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![The relationships between band gap energy and lattice parameter for semiconductors III–V. The colored area shows the region of prohibited bands required in tandem solar cell materials. Graphic adapted from [6]](publication/352037721/figure/fig1/AS:1030116238966785@1622610258915/The-relationships-between-band-gap-energy-and-lattice-parameter-for-semiconductors-III-V.png)
The relationships between band gap energy and lattice parameter for semiconductors III–V. The colored area shows the region of prohibited bands required in tandem solar cell materials. Graphic adapted from [6]
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In 2008, the alloy aluminum indium nitride, InAlN, was postulated as an excellent candidate to form high-efficiency solar cells. Therefore, the study of physical properties of this ternary alloy on transparent substrates is of paramount importance. In the present research, layers of different thickness of In0.63Al0.37 N were synthesized using the t...
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