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Substrate integrated waveguide. Volume V and surface A, used in power calculations, are shown in this figure.
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Abstract—In this paper, the power dissipated through different loss mechanisms including dielectric, conductor and radiation loss is calculated for the substrate integrated waveguide (SIW) and modified substrate integrated waveguide (MSIW). The applied computational method being appropriate for structures with periodic conducting parts allows one t...
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... the advantages of the rectangular waveguide (RW), such as high Q-factor and high power handling capability in planar form [1][2][3][4][5][6][7]. In the SIW, two periodic rows of plated via-holes are embedded in the substrate. They along with the top and bottom metallic layers of the substrate introduce a structure similar to the common RWs (Fig. ...
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... material, it can be predicted that dielectric loss plays an important role in the total dissipation power. For reduction of dielectric losses in the SIW, a new structure called modified substrate integrated waveguide (MSIW) was introduced in which some part of the dielectric of the substrate between periodic sidewalls has been removed ( Fig. 1) [9]. The manufacturing process of this waveguide is also introduced in [9]. The present work concerns with an exact quantitative analysis of the SIW and MSIW in order to specify the main cause of losses at a given ...
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... which k x = jβ + α denotes the complex propagation constant of the waveguide mode and L is the period of the structure (Fig. 1). Since in the SIW, the height of the substrate (h) is very small in comparison to the distance between periodic metallic walls (a), there are no changes with respect to z for the modes with the lowest cut-off frequencies. So we can reduce our analysis to a two-dimensional one. In the two-dimensional analysis with variations in the x ...
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... the surface resistance of the metal and magnitudes of the electric and the tangential magnetic fields. According to Floquet's theorem and because of the symmetry of the structure, evaluating these integrals can be limited to the one symmetrical half of a period. Radiation losses are evaluated integrating the term 1 2 E × H * on the surface A in Fig. 1. Dielectric and conductor losses are evaluated within the volume V in Fig. 1. By obtaining the expansion coefficients appearing in the equivalent circuit model, the corresponding integrals in each region can be expressed as an algebraic summation of the analytical solutions. In evaluation of some of these integrals Perseval's formula ...
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... tangential magnetic fields. According to Floquet's theorem and because of the symmetry of the structure, evaluating these integrals can be limited to the one symmetrical half of a period. Radiation losses are evaluated integrating the term 1 2 E × H * on the surface A in Fig. 1. Dielectric and conductor losses are evaluated within the volume V in Fig. 1. By obtaining the expansion coefficients appearing in the equivalent circuit model, the corresponding integrals in each region can be expressed as an algebraic summation of the analytical solutions. In evaluation of some of these integrals Perseval's formula can help to simplify the ...
Citations
... The key losses linked to SIW components are associated with three loss mechanisms including conductor loss, dielectric loss, and radiation loss [25][26][27][28]. The conductor loss is linked to the metallic walls limited conductivity; the dielectric loss is linked to the substrate material loss tangent; while the radiation loss is linked to the outflow of EM energy over the regular openings in the dual paths of metallic vias [15,29]. ...
Substrate-integrated waveguide (SIW) is a modern day (21st century) transmission line that has recently been developed. This technology has introduced new possibilities to the design of efficient circuits and components operating in the radio frequency (RF) and microwave frequency spectrum. Microstrip components are very good for low frequency applications but are ineffective at extreme frequencies, and involve rigorous fabrication concessions in the implementation of RF, microwave, and millimeter-wave components. This is due to wavelengths being short at higher frequencies. Waveguide devices, on the other hand, are ideal for higher frequency systems, but are very costly, hard to fabricate, and challenging to integrate with planar components in the neighborhood. SIW connects the gap that existed between conventional air-filled rectangular waveguide and planar transmission line technologies including the microstrip. This study explores the current advance-ments and new opportunities in SIW implementation of RF and microwave devices including filters, multiplexers (diplexers and triplexers), power dividers/combiners, antennas, and sensors for modern communication systems.
... These all are the basic requirement of wireless communication system, so to cover all above advantages, SIW plays the crucial role in the microwave system with easy fabrication topology. The upcoming wireless communication module with SIW technology provides the advancement towards the high reliability, increased performance, good stability and enhanced integration with systems [39]. SIW is the planar form of the rectangular waveguide. ...
... 4. Extended to dual-and tri-band unlicensed frequency applications 5. Extended to implement high-frequency applications, i.e. THz applications [38][39][40][41] ...
The success of any automation system depends upon the many a factors including communication between the nodes and the host, security, reliability, etc. With the advent of IoT, the demand for wireless communication and the need for faster reliable communication grew multifold. While 5G addresses the communication speed requirements, blockchain offers encrypted secure and reliable communication between participating peers. With growing number of transmitters, the system required to maintain portability for the communication systems is getting a challenge. It is becoming a hurdle in the IoT implementation in the sense of small, portable and robust nodes and units. Here, in this chapter, a SIW-based self-multiplexed antenna design integrated with decoupling network working over 5G to overcome these problems is proposed. This technique offers small footprint and compact size and is easily realized with highly demanding IoT systems. The isolation between two antennas is more than −20 dB with stable gain and unidirectional radiation pattern.
... These all are the basic requirement of wireless communication system, so to cover all above advantages, SIW plays the crucial role in the microwave system with easy fabrication topology. The upcoming wireless communication module with SIW technology provides the advancement towards the high reliability, increased performance, good stability and enhanced integration with systems [39]. SIW is the planar form of the rectangular waveguide. ...
... 4. Extended to dual-and tri-band unlicensed frequency applications 5. Extended to implement high-frequency applications, i.e. THz applications [38][39][40][41] ...
... The main losses that exist in SIW devices can be linked to three loss mechanisms that include: conductor loss, dielectric loss, and radiation loss (Bozzi et al., 2008;Ranjkesh and Shahabadi, 2008;Bozzi et al., 2009). The conductor loss (also known as Ohmic loss) is the loss due to the finite conductivity of the metal walls; ...
... The width of an SIW can be calculated from the desired cutoff frequency by analogy with a RW. Substrate Integrated Waveguides are novel transmission lines that implement rectangular waveguides in planar form One of the main problems in the design of GIS components is related to their losses [10]. Because of the similarity between SIW and RW, the two guides have two types of identical losses: Ohmic losses which are related to the conductivity of the metal walls, and dielectric losses which are related to the characteristics of the substrate. ...
... We must study the parameters that characterize the substrate such as the dielectric permittivity ' r ε ', the substrate's thickness 'h' and the tangent loss. According to [10] dielectric losses are the main source of loss, and they are particularly more important than radiation losses and conductor losses. Of course, this classification could be changed when changing the dielectric properties of the substrate and the operating frequency. ...
... The introduction of SIWs in Refs. [18][19][20][21][22][23][24][62][63][64][65][66][67][68][69][70][71][72][73][74] presents the most promising resonant structures with high Q-factor, low-loss, mass-fabrication and integration on a single substrate. This technique allows for a waveguide size reduction with a factor of e 1/2 [75] to the conventional rectangular waveguide. ...
... An enhanced total Q-factor of an SIW circuit requires improved individual Q-factors related to dielectric losses (Q D ) and conductor losses (Q C ). A modified SIW (MSIW) in Ref. [68] uses an air-cut to reduce and increase the dielectric loss, and Q D respectively. However, the proposed structure suffers energy losses due to conductor losses leading to low Q C . ...
This paper reviews microwave on-chip resonators with emphasis on quality-factor (Q-factor), and techniques enhancing Q-factor. The review discusses both planar microstrip and waveguide structures, with the integration of the latter emerging as a substitute for the bulky and expensive non-planar waveguides. Despite their huge Q-factor the conventional waveguide does not support integration and miniaturisation. While the microstrips support miniaturisation and mass fabrication at low-cost, they are limited by low Q-factor due to high conductor and substrate losses. A study of Q-factor enhancing techniques for on-chip devices is presented, with an introduction of integrated waveguide structures. In addition, a summary of transitions between on-chip planar microstrips and planar waveguides is presented.
... Thus, they have a high-quality factor, low insertion loss, high integration ability, and low fabrication cost. Hence, it is considered as an important technology to design a high-performance circuit [1][2][3][4][5][6]. The basic geometry of the SIW circuit consists of a network of metallic cylinders that are embedded in a dielectric substrate layer. ...
This paper proposes an efficient and fast analysis of substrate integrated waveguide (SIW) components using a new approach of the iterative method called WCIP, i.e. “Wave Concept Iterative Process”. This method is based on the iterative resolution of waves between two domains. The first is the spectral domain. We use the Floquet–Bloch decomposition to describe all modes in the spectral domain. The second describes the configuration of the circuit in the spatial domain. It allows taking the exact structure according to the appropriate boundary conditions. This method permits to reduce numerical complexity. The convergence of this approach is always guaranteed. The theoretical suggested study is validated by the simulation of two different examples of SIW circuits. The obtained results are in good agreement with those of measurement and with software HFSS simulations, which prove the advantage of this method.
... Conversely, no equation is available in the literature to determine the attenuation constant due to radiation leakage. Previous works were based on an approximated relation between cylindrical vias and rectangular strips [8], on an implicit approach tailored for leaky wave antennas [9], [10] , or on an applied computational method [11]. However, no direct formula relating the radiation leakage and the SIW geometrical parameters, namely the via diameter , the via spacing , and the SIW width (Fig. 1), has been derived for the normal range of use of SIW interconnects. ...
Substrate integrated waveguide, an emerging technology for microwave and millimeter-wave circuits, is affected by three loss mechanisms: ohmic and dielectric losses, standard waveguides, and radiation leakage. While ohmic and dielectric losses can be accurately determined by the analytical formulas of the equivalent rectangular waveguide, no equations are available for radiation leakage. This paper presents the derivation of a formula to calculate the attenuation constant due to radiation leakage in substrate integrated waveguide interconnects.
... In the Substrate Integrated Waveguide (SIW), two periodic rows of plated via-holes are embedded in the substrate. They along with the top and bottom metallic layers of the substrate introduce a structure similar to the common RWs (Ranjkesh and Shahabadi, 2008). (Ranjkesh and Shahabadi, 2006). ...
... To compare the loss contribution in SIW and MSIW we simulated these two structures with HFSS software for two different substrates. The geometry was the same as one proposed by Ranjkesh and Shahabadi, 2008 : For RO4003C substrate (εr =3.38, tan (δ) =0.0027) a=8 mm, L=2mm and w/a=0.9 and for RT5880 substrate (εr =2.2, tan (δ) =0.0009) a=10mm, L=2.2mm and w/a=0.9. Other parameters were selected as b=c=0.8mm ...
... Attenuation constants of the SIW and MSIW structures on two common substrates(Ranjkesh and Shahabadi, 2008). ...
The study of the ac properties of nano-electronic systems is one of the most discussed topics recently. To understand the high-frequency electronic properties of carbon nanotubes we should understand passive, ac impedance of a 1D quantum system. In this paper we have tried to use CNT in Substrate Integrated Waveguide (SIW) and Modified SIW (MSIW) to decrease the electrical energy loss. For this, firstly some of the basic concepts about nanoscale electromagnetic properties and the qualitative difference in circuit behavior at nanoscale is presented. Secondly the electrical properties of carbon NanoTube and graphene which are the two most technologically advanced examples have been discussed. Thirdly a comparative study of conductive and substrate loss in SIW and MSIW has been conducted for CNT-graphene system and copper system. Thus we have suggested the use of CNT-graphene instead of copper in this substrate. Simulation results with the CST Microwave Studio show 70% reduction in conductive insertion loss and 40% reduction in total insertion loss in SIW. We have also studied the use of graphene and CNT in MSIW; the result of simulation with HFSS software is presented as well.
... The filter has a 3-dB fractional bandwidth of 2%, and the insertion loss in pass band is 3.5 dB. In the proposed filter, the radiation loss cannot be disregarded as in [19]. In fact, the radiation loss plays a leading role in the insertion loss of the filter. ...
Two novel compact substrate integrated waveguide (SIW) band-pass filters are presented in this work. They operate in dual mode at 5.8 GHz with high selectivity of a relative bandwidth of 2% and 5%, respectively. The filter has the dimension of λg × 0.6 λg, which is about 60% of a conventional SIW dual-mode band-pass filter. Simulation and measurements agree well. The empirical design formulae are presented as well.
