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In this work, a promising dual-gated thin film transistor (TFT) structure has been proposed and introduced in the shift register (SR)-integrated circuits to reduce the rising time. The threshold voltage can be simultaneously changed by the top gate and the bottom gate in the proposed dual-gated TFTs. When the SR circuits start to export the scan si...
Contexts in source publication
Context 1
... cross-sectional schematic diagram of the dual-gated IGZO-TFTs is shown in Fig- ure 1. The TFTs are fabricated through a commercial white AMOLED process. ...
Context 2
... the function test, the proposed SR circuits were fabricated in a 31-inch AMOLED display. The display structure can be seen in Figure 10a. Figure 10b shows a photograph of the display image of the 31-inch AMOLED display, which was fabricated in the 4.5-generation AMOLED display manufacture factory. ...
Context 3
... display structure can be seen in Figure 10a. Figure 10b shows a photograph of the display image of the 31-inch AMOLED display, which was fabricated in the 4.5-generation AMOLED display manufacture factory. The image is smooth and clear, indicating the high quality of the proposed SR circuits. ...
Citations
... However, n-type MOx TFTs often have depletion mode characteristics, i.e., the threshold voltage (V TH ) is lower than 0 V. So, if a peripheral driving circuit of the AM display such as the scan driver is composed only of MOx TFT, the TFT does not turn off when the gatesource voltage (V GS ) is 0 V due to the depletion mode characteristics, causing the circuit to malfunction and increasing the power consumption. To cope with the depletion mode characteristics, the peripheral driving circuit requires additional techniques such as STT structure and negative voltage clock, resulting in a more complex circuit structure and a larger area [9][10][11][12][13][14]. Therefore, MOx TFT-based scan driver circuits have not been utilized for high-resolution-e.g., over 600 ppi-mobile displays with narrow bezels. ...
... In this paper, we report a simple scan driver circuit composed of only ten TFTs and two capacitors, which can be integrated into a small bezel area of a high-resolution mobile display even with MOx TFTs, in contrast with the previous circuit [9][10][11][12][13][14]. We tried to devise an Figure 1 shows the schematic of a conventional p-type LTPS 8T-2C scan driver circuit from Samsung Display Co., Ltd. of Republic of Korea. ...
... For these reasons, the n-type MOx TFT version of the conventional 8T-2C scan driver circuit is inadequate for use, and a new circuit structure is required for small-area mobile AM displays. two capacitors, which can be integrated into a small bezel area of a high-resolution mobile display even with MOx TFTs, in contrast with the previous circuit [9][10][11][12][13][14]. We tried to devise an optimal solution that minimizes the area increase and provides an improved device margin considering the practical operation conditions of the high-resolution mobile displays. ...
Metal-oxide (MOx) thin-film transistors (TFTs) require complex circuit structures to cope with their depletion mode characteristics, making them applicable only to large-area active matrix (AM) displays despite their low manufacturing cost and decent performance. In this paper, we report a simple MOx 10T-2C scan driver circuit that overcomes the depletion mode characteristics using a series-connected two transistor (STT) configuration and clock signals with two kinds of low-voltage levels. The proposed circuit has a wide operating range of TFT characteristics, i.e., −2.8 V ≤ VTH ≤ +3.0 V. Through the measurement results of the manufactured sample, it was confirmed that the performance and area of our circuit are suitable for high-resolution mobile displays.
... With the increasing demand for organic-light-emitting-diode (OLEDs) displays with low power, deep-blue emitters with a high efficiency have attracted much attention [1][2][3][4][5][6][7][8][9]. The commonly used fluorescent luminescent materials exhibit the characteristics of a long lifetime and low cost. ...
High-efficiency deep-blue organic light-emitting diodes (OLEDs) play a crucial role in realizing ultra-high-definition (UHD) flat-panel displays and reducing power consumption. Generally, most reported OLEDs with a Commission Internationale de L’Eclairage (CIE) y coordinate < 0.06 are achieved by traditional fluorescent deep-blue emitters. However, it is challenging to obtain deep-blue fluorescent OLEDs with a high external quantum efficiency (EQE) (reaching the theoretical limit of 5%). In this work, we have successfully employed a hole-transporting material for an emitter, which can increase the efficiency in deep-blue OLEDs. The device employed with the proposed hole-transporting material exhibits deep-blue emission peaks at 427.0 nm with CIE coordinates of (0.155, 0.051), a turn-on voltage (Von) of 4.5 V, and an EQE of 4.5%. The performance of the OLED can be improved by 5.0% by optimizing the device structure. Finally, the flexible display when using the OLED devices exhibited a high image quality.
Polymers have been fundamental in advanced applications for an extended period due to their versatility and ease of molding to specific needs (Afzal and Nawab in Compos Solut Ballist 139–152, 2021) [1]. Nonetheless, using a single polymer often falls short of meeting the demands of advanced applications. Consequently, polymer composites have gained worldwide attention.
