Figure - available from: AIP Advances
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Synchrotron-based diffusely scattered intensity close to the symmetric and asymmetric Si(004) (a) and (b) and Si (224) (c) and (d) reflections. Both patterns have been taken for the monolithic (a) and (c) and etched structures (b) and (d). The arrow in (d) indicates the direction to the reciprocal origin. Intensity on this line corresponds to fully relaxed unit cells.
Source publication
We systematically investigate structural parameters, such as shape, size, elastic strain, and relaxations, of metal-assisted etched vertically modulated Si/SiGe superlattice nanowires by using electron microscopy, synchrotron-based x-ray diffraction, and numerical linear elasticity theory. A vertical Si/Ge superlattice with atomically flat interfac...
