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The spectral response diagram of different junction groups in 90 nm CMOS technology with 10 µm² area and 0.01 w/cm² illumination: a n+/p-sub simple junction, b p+/n-well/p-sub dual junctions, c n+/p-well/deep-n-well/p-sub triple junctions
Source publication
An energy harvesting capable pixel is designed in 90 nm standard complementary metal oxide semiconductor (CMOS) technology with the spectral response optimization considerations. The pixel can perform 2.22 nW power harvesting in 60 klx of illumination per pixel, while the pixel itself consumes 56.26 pW power. Moreover, the pixel could achieve 1.70...
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