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Monocrystalline silicon wafer is up-to-date most used material for the fabrication of solar cells. The recent investigation shows that the quality of cells is often degraded by structural defects emerging during processing steps. Hence the paper gives first an overview of solar cell efficiency investigation on macroscale. Then a detection and micro...
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... thermograpy with thermo-camera is used mainly during a panel operation or after its connection to the source - forward current regime ( Figs. 1 and 2). The variance of cell temperatures is an indicator of the panel lifetime. ...
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... we can try to localize it using SEM micrographs (Fig. 6), Near-field optically Induced Current -NOBIC (Fig. 7) and SPM shadow map of light emission from defect (Fig. 8). So the next step is an electric measurement of this site. Fig. 9 represents typical thermal U-I characteristics in reverse- bias voltage from a site with one defect, and Fig. 10 thermal dependence of light emission vs. applied reverse voltage. ...
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... of the solar cells are quite complicated. Their difficult character is probably the result of a large p-n junction area and a great number of local defects. On this account, we carry out experiments with relatively small samples. To ensure a higher efficiency of the cell, it is possible to remove the defect by focused ion beam (FIB) milling. Fig. 12 represents the removal of defect from Fig. 6, and Fig. 13 shows the U-I plots before and after the defect passivation. Light emission in the visible range from the LEC 2 disappears after the defect removal procedure. The reverse bias voltage U r = 9V, T = 303K. Figure 12. SEM image of defect area after FIB defect removal, sample tilt ...
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... character is probably the result of a large p-n junction area and a great number of local defects. On this account, we carry out experiments with relatively small samples. To ensure a higher efficiency of the cell, it is possible to remove the defect by focused ion beam (FIB) milling. Fig. 12 represents the removal of defect from Fig. 6, and Fig. 13 shows the U-I plots before and after the defect passivation. Light emission in the visible range from the LEC 2 disappears after the defect removal procedure. The reverse bias voltage U r = 9V, T = 303K. Figure 12. SEM image of defect area after FIB defect removal, sample tilt 55°. ...
