Fig 3 - uploaded by A. M. Ahmed
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The relation between the current density (J) and the electric field (E), measured at room temperature, for compositions.
Source publication
In sufficiently wide temperature range (103-483 K), both dc electrical conductivity and thermoelectric power of Ge 40-xSn xSe 60 (X = 14, 12, 10, 8 and 6 at. %) have been investigated. Variations of both electrical and thermoelectric parameters with ambient temperature proved the N-type semiconductor behaviour of those materials. The current densit...
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An improved ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (IUU-MESFET) is proposed in this paper. The structure is obtained by modifying the ultrahigh upper gate height h of the ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (UU-MESFET) structure, and the h is 0.1 μm and 0.2 μm for the IUU-MESFET a...
Citations
The de conductivity (σ) and thermoelectric power (TEP) have been measured for the bulk binary alloy Ge40Te60 and ternary alloy Ge38Sn2Te60. X-ray diffraction confirms that the samples are polycrystalline. The measurments were carried out in the temperature range 133 < T < 400 K. Variation of electrical conductivity with ambient temperature (T) proved the semiconductor behaviour for all range of T for both materials. With annealing time (tan), the electrical conduction activation energy (Eσ) has been found to be with range from 0.11×10-3 eV-63.3×10-3 eV for Ge 40Te60 and from 0.95×10-3 to 52.93×10-3 eV while the thermo-electric power activation energy (Es) has been found to be in the range 2.28×10 -3-39.3×10-3 eV and 1.58×10 -3-34.2×10-3 eV for two alloys, respectively.
DC conductivity (σ) and thermoelectric power (TEP) have been measured for the two bulk ternary Ge36Sn4Te60 and Ge34Sn6 Te60 alloys. X-ray diffraction confirms that the samples are polycrystalline. Measurements were carried out in the temperature range 133<T<400 K and 115<T<400 K for σ and TEP, respectively. Variation of electrical conductivity with ambient temperature (T) proved the semiconductor behaviour for all ranges of T for both materials. The electrical conduction activation energy (Eσ) has been found to be in the range from 23×10−3 to 27×10−3 eV for Ge 36Sn4Te60 and from 6×10−3 to 23×10−3 eV for Ge34Sn6 Te60, while the TEP activation energy (Es) for two alloys, has been found to be, respectively, in the range −3×10−3 to −36×10−3 eV and −3×10−3 to −34×10−3 eV for two alloys.
The microstructure, crystal structure, electrical conductivity (σ), and thermoelectric power (TEP) of Pb1−xSmxSe (x = 0.00, 0.03, 0.06, and 0.09 at.%) are investigated. Pb1−xSmxSe crystallizes in a single-phase rock salt structure. The electrical conductivity and Seebeck coefficient (S) of the system Pb1−xSmxSe were measured in the ambient temperature range 100 ≤ T ≤ 450 K. The temperature dependence of both σ and S shows metal–insulator transition (MIT) at Tm, which depends on the composition itself. The TEP measurements verified the domination of n-type semiconducting behavior. We also find that the power factor S2σ reaches a maximum value.
