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The hysteresis in I–V is brought out under influence of voltage poling direction. The simulated I–V characteristic for interfacial defects (Model 1). Insets shows the hysteresis in I–V characteristics for different voltage poling direction for the case of (layer defects) Model 2

The hysteresis in I–V is brought out under influence of voltage poling direction. The simulated I–V characteristic for interfacial defects (Model 1). Insets shows the hysteresis in I–V characteristics for different voltage poling direction for the case of (layer defects) Model 2

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We presented one dimensional defect model to simulate hysteresis in perovskite solar cells. It can be numerically simulated in perovskite devices with p + -i-n + coniguration by consid- ering ions migration under influence of different voltage biasing. The availability of mobile ion which contribute towards ion migration, ion accumulation at inte...

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... These non-linear differential equations are numerically solved using the Gummel iteration scheme with Newton-Raphson sub-steps. The Poisson equation generally gives information on the relationship between the electric field in the p-n junction and space charge region and is expressed as Ranjan 2021, 2020;Kumar 2021a;Gomathi et al. 2023;Prasanna et al. 2022;Livingston et al. 2023;Islam et al. 2021; http:// scaps. elis. ...
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Hybrid perovskite solar cell technology has a distinct advantage over the conventional solar cell technologies due to its high predicted efficiency and low manufacturing cost. However, its commercialization is hindered by the unpredictability existing in its J-V characteristics leading to ambiguous efficiency estimation. Modeling the hysteresis in the J-V characteristics is a means of curtailing this ambiguity. It is established in literature that hysteresis models can be derived from the non-linear behavior of ferroelectric materials. Perovskite, which forms the light absorbing region of the solar cell is a ferroelectric material. In this paper, an equivalent circuit model for the hybrid perovskite solar cell is proposed in which the reasons for origin of hysteresis is characterized as varying capacitance to model hysteresis. A Landau–Khalatnikov subcircuit which portrays this variation is the principal addition to the conventional model to include hysteresis effect. The model parameters of the subcircuit are estimated from the inherent properties of perovskites. Hence, the proposed equivalent circuit model is completely physics based and it links the material property of perovskite to its equivalent circuit model parameters.
... A few approaches were suggested in literature for modeling the hysteresis of HPSCs. Some of the models are numerical [8][9][10][11], while the others are analytical [12][13][14]. A few equivalent circuit models (ECMs) are also proposed for the same [15][16][17][18][19][20][21][22][23][24][25]. ...
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Full-text available
Hybrid perovskite solar cell technology has a distinct advantage over the conventional solar cell technologies due to its high predicted efficiency and low manufacturing cost. However, its commercialization is hindered by the unpredictability existing in its J-V characteristics leading to ambiguous efficiency estimation. Modeling the hysteresis in the J-V characteristics is a means of curtailing this ambiguity. It is established in literature that hysteresis models can be derived from the non-linear behavior of ferroelectric materials. Perovskite, which forms the light absorbing region of the solar cell is a ferroelectric material. In this paper, an equivalent circuit model for the hybrid perovskite solar cell is proposed in which the reasons for origin of hysteresis is characterized as varying capacitance to model hysteresis. A Landau-Khalatnikov subcircuit which portrays this variation is the principal addition to the conventional model to include hysteresis effect. The model parameters of the subcircuit are estimated from the inherent properties of perovskites. Hence, the proposed equivalent circuit model is completely physics based and it links the material property of perovskite to its equivalent circuit model parameters.
... A few approaches were suggested in literature for modeling the hysteresis of HPSCs. Some of the models are numerical [8][9][10][11], while the others are analytical [12][13][14]. A few equivalent circuit models (ECMs) are also proposed for the same [15][16][17][18][19][20][21][22][23][24][25]. ...
Preprint
Full-text available
Hybrid perovskite solar cell technology has a distinct advantage over the conventional solar cell technologies due to its high predicted efficiency and low manufacturing cost. However, its commercialization is hindered by the unpredictability existing in its J-V characteristics leading to ambiguous efficiency estimation. Modeling the hysteresis in the J-V characteristics is a means of curtailing this ambiguity. It is established in literature that hysteresis models can be derived from the non-linear behavior of ferroelectric materials. Perovskite, which forms the light absorbing region of the solar cell is a ferroelectric material. In this paper, an equivalent circuit model for the hybrid perovskite solar cell is proposed in which the reasons for origin of hysteresis is characterized as varying capacitance to model hysteresis. A Landau-Khalatnikov subcircuit which portrays this variation is the principal addition to the conventional model to include hysteresis effect. The model parameters of the subcircuit are estimated from the inherent properties of perovskites. Hence, the proposed equivalent circuit model is completely physics based and it links the material property of perovskite to its equivalent circuit model parameters.
... But as V A increases, junction shrinks to absorber thickness, and thereby the C increases which is in sound agreement with the Mott-Schottky relationship. The V bi for the device was found to be 0.89 eV and was evaluated by intercepting the V A axis [63]. ...
... The Capacitance frequency relation is given by (8) wherein C Lf is the lower frequency capacitance which depends on trap density and carrier concentration, ω is the angular frequency, C dep is the depletion region capacitance [63]. ...
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