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Transfer characteristics of nMOS and pMOS transistors (0.35-μm CMOS devices, W/L = 1.5 μm/0.35 μm).

Transfer characteristics of nMOS and pMOS transistors (0.35-μm CMOS devices, W/L = 1.5 μm/0.35 μm).

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A threshold-logic gate device consisting of subthreshold MOSFET circuits is proposed. The gate device performs threshold-logic operation, using the technique of current-mode addition and subtraction. Sample digital subsystems, i.e., adders and morphological operation cells based on threshold logic, are designed using the gate devices, and their ope...

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... subthreshold region is a region where the gate- source voltage of a MOSFET is smaller than the threshold voltage of the MOSFET (see [2] for details of the subthresh- old operation of MOSFETs). Figure 4 shows the trans- fer characteristics of nMOS and pMOS transistors (0.35-μm CMOS devices, W/L = 1.5 μm/0.35 μm) we used to design the gate circuit. ...

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