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Transfer characteristic of an O-CMOS inverter stage, exhibiting a maximum gain of 17. The inverter was realized by using the selective UV modification approach of a PMMA dielectric.
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In the present paper a new concept towards O-CMOS technology is presented substantiating the importance of the semiconductor/dielectric interface for charge carrier transport in organic semiconductors. It will be demonstrated that by controlling the interface properties of either SiO2 or PMMA, unipolar p- and n-type OFETs can be realized using a si...
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... realized both unipolar p-and n- type OFETs, by the use of a selective UV modification of the applied PMMA dielectric, two complementary OFETs were connected to form an O-CMOS inverter stage. The respective transfer characteristic is illustrated by Fig. 10, showing a stable operation of the inverter below its supply voltage of V DD = 60V and a steep transition between the inverter's high and low state for both sweep directions. Considering the V in voltage sweep from 0 to 80V, a maximum gain of 17 is obtained. The observed hysteresis, is V out again a superposition of the current ...
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Citations
... [27][28][29] Furthermore, Ahles et al. and Benson et al. succeeded in fabricating pentacene-based organic complementary metal oxide semiconductor transistors (CMOSs). 30,31) Therefore, pentacene is one of the most promising materials for organic CMOSs with a single organic semiconductor material with the introduction of ILs. ...
Nitrogen-doped (N-doped) LaB6 is a candidate material for the bottom-contact electrode of n-type organic field-effect transistors (OFETs). However, the formation of a N-doped LaB6 electrode affects the surface morphology of a pentacene film. In this study, the effects of surface treatments and a N-doped LaB6 interfacial layer (IL) were investigated to improve the pentacene film quality after N-doped LaB6 electrode patterning with diluted HNO3, followed by resist stripping with acetone and methanol. It was found that the sputtering damage during N-doped LaB6 deposition on a SiO2 gate insulator degraded the crystallinity of pentacene. The H2SO4 and H2O2 (SPM) and diluted HF treatments removed the damaged layer on the SiO2 gate insulator surface. Furthermore, the N-doped LaB6 IL improved the crystallinity of pentacene and realized dendritic grain growth. Owing to these surface treatments, the hole mobility improved from 2.8 × 10⁻³ to 0.11 cm²/(Vs), and a steep subthreshold swing of 78 mV/dec for the OFET with top-contact configuration was realized in air even after bottom-contact electrode patterning.
... [12][13][14] Furthermore, Ahles et al. and Benson et al. also succeeded in fabricating pentacene-based organic complementary metal oxide semiconductor transistors (CMOSs). 15,16) Therefore, pentacene is one of the most promising materials for organic CMOSs with a single organic semiconductor material. However, threshold voltage (V TH ) control and the reduction in subthreshold swing (SS) for pentacene-based OFETs with an SiO 2 gate insulator are issues of low-voltage operation and organic CMOS integration. ...
A pentacene-based organic field-effect transistor (OFET) is necessary to work at a low operation voltage and a steep subthreshold swing. The subthreshold swing of pentacene-based OFET was markedly improved by introducing a nitrogen-doped LaB6 interfacial layer (N-doped LaB6 IL) although charge-injection-type hysteresis was observed in I D–V G characteristics. In this study, the thickness dependence of N-doped LaB6 IL for p-type pentacene-based OFET was investigated. A 1.2–2.7-nm-thick N-doped LaB6 IL was deposited on an SiO2 gate insulator by RF sputtering at an RF power of 20–30 W. It was found that a 1.2-nm-thick N-doped LaB6 IL realized a steep subthreshold swing of 75 mV/dec with a mobility of 0.26 cm²/(Vs) for p-type pentacene-based OFET.
IntroductionExperimentalResults and DiscussionConclusion
AcknowledgementsReferences
Electronic trap states at the interface of the gate insulator and the organic semiconductor play a decisive role for the current–voltage characteristic of organic field effect transistors. In this article two techniques will be introduced which eliminate and generate those trap states on SiO2 as well as polymer dielectric interfaces, respectively. Employing these interface modifications, p- and n-type pentacene field-effect transistors as well as an organic CMOS inverter with a single organic semiconductor and a single type of source–drain metallization were engineered. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
