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The design of the polarization-sensitive narrowband NIR photodetector. (a) shows the schematic picture of the photodetector, where the gold film in the plasmonic structure in the previous case is replaced by a metasurface of a gold grating. (b, c) The absorption of the polarization-sensitive Tamm plasmonic structure (six periods in DBR), calculated by FDTD Solutions [26], shows the maximum (inside the band gap of the DBR from 1.292 µm to 1.640 µm) appears at (b) 1.295 µm for x-polarized normal incidence, and (c) 1.482 µm for y-polarized normal incidence. Insets in (a, b) are the improved narrowband absorption of Tamm plasmonic structure with 30 periods in DBR. (d) The absorption is calculated by FDTD Solutions [26] for x-polarized and y-polarized normal incidence simultaneously (equivalence to circular polarization). (e, f) The two-dimensional density picture provides electromagnetic energy distribution of the Tamm state in periodic plasmonic structure for normal incidence of (e) x-polarization at the corresponding absorption peak inside the band gap and (f) y-polarization at the corresponding absorption peak inside the band gap calculated by FDTD Solutions [26].

The design of the polarization-sensitive narrowband NIR photodetector. (a) shows the schematic picture of the photodetector, where the gold film in the plasmonic structure in the previous case is replaced by a metasurface of a gold grating. (b, c) The absorption of the polarization-sensitive Tamm plasmonic structure (six periods in DBR), calculated by FDTD Solutions [26], shows the maximum (inside the band gap of the DBR from 1.292 µm to 1.640 µm) appears at (b) 1.295 µm for x-polarized normal incidence, and (c) 1.482 µm for y-polarized normal incidence. Insets in (a, b) are the improved narrowband absorption of Tamm plasmonic structure with 30 periods in DBR. (d) The absorption is calculated by FDTD Solutions [26] for x-polarized and y-polarized normal incidence simultaneously (equivalence to circular polarization). (e, f) The two-dimensional density picture provides electromagnetic energy distribution of the Tamm state in periodic plasmonic structure for normal incidence of (e) x-polarization at the corresponding absorption peak inside the band gap and (f) y-polarization at the corresponding absorption peak inside the band gap calculated by FDTD Solutions [26].

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Article
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Polarization-sensitive narrowband photodetection at near-infrared (NIR) has attracted significant interest in optical communication, environmental monitoring, and intelligent recognition system. However, the current narrowband spectroscopy heavily relies on the extra filter or bulk spectrometer, which deviates from the miniaturization of on-chip in...

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... At an excitation wavelength of 1581 nm, the device demonstrates a peak photoresponse of 8.26 nA/mW. In a recent study, conducted by Yu et al., they presented the fabrication and evaluation of a hybrid graphene photodetector operating in the near-infrared (NIR) range [21]. This detector utilizes optical Tamm states (OTSs) to enable simultaneous detection of both wavelength and polarization. ...
Article
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Tamm plasmon polaritons (TPPs) have emerged as a promising platform for photodetector applications due to their strong light–matter interaction and potential for efficient light absorption. In this work, a design for a broadband photodetector (PD) based on the optical Tamm plasmon (OTS) state generated in a periodic metal–semiconductor–distributed Bragg reflector (DBR) geometry is proposed. The transfer matrix method (TMM) was used to study the propagation of electromagnetic waves through the proposed structure. By exciting the structure with incident light and analyzing the electric field profile within the multilayer structure at the resonant wavelength, we observe a distinctive electric field distribution that indicates the presence of Tamm plasmon modes. A comparative study was conducted to investigate the optical properties of a photodetector in the near-infrared (NIR) range by varying parameters such as thickness. By optimizing the thickness, we successfully achieved a broadband photoresponse in the photodetector, with a maximum responsivity of 21.8 mA/W at a wavelength of 1354 nm, which falls within the photonic bandgap region. FWHM was found to be 590 nm for the responsivity spectrum. The geometry also presents maximum absorption with FWHM calculated to be about 871.5 nm. The proposed geometry offers a broadband photoresponse, which is advantageous for the advancement of Tamm-based detector technologies. The ability to detect light over a wide operation range makes this mechanism highly beneficial for various applications.
... The combination of graphene and metasurface can also be applied to photodetection. Near-infrared narrowband photodetection has very important application value, but generally relies on additional filters and spectrometers, which is not conducive to the miniaturization of chip integration [88,89]. Polarizationsensitive narrowband infrared photodetection can be realized by optical Tamm state engineering [88]. ...
... Near-infrared narrowband photodetection has very important application value, but generally relies on additional filters and spectrometers, which is not conducive to the miniaturization of chip integration [88,89]. Polarizationsensitive narrowband infrared photodetection can be realized by optical Tamm state engineering [88]. Optical Tamm states are found in one-dimensional multilayer photonic structures, which can confine electromagnetic waves at interfaces. ...
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