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![Time to retention failure [25]](publication/343533701/figure/fig4/AS:928852108922881@1598467008044/Time-to-retention-failure-25.png)
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![Fig. 3 SET/RESET endurance evaluated for 2 OxRAM devices [24]](publication/343533701/figure/fig3/AS:928852108922880@1598467008006/SET-RESET-endurance-evaluated-for-2-OxRAM-devices-24_Q320.jpg)
![Fig. 4 Time to retention failure [25]](publication/343533701/figure/fig4/AS:928852108922881@1598467008044/Time-to-retention-failure-25_Q320.jpg)
Static Random-Access Memories (SRAMs) are very common in today’s chip industry due to their speed and power consumption but are classified as volatile memories. Non-volatile SRAMs (nvSRAMs) combine SRAM features with non-volatility. This combination has the advantage to retain data after power off or in the case of power failure, enabling energy-ef...
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... [25], a ReRAM based memory with long-term retention exceeding 10 years at 85 °C is successfully demonstrated. Figure 4. represents the time to retention failure with respect to temperature (1000/T). ...
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Citations
... A major goal of nvSRAM is to have a minimal impact on SRAM's fundamental structure. While many nvSRAMs have been presented, including 4T2R, 7T1R, and 8T2R, herein, 7T1R [21] is leveraged. ...
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