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TEM micrographs of silicide films on Si and SiO 2 after the selective etching of TiSi x deposited at 675 ° C: (a, b) x = 2, (c, d) x = 1.5, and (e, f) x = 1.3.
Source publication
TiSi2and TiN thin films are deposited with the surface-diffusion reactions of titanium with silicon and nitrogen, respectively. It is demonstrated that the deposition of a TiSi1.3alloy onto an Si substrate heated to 675C produces a low-resistivity TiSi2film. At the same time, a silicide film forms on SiO2. This film can be distinguished from the di...
Contexts in source publication
Context 1
... had different crystal structures even when titanium and silicon were sput- tered in a ratio close to the stoichiometric titanium dis- ilicide. We have found that if the stoichiometry of the alloy sputtered is close to TiSi 2 and the substrate tem- perature is 675°ë , then polycrystalline TiSi 2 films with grain size 0.3-0.5 µ m are produced on Si (Fig. 1b) and polycrystalline silicide films with grain size 0.1- 0.2 µ m are produced on SiO 2 (Fig. 1a). These findings indicate the structural contrast between the films grown on Si and SiO 2 , respectively. However, structural con- trast alone does not allow one to distinguish between a TiSi 2 /Si and a TiSi 2 /SiO 2 structure in order to ...
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... to the stoichiometric titanium dis- ilicide. We have found that if the stoichiometry of the alloy sputtered is close to TiSi 2 and the substrate tem- perature is 675°ë , then polycrystalline TiSi 2 films with grain size 0.3-0.5 µ m are produced on Si (Fig. 1b) and polycrystalline silicide films with grain size 0.1- 0.2 µ m are produced on SiO 2 (Fig. 1a). These findings indicate the structural contrast between the films grown on Si and SiO 2 , respectively. However, structural con- trast alone does not allow one to distinguish between a TiSi 2 /Si and a TiSi 2 /SiO 2 structure in order to etch away the ...
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... the stoichiometry of the alloy is TiSi 1.5 , a TiSi 2 C54 phase forms on Si (Fig. 1d). On the other hand, the film on SiO 2 contains various silicides, mainly metal- rich ones and the monosilicide. There is also a certain amount of TiSi 2 . Thus, the films on Si and SiO 2 exhibit phase as well as structural contrast. This allowed us to selectively etch away almost all of the film on the oxide. Only a few electrically ...
Context 4
... 2 contains various silicides, mainly metal- rich ones and the monosilicide. There is also a certain amount of TiSi 2 . Thus, the films on Si and SiO 2 exhibit phase as well as structural contrast. This allowed us to selectively etch away almost all of the film on the oxide. Only a few electrically isolated islands can be observed on the surface (Fig. ...
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... the deposition of TiSi 1.3 , the structural and phase contrast between the films on Si and SiO 2 was so large that we were able to selectively remove the entire alloy from SiO 2 without affecting the disilicide on sili- con (Fig. 1e). The silicide phase on Si was identified as TiSi 2 C54 with a film resistivity of 18-20 µΩ cm (Fig. ...
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... the deposition of TiSi 1.3 , the structural and phase contrast between the films on Si and SiO 2 was so large that we were able to selectively remove the entire alloy from SiO 2 without affecting the disilicide on sili- con (Fig. 1e). The silicide phase on Si was identified as TiSi 2 C54 with a film resistivity of 18-20 µΩ cm (Fig. ...
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... should be noted that the silicide and the silicon substrate are separated by a layer 5-7 nm thick (Fig. 1). The layer withstands substrate temperatures up to about 700°C and the growth of the TiSi 2 C54 phase. This phe- nomenon could be related to the mechanism of film growth during the deposition on a heated substrate. Figure 2 shows Rutherford backscattering spectra obtained after the etching of a film that formed on Si and SiO 2 at a ...
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Citations
... In earlier studies, Valiev et al. [7] and Vasiliev et al. [8,9] established that surface-diffusion reactions between the metal, the silicon, and nitrogen can be useful for making thin and ultrathin silicide and nitride films of almost ultimate electrical performance. In this method a homogeneous silicide layer is formed at a temperature 200-300° C less than that required by volume solid-phase reactions. ...
The surface-diffusion interaction is studied experimentally between cobalt and a heated Ti/Si(100) substrate under reactive magnetron sputtering in an argon–nitrogen atmosphere. A model is proposed that accounts for the nature of silicide formation in the Co/Ti/Si system by volume and surface-diffusion reactions between cobalt and the substrate. It is shown that the diffusion of cobalt into the silicon is impeded by the TiSi
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