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The dependence of the sublimation temperature of ammonium chloride on the partial pressures of ammonia and hydrogen chloride.

The dependence of the sublimation temperature of ammonium chloride on the partial pressures of ammonia and hydrogen chloride.

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An HVPE reactor for the growth of bulk GaN crystals with a diameter of 50 mm was developed. Growth rate non-uniformity of 1% was achieved using an axisymmetric vertical gas injector with stagnation point flow. Chemically-resistant refractory materials were used instead of quartz in the reactor hot zone. High-capacity external gallium precursor sour...

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Context 1
... p HCl and p N H3 are the partial pressure of GaCl and ammonia, respectively, and µ N H3 , µ HCl , µ N H4Cl are the standard chemical potentials of the species. The dependence of the temperature required to prevent NH 4 Cl condensation on the partial pressures of hydrogen chloride and ammonia is shown in Fig. 4. If gallium chloride does not completely react in the growth chamber, the formation of the GaCl 3 :NH 3 complex is possible in the exhaust. This substance has a boiling point of 438 • C [51] and requires significantly higher heating of the exhaust compared to ammonium chloride to prevent ...
Context 2
... p HCl and p N H3 are the partial pressure of GaCl and ammonia, respectively, and µ N H3 , µ HCl , µ N H4Cl are the standard chemical potentials of the species. The dependence of the temperature required to prevent NH 4 Cl condensation on the partial pressures of hydrogen chloride and ammonia is shown in Fig. 4. If gallium chloride does not completely react in the growth chamber, the formation of the GaCl 3 :NH 3 complex is possible in the exhaust. This substance has a boiling point of 438 • C [51] and requires significantly higher heating of the exhaust compared to ammonium chloride to prevent ...