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![LIII XANES spectra of Pb-related materials (Reference data of PbS and PbO materials reported in [20, 21]), (inner) PbS-doped optical fiber preform and its cross-section.](publication/273523874/figure/fig1/AS:11431281253169847@1718839653171/LIII-XANES-spectra-of-Pb-related-materials-Reference-data-of-PbS-and-PbO-materials.jpg)
LIII XANES spectra of Pb-related materials (Reference data of PbS and PbO materials reported in [20, 21]), (inner) PbS-doped optical fiber preform and its cross-section.
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The PbS Quantum Dots (QDs)-doped silica optical fiber is fabricated using atomic layer deposition (ALD) technique in combination with modified chemical vapor deposition (MCVD) technology. PbS materials are introduced into the fiber core and then formed to QDs in the optical fiber materials during the preparation process. Its structure features and...
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Citations
... Initially, the optimization of ground-state local structural models was conducted employing the Becke-3-Lee-Yang-Parr (B3LYP) hybrid function in the Gaussian-09 program [32]. The 6-311G* basis sets were applied for H, O, and Si elements, while the Lanl2dz basis sets were used for Bi [33,34]. Subsequently, the excited state characteristics of the local structures were analyzed utilizing time-dependent density functional theory (TD-DFT) [28]. ...
In this study, a Si defect structure was added into the silica network in order to activate the bismuth and silica structure active center. TD-DFT theoretical simulations show that the Bi and Si ODC(I) models can excite the active center of the E-band at 1408 nm. Additionally, the Bi-doped silica fiber (BDSF) with improved fluorescence was fabricated using atomic layer deposition (ALD) combined with the modified chemical vapor deposition (MCVD) technique. Some tests were used to investigate the structural and optical properties of BDSF. The UV-VIS spectral peak of the BDSF preform is 424 cm ⁻¹ , and the binding energy of XPS is 439.3 eV, indicating the presence of Bi° atom in BDSF. The Raman peak near 811 cm ⁻¹ corresponds to the Bi-O bond. The Si POL defect lacks a Bi-O structure, and the reason for the absence of simulated active center from the E-band is explained. A fluorescence spectrometer was used to analyze the emission peak of a BDSF at 1420 nm. The gain of the BDSF based optical amplifier was measured 28.8 dB at 1420 nm and confirmed the effective stimulation of the bismuth active center in the E-band.
... Three fiber samples with different concentrations of Bi ions doping fabricated by ALD combined with MCVD [20][21][22]. The main elemental components of the three fiber samples are measured by an electron probe micro-analyzer (EPMA-8050 G, SHIMADZU, Japan), as shown in Table 1. ...
Three Er-doped fibers (EDFs) with different concentrations of Bi ions doping were fabricated by atomic layer deposition combined with modified chemical vapor deposition. The radiation-induced absorption (RIA) could be dramatically weakened by co-doping Bi. Especially, the RIA of Bi/Er co-doped fiber (BEDF) at 1300 nm was 56.0% lower than that of EDF after a 1500 Gy irradiation treatment. With the increase of the irradiation dose, the fluorescence intensity and lifetime of EDF decreased continuously, while BEDF showed a trend, increasing first and then decreasing, and changed little before and after irradiation. The gain characteristics and laser threshold power of BEDF are less varied than those of EDF before and after irradiation. In addition, an irradiation simulation model of EDF and BEDF fiber was established through GEANT4 simulation toolkit and found that Bi ions are more likely to absorb gamma rays, thereby reducing the impact of irradiation on Er ions in BEDF. These results indicate that Bi co-doped EDF has significant performance improvements in radiation resistance, making it ideal for applications in harsh radiation environments.
... The Bi-doped silica fiber was fabricated by ALD combined with MCVD [22][23][24][25][26][27][28] as shown in Fig. 1. Firstly, a SiO 2 porous soot layer was deposited on the inner wall of the quartz substrate tube via the MCVD. ...
... At the level of B3LYP hybrid function, the ground state geometry of the reactants including the intermediate substances is optimized. Among them, silicon (Si), oxygen (O), hydrogen (H) and phosphorus (P) atoms use 6-311 G ** base set pairs to set bismuth atoms on the basis of Lanl2DZ, which can provide a relatively reasonable calculation time and good precision reaction [28,33]. The absorption and emission spectra were calculated based on the TDDFT [35,36]. ...
In this work, bismuth doped fiber (BDF) and bismuth/phosphosilicate co-doped fiber (BPDF) were fabricated by atomic layer deposition (ALD) combined with the modified chemical vapor deposition (MCVD). The spectral characteristics are studied experimentally and the BPDF has good excitation effect covering the O band. A diode pumped BPDF amplifier with the gain over 20 dB from 1298-1348 nm (50 nm) has been demonstrated. The maximum gain of 30 dB was measured at 1320 nm with a gain coefficient of around 0.5 dB/m. Furthermore, we constructed different local structures through simulation and found that compared with the BDF, BPDF has a stronger excited state and a greater significance in O-band. This is mainly because phosphorus (P) doping changes the associated electron distribution and forms the bismuth-phosphorus active center. The fiber has a high gain coefficient, which is of great significance for the industrialization of O-band fiber amplifier.
... One can see that their profiles can match well. The active RC-EDF was fabricated by the atomic layer deposition (ALD) doping technique within the combination of the modified chemical vapor deposition (MCVD) [35,36]. First, a thick silica soot layer was deposited by MCVD, and then Er dopants were introduced into the soot layer by ALD, where the dopant concentrations were controlled through regulating the flow rate of Er precursors. ...
We develop a model of interaction between photons and electrons in an active vortex field, which can generate a fluorescence spectrum with the characteristics of orbital angular momentum (OAM). In an active optical fiber, our findings generalize the notion of photon–electron interaction and point to a new kind of OAM-mode broad-spectrum light source, which could be interpreted in two processes: one microscopically is the excitation of OAM-carrying photons based on the photon–electron interaction; the other macroscopically is the emission and transmission of a donut-shaped fluorescence in a vortex field with a spiral phase wavefront in a ring-core active fiber. Here we present a straightforward experimental method that the emission of broad-spectrum fluorescence with an OAM feature is actualized and validated in a ring-core erbium-doped fiber. The spectrum has a broad spectral width up to 50 nm. Furthermore, four wavelengths are extracted from the fluorescence spectrum and superimposed with their corresponding Gaussian beams, from which the spiral-shaped interferograms of OAM modes in a broad spectrum are identified with high purity. The application of the OAM-based fluorescence light source may range from classical to quantum information technologies, and enable high-capacity communication, high-sensitivity sensing, high-resolution fluorescence imaging, etc.
... drawing tower must be modified to include application of cladding and buffer layers in practical fiber production. Successful fabrication of luminescent traditional fibers using a double-crucible approach [63], QD-doped hollow-core PCF [64] and QD-doped negativecurvature PCF [65], and many variations on the main theme have been reported in the scientific literature. ...
In this White Paper for the 2021 Snowmass process, we detail the status and prospects for dual-readout calorimetry. While all calorimeters allow estimation of energy depositions in their active material, dual-readout calorimeters aim to provide additional information on the light produced in the sensitive media via, for example, wavelength and polarization, and/or a precision timing measurements, allowing an estimation of the shower-by-shower particle content. Utilizing this knowledge of the shower particle content may allow unprecedented energy resolution for hadronic particles and jets and new types of particle flow algorithms. We also discuss the impact continued development of this kind of calorimetry could have on precision on Higgs boson property measurements at future colliders.
... Jahromi et al proposed and fabricated a highly sensitive solid-state acetone sensor based on lead sulfide nanosheets [15]. Furthermore, it can also be utilized in light-emitting diode [16,17], Optical waveguides [18], optical fiber amplifiers [19], photon detectors [20,21], IR detectors [22], display devices [23], and solar cells [24][25][26]. PbS nanocrystals with various morphologies such as nanoparticles [27], quantum dots [28], thin film [29], nanosheet [15], hollow spheres [30], wires [31,32], rods [33,34], tubes [34], hierarchical structures [35] and star-like structures [36] have also been synthesized nowadays with gas, liquid and solid approaches. ...
Lead (Pb) nanowire arrays were fabricated with anodic aluminum oxide (AAO) templates of 30 nm, 100 nm and 300 nm in pore diameters. Through vacuum injection molding process, Pb/AAO composite was obtained, and lead sulfide (PbS) could further be synthesized after exposing to sulfur gas. AAO templates with different pore sizes were fabricated by using pure aluminum in a two-step anodization. Three types of solutions, which are 10 vol% sulfuric acid, 3 wt% oxalic acid and 1 vol% phosphoric acid, were adopted to achieve AAO of various pore sizes. Different sulfurization temperatures and time spans were applied for studying on the formation mechanism of PbS. Finally, the morphology, composition, structure and elements distribution of the as-prepared Pb and PbS nanowires were confirmed through the use of scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), element-mapping, X -ray diffraction (XRD) and Transmission Electron Microscopy (TEM) analysis. The results indicated that Pb nanowires were successfully obtained after applying vacuum injection molding process with 50 kgf/cm2 hydraulic pressure, and PbS nano arrays can be formed by sulfurization at 500℃ for 5 hours. Furthermore, an optical property, ultraviolet-visible (UV-Vis) absorption, was also measured. The measurement of the PbS nanowires showed that a significant quantum confinement effect made the energy gap produce a blue shift from 0.41 eV to 1.65 eV or 1.72 eV.
... It has been demonstrated that atomic layer deposition (ALD) is an effective approach for uniformly doping optically active ions into optical fiber materials at high contents levels in the context of an MCVD process [24][25][26]. In this work, we fabricated Pb/Bi co-doped silica optical fibers using ALD and systematically investigated their optical characteristics, including absorption, fluorescence spectra and optical gain properties. ...
... This process is detailed in Refs. [24][25][26]. The chemical contents of Pb, Bi, and Al in the optical fiber preform core region were analyzed using the X-ray fluorescence (XRF-1800, SHIMADZU, Japan) method, and the contents of Pb, Bi, and Al ions were determined to be approximately 0.29 wt%, 0.15 wt%, and 1.10 wt%, respectively. ...
We fabricated a novel Pb/Bi co-doped silica optical fiber using an atomic layer deposition technique in conjunction with a modified chemical vapour deposition process. The fabricated fiber exhibits distinct absorption peaks at 690, 800, 1000 and 1377 nm. An ultra-broad luminescence band with a 10 dB bandwidth of 600 nm from 1050 nm to 1650 nm was achieved using a dual pumps system. The lifetime of the co-doped fiber at 1150 nm is approximately 740 μs. Additionally, a Pb/Bi co-doped fiber with a length of only 0.2 m, pumped at 980 nm exhibits an optical gain ranging from 1010 to 1190 nm with a maximum peak gain of 12 dB. A theoretical model considering the interaction between Pb and Bi ions is proposed to interpret the observed spectral characteristics. There may be a coupling effect and/or energy transfer between Pb and Bi ions during a deleterious non-radiative quenching process. The Pb/Bi co-doped fiber offers a number of advantages compared to a conventional Bi-doped fiber in terms of broadband luminesce, fluorescence lifetime, and gain. Additionally, it can act as a super fluorescence fiber sources for optical amplifiers and novel fiber lasers in the medical and communication fields.
... Varieties of photonic, optoelectronic and electronic devices have been designed and fabricated based on different forms of PbS (i.e., bulk, nanocrystal, nanosheets, and … PbS). Optical waveguides [1], optical fiber amplifiers [2], lasers [3], heterojunction photovoltaic devices [4], photon detectors [5,6], solar cells [7][8][9], saturable absorbers for passive Q-switching [10], gas sensors [11], and thin-film transistor gas sensors [12] are some examples of photonic, optoelectronic and electronic devices based on different forms of PbS. ...
In this paper optical and electronic properties of lead sulfide spherical nano particle are studied using the density functional theory. To this end, a lead sulfide unit cell with Fm-3 m(225) symmetry is converted to a 1 nm spherical nanocluster, and then is placed into a 2 nm supercell structure. Total density of state (DOS) and partial density of states (PDOS) are considered to study electronic properties. The highest energy level of the valence band and its lowest energy level originate from 3p of sulfur atom and 5d of Lead atom respectively. The absorption coefficient, conductivity, dielectric function, loss function, reflective index, and reflectivity spectrum are studied to investigate optical properties for radiation power up to 35 eV. The analyses identify that the imaginary part of dielectric function has two main regions representing the ohmic resistance of PbS at the regions. The real part of the dielectric function has a static dielectric constant of 6.5 (ε(0) = 6.4) representing the plasma frequency of lead sulfide spherical nano particle. Moreover, the material has maximum light absorption for photons with 10 eV energy which relates to the ultraviolet spectrum. However, it shows considerable absorption for photons with 5 eV and 30 eV energy. The static refractive index is found to be 2.5 (n(0) = 2.5) and maximum refractivity occurs in the visible region for photons with energy less than 3 eV. Analysis of the conductivity of lead sulfide spherical nano particle shows that it is a semiconductor material with a significant loss for photons with 2-6 eV energy at the visible range.
... It is well known that the QDs size-tunability extremely affects the optical and electrical properties of these semiconductor nanocrystals. Semiconductor QDs that absorb or emit lights in the infrared spectral region are promising candidates for all-optical amplifiers in telecommunication bands [10,11]. Compared to the other conventional amplifiers such as erbium-doped optical amplifiers and bulk or even quantum well semiconductor optical amplifiers, semiconductor QD fiber amplifiers (SQDFAs) are characterized by ultra-wide operating wavelength range, fast gain recovery time, high saturation power, low noise-figure and the potential of being integrated with other photonic devices [12][13][14]. ...
In this paper, the gain engineering of a semiconductor quantum dots fiber amplifier (SQDFA) is studied. The optical amplification is realized by exciting the PbS quantum dots (QDs) coated around the tapered single-mode fiber (SMF) coupler with an evanescent wave. The gain spectra and saturation properties of the SQDFA are obtained via solving the rate and coupled power equations based on the two-level model. Then, the effect of the signal wavelength, pump power and amplifier length on the saturation characteristics is numerically simulated. The obtained results show that the proposed model is in a good agreement with the previous experimental results. Unique characteristics of the SQDFA such as the broadband optical gain and smooth bandwidth are of great interest for dense wavelength division multiplexing (DWDM) systems. Therefore, the proposed model show promising applications in the future fiber-optic communications.
... These shifts are typical reflections associated with incorporation into the crystal lattice [28][29][30][31][32]. 96 and 3.623 nm, respectively. This is consistent with the previous report on d-spacing for PbS [33,34]. ...
... nm, with d-spacing of 2.438 and 3.623 nm, respectively. This is consistent with the previous report on d-spacing for PbS [33,34]. The lattice fringe pattern of both materials can be attributed to their polycrystalline nature. ...
... nm, with d-spacing of 2.43896 and 3.623 nm, respectively. This is consistent with the previous report on d-spacing for PbS[33,34].97 The lattice fringe pattern of both materials can be attributed to their polycrystalline nature. ...
