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![Figure 1: Articulation of MULTILAYER subprojects [5]](profile/Rita-Faddoul-4/publication/281533160/figure/fig1/AS:669566493540372@1536648500989/Articulation-of-MULTILAYER-subprojects-5_Q320.jpg)
![Figure 1.3: Schematic of an LTCC module [36]](profile/Rita-Faddoul-4/publication/281533160/figure/fig22/AS:669566501928972@1536648502622/Schematic-of-an-LTCC-module-36_Q320.jpg)
This work demonstrates the printing processes potential for manufacturing ceramic based electronic devices. Several printing techniques were studied: screen printing, flexography, rotogravure and inkjet. Ceramic tapes surface properties were characterised: surface pore size, roughness and surface energy. These analyses allowed the selection of the...
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... In fact, because of the high sensitivity of the active semiconductor layer, it is complicated to use high-resolution photolithography to deposit the contacts after deposition of OSC, due to the compatibility of solvents. Hence, printing or evaporation techniques must be used, which do not usually allow a resolution of less than 1 μm [139]. ...
The central aim of this thesis is the exploration of potential applications of molecular spin crossover complexes in electronic and photonic devices. To this aim vacuum thermal deposited, high quality, crystalline thin films of the complex [Fe(HB(tz)3)2] (tz = (1,2,4-triazol-1-yl), displaying robust, above-room-temperature spin crossover, were incorporated into two- and three-terminal device configurations. Large-area, vertical junctions were formed by ITO/[Fe(HB(tz)3)2]/Al stacks. The junctions exhibited up to three orders of magnitude resistance drop when switching from the low-spin to the high-spin state. They revealed also high resistance to fatigue both on storage (> 1 year) and on repeated switching (>10,000) in ambient air. The resistance switching mechanism could be linked to the intrinsic charge transport in the spin crossover film. Similar multilayer junctions with magnetic electrodes were also fabricated for the first time. [Fe(HB(tz)3)2] films were then incorporated into organic field-effect transistors. Different device configurations were created (bottom gate/bottom contact, bottom gate/top contact) - aiming for the use of the spin crossover phenomenon to modulate the transfer/output characteristics of the transistors. Despite considerable difficulties in achieving reproducible temperature-dependent characterizations, we could evidence changes of the device characteristics, which may be related to the spin crossover phenomenon. In parallel, multilayer Ag/[Fe(HB(tz)3)2]/Ag Fabry-Perot cavities were also fabricated. These devices use the remarkable refractive index switching (Δn = 0.04 - 0.2) between the low-spin and high-spin states in the [Fe(HB(tz)3)2] film to achieve modulation of the cavity resonance. This wavelength tuneability is coupled with low absorption losses in the visible and near infrared spectral ranges, providing scope for reconfigurable and self-adaptive photonics applications.
