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Transformer-coupled g -boosted common-gate LNA topologies: (a) single-ended, and (b) fully differential.
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The demand for radio frequency (RF) integrated circuits with reduced power consumption is growing owing to the trend toward system-on-a-chip (SoC) implementations in deep-sub-micron CMOS technologies. The concomitant need for high performance imposes additional challenges for circuit designers. In this paper, a g<sub>m</sub>-boosted common-gate low...
Contexts in source publication
Context 1
... transformer-coupled CGLNA [Fig. 4(a)], differential Colpitts VCO1 (Fig. 8), and QVCO (Fig. 11) were fabricated in a 0.18-m RF CMOS process. The circuits were tested on a wafer-probe station with high-frequency probing ...
Context 2
... verify the -boosting design principle, the turns ratio in the specific implementation of Fig. 4(a) was designed to be 1:1 due to its ease of implementation and modeling. As de- scribed earlier, is also possible using a larger turns ratio. For example, if the turns ratio is 1:2, 2 is achieved which with results in a lower noise figure. The trans- former was designed to resonate with the capacitance at the source of . A transformer ...
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Advances of VLSI and packaging technologies enable condensed integration of an RF system in a single module, known as SoC and SoP. In order to find a better solution between SoC and SoP for RF systems and their sub-systems, it is needed to predict and estimate the performance of each solution. Analytical equations for noise figure and gain of induc...
Citations
... Previous designs have tended to use passive devices such as cross-coupled capacitors [16] or transformers [17] to implement FFAs, because they do not introduce noise. However, the former has a maximum gain limitation of unity and requires differential implementation for phase inversion, while the latter occupies a significant amount of area. ...
This paper presents a brief review of low-power (LP) design techniques for common-gate common-source low-noise amplifiers (CG-CS LNAs) over the last three years. Leveraging two of these techniques, namely, gm-boosting and current reuse, an LP differential low noise transconductance amplifier (LNTA) is developed. The proposed LNTA features a unique noise canceling (NC) scheme that effectively addresses the trade-off between input impedance matching, noise figure (NF), and gain. By employing layout techniques, negative capacitance, and derivative superposition (DS) method, the LNTA achieves further improvements in noise, bandwidth (BW), and linearity performance. The circuit is implemented in 40-nm LP CMOS technology. Post-layout simulation results demonstrate that it consumes only 9.2 mW of power at a supply voltage of 1.2 V. It achieves a minimum NF of 2.43 dB, an average IIP3 of 10.4 dBm, and a transconductance gain of 51.8 mS. Furthermore, the circuit occupies a compact area of only 0.01 mm 2 and exhibits an optimal figure of merit (FoM) compared to the prior arts. Operating in the frequency range of 0.1-5.75 GHz, it is suitable for 5G Sub-6-GHz wideband current-mode receivers.
... Another method for establishing input matching is to use a transformer with a turn ratio of T to CG stage [15]; this technique is passive gain boosting while also minimizing power consumption and NF. By increasing the value of T, the passive gain is increased while the power consumption is reduced and the NF is improved. ...
... In this circuit, since more intrinsic capacitances appear parallel with the resonator, a more frequency deviation can be observed. In most of the other gm-boosted Colpitts configurations [6,7], the gm-booting circuit adds some parasitic capacitances which can limit the above main characteristics of the oscillator. In fact, one of the main limitations for the design of the LC oscillators is the parasitic capacitances appear at their resonator circuit which decreases the oscillation frequency and the circuit tuning range. ...
In this work, a new differential swing enhanced Colpitts CMOS voltage-controlled oscillator (VCO)
suitable for low-voltage applications is presented including a negative cancelation (NC) circuit to
compensate the circuit parasites. The negative transconductance of the proposed VCO is analyzed for
the startup condition of oscillation. Hence, the calculation result of the negative conductance seen by
the resonator of the oscillator is ploted to show the circuit performance at the startup of oscillation. Due
to the parasitic canceling property of the circuit, it can be allowed to oscillate at a high frequency with
a relatively large tuning range. In order to improve the startup condition of oscillation, rank-based
gravitational search algorithm (RB-GSA) is used. RB-GSA is a novel nature inspired optimization
algorithm and determines the circuit parameters’ values to improve the performance of the proposed
method. The simulation results are presented to demonstrate the important features of the proposed
VCO. The proposed VCO designed at 5 GHz with the supply voltage of 0.6 V.
... where m1 n g and m4 n g denote the n th -order transconductances of M 1 and M 4 , respectively, V if is the input voltage at node x (Fig. 30), and β means the boosting factor of g m , which is affected mainly by the gatesource and coupling capacitors (Li et al., 2005). Since C c1 >>C gs4 (C gs4 represents the gate-source parasitic capacitance of M 4 ), β≈2. ...
With a lot of millimeter-wave (mm-Wave) applications being issued, wideband circuits and systems have attracted much attention because of their strong applicability and versatility. In this paper, four transformer-based ultra-wideband mm-Wave circuits demonstrated in CMOS technologies are reviewed from theoretical analysis, implementation, to performance. First, we introduce a mm-Wave low-noise amplifier with transformer-based Gm-boosting and pole-tuning techniques. It achieves wide operating bandwidth, low noise figure, and good gain performance. Second, we review an injection-current-boosting technique which can significantly increase the locking range of mm-Wave injection-locked frequency triplers. Based on the injection-locked principle, we also discuss an ultra-wideband mm-Wave divider with the transformer-based high-order resonator. Finally, an E-band up-conversion mixer is presented; using the two-path transconductance stage and transformer-based load, it obtains good linearity and a large operating band.
... Therefore, inductor-less LNA has become more attractive in these years and several topologies had been proposed in the published literatures [19][20][21][22][23][24][25]. These topologies can be in fact divided into three categories, including common-source (CS) structure with resistor-terminated [15,26], shunt-feedback (SFB) amplifier [27], and common-gate (CG) structure with capacitive cross-coupling or gain boosting techniques [28][29][30][31]. The resistor-terminated CS scheme as shown in Figure 4a provides the input impedance by using a 50-Ω shunt resistor. ...
This paper describes the design of an ultrahigh frequency ultrasound system combined with tightly focused 500 MHz ultrasonic transducers and high frequency wideband low noise amplifier (LNA) integrated circuit (IC) model design. The ultrasonic transducers are designed using Aluminum nitride (AlN) piezoelectric thin film as the piezoelectric element and using silicon lens for focusing. The fabrication and characterization of silicon lens was presented in detail. Finite element simulation was used for transducer design and evaluation. A custom designed LNA circuit is presented for amplifying the ultrasound echo signal with low noise. A Common-source and Common-gate (CS-CG) combination structure with active feedback is adopted for the LNA design so that high gain and wideband performances can be achieved simultaneously. Noise and distortion cancelation mechanisms are also employed in this work to improve the noise figure (NF) and linearity. Designed by using a 0.35 μm complementary metal oxide semiconductor (CMOS) technology, the simulated power gain of the echo signal wideband amplifier is 22.5 dB at 500 MHz with a capacitance load of 1.0 pF. The simulated NF at 500 MHz is 3.62 dB.
... Nevertheless, the capacitors usually have large size and the low quality factor at high frequency, which may degrade the gain and noise performance. In [6], the gm-boosted technique realized by using transformer is proposed. However, the transformer occupies additional expensive chip area at 24 GHz. ...
This paper presents a two-stage low noise amplifier (LNA) for 24 GHz automotive radar applications. Compared with traditional common source (CS) stage, the neutralized topology is used to improve the gain and reverse isolation in the first stage. In the second stage, an enhanced neutralized technique is adopted to improve the gain further. The LNA is fabricated by using standard 180-nm CMOS technology and occupies a chip area of 1.0 × 0.8 mm². The design realizes a gain of 19.8 dB, a noise figure (NF) of 4.7 dB and an input 1 dB compression point (IP1dB)of −12 dBm.
... From the above discussion there is a firm relation between noise figure and input matching of CGLNA. The technique suggested in [6] is based on the significant observation, two g m values are considered for calculating the noise factor of the CGLNA. One is the effective transconductance looking into the source terminal denote it as G m and another one is the intrinsic transconductance of the CGLNA denoted as g m . ...
... In general, G m is not equal to g m . A design challenge in improving CG-LNA is to modify the topology so that G m ≠ g m [6], [7]. Fig. 4 represents the technique of the proposed g m boosted CGLNA technique. ...
... The g m boosted CGLNA is achieved by inverting amplification is shown in Fig. 5 wherein a differential technique allows the active devices to be capacitor crosscoupled [6]- [7]. ∞ → ds r s m R g Figure 5. Capacitor cross coupled differential CGLNA [6], [7] The inverting amplification value A, for the topology of Fig. 5 is given by the capacitor voltage division ratio ...
In this paper, an ultra low power CMOS common gate LNA (CGLNA) with a capacitive cross-coupled (CCC) gm boosting scheme is designed and analysed. The technique described has been employed in literature to reduce the noise figure (NF). In this work we have extended the concept for low voltage operation along with improving NF and also for significant reduction in current consumption. A gm boosted CCCCGLNA is implemented in 90nm CMOS technology. It has a gain of 9.9dB and a noise figure of 0.87dB at 2.4GHz ISM band and consumes less power (0.5mw) from 0.6V supply voltage. The designed gm boosted CCC-CGLNA is suitable for low power application in CMOS technologies.
... However, the Noise Figure of the CG LNA is considerably larger than that of the CMOS commonsource or cascode LNAs. Previously employed in common-source LNAs in [3] and [4], the gm-boosting technique was proposed by [5] to improve the NF performance of a UWB CG LNA. References [6] and [7] independently designed the first lumped LNA circuits for the UWB radio using a cascode circuit and highorder wideband band pass filters (BPF)'s to provide wideband input matching. ...
... [2] Mohammad Shafquatul Islam is Lecturer at American Intenaional University – Bangladesh. [3] Arman Riaz Ochi is Lecturer at American Internaional University – Bangladesh. International Journal of Research in Computer Engineering and Electronics. ...
In communication circuitry detection of ultra weak signals at reception end is delicate. In order to have precision performance and acceptable gain in ultra wide band frequency range the noise performance and power consumption for low noise amplifier is significant. Among different techniques, this paper presents the simulated result for a distributed low noise amplifier with four stage amplification to ensure minimum noise figure as well as low power consumption. The simulation work is based on TSMC 0.18μm process parameter.
... 2.5～4.0 19.6 4.0 8.0 —8.0 90 5.0 —3.0 Common gate Han [7] 5.2 16.5 1.1 12.4 —11.5 180 9.9 —1.6 Inductive degeneration Li [8] 5.8 9.4 2.5 3.4 7.6 180 8.1 15.7 gm-boosted common gate Walling [9] 5.4 21.0 2.8 2.7 —23.0 180 139 —9.1 gm-boosted common gate Borremans [10] 3.4 20.8 2.2 3.8 —11.5 130 11.7 0.2 Active feedback This work 8.0 8.5 5.5 8.4 1.6 110 4.16 5.76 Resistive feedback, no degeneration 표 1. LNA 성능 요약 및 비교표 ...
A low-noise amplifier(LNA) using series RLC matching network and resistive feedback at 8 GHz is presented. Inductive degeneration is used for the input matching with which the proposed LNA shows quite a wide bandwidth in terms of . An equivalent circuit model is deduced for input matching by conversion from parallel circuit to series resonant circuit. By exploiting the resistive feedback and series RLC input matching, fully integrated LNA achieves maximum of 8.5 dB(peak to -3 dB bandwidth is about 3.5 GHz) noise figure of 5.9 dB, and IIP3 of 1.6 dBm while consuming 7 mA from 1.2 V supply.
... On peut utiliser une structure classique de gain actif basé sur un montage SC avec un budget de consommation dédié [34], [48]. Dans [49] le gain est obtenu grâce à un transformateur inductif connecté en entrée. Enfin la technique la plus populaire -car la plus simple-consiste ...
During the past decade the intense development of wireless technologies standard such as WIFI, GSM or Bluetooth reshaped the connectivity environment of any technology customers Among those standards, Wireless Sensor Networks (WSN) and Wireless Personal Area Network (WPAN) are expected to play a key role in our future environments. The large scale spreading of such sensors has been enabled through the strong cost optimization of modern CMOS technologies. The autonomy improvement of such sensor is however a primary concern to allow any kind of remote operation within the limitation of battery life. Even though the emerging energy harvesting domain offer energy friendly environments for such sensor, the electrical autonomy remain as a tight challenge to address. Those requirements of autonomy along with the context of CMOS technology development pushes sometimes fundamental contradictions between circuit's miniaturization and decreased power consumption. In this work, we propose solutions to address simultaneously those autonomy-miniaturization requirements. The study presented here is focused on Low Noise Amplifiers (LNA) and more precisely on the specific case of inductorless design of LNA. Several innovative solutions has been proposed and realized in 65nm & 130nm CMOS technologies in order to highlight the pros and the cons of such design approach. First part of this work is focused on the design of an active inductance to address the area occupation of narrow band system using inductors. We'll explain why such approach rises fundamental limits for radio application. Second part details the design of an ultra low power broadband LNA without inductors. The proposed circuits enable significant improvement in performance tradeoffs for such low power consumption in comparison with known design techniques. We will conclude with general perspectives and other possible design approaches.
