrystals were systematically investigate...

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Topological insulators and their characteristics are among the most highly studied areas in condensed matter physics. Bi2Se3 nanocrystals were synthesized via chemical vapor deposition at different temperatures on a silicon substrate with a gold catalyst. The effects of tem- perature on the obtained Bi2Se3 nanocrystals were systematically investiga...

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... Our Bi 2 Se 3 thin film was prepared using the chemical vapor deposition (CVD) method and, therefore, had a uniform substrate coverage, confirmed by optical microscopy (Figure 1b). From the optical image in Figure 1b, one can notice that the synthesized sample has a roughness, similar to other Bi 2 Se 3 samples grown using CVD [50,51]. In order to obtain a qualitative estimate of the roughness, we measured the sample surface with an atomicforce microscope (Figure 1c). ...
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