Fig 1 - uploaded by Leszek Pyziak
Content may be subject to copyright.
![Structure of silicon crystal in the [001] direction.](profile/Leszek-Pyziak/publication/267830345/figure/fig1/AS:669451485716489@1536621080985/Structure-of-silicon-crystal-in-the-001-direction.png)
Source publication
![Fig. 1. Structure of silicon crystal in the [001] direction.](profile/Leszek-Pyziak/publication/267830345/figure/fig1/AS:669451485716489@1536621080985/Structure-of-silicon-crystal-in-the-001-direction_Q320.jpg)
Fractal analysis was used for the description of the geometry of the clusters formed within the Monte Carlo simulation of the first monolayer growth on Si substrate. Pulse laser deposition method was assumed for the epitaxy. Layers were obtained for various substrate temperatures varying in the range from 600 K to 800 K. The topography of plane clu...
Contexts in source publication
Context 1
... distance d is a distance between a sec- ond near-neighbours in a diamond structure. The struc- ture of silicon crystals in the [001] direction is layered by (001) planes (Fig 1). An atom inside a crystal is sur- rounded by four other atoms, which are covalence bonded with it. ...
Context 2
... rate of layer growth [1]. The average kinetic energy of an atom on a substrate surface E k = 1,5 eV was esti- mated from the thermal sputtering [39,40] processed by YAG: Nd 3+ laser (power density of laser beam 106 W/cm 2 , pulse duration 40 ns, the diameter of laser beam spot 3 mm). The layers obtained consist of one-monolayer flat clus- ters. Fig. 1 presents examples of layers obtained for N = 1000 (1300) and for substrate temperatures 600 K, 730 K and 800 ...
Citations
... This diffusion of Gd atoms may occur by different surface diffusion mechanisms. 47,48 In PLD, the atoms falling on a substrate have a kinetic energy E obtained in evaporation or ablation processes, as shown in eqn (1). Then these atoms diffuse on the substrate surface. ...
We demonstrate a novel, one-step, catalyst-free met
hod for the production of size-controlled vertical
highly conductive
ZnO NR arrays with highly desirable characteristics
by pulsed laser deposition using a Gd-doped ZnO ta
rget. Our study
shows that an
in situ
transparent and conductive Gd nanolayer (with a un
iform thickness of ~1 nm) at the interface
between a lattice-matched (11-20)
a
-sapphire substrate and ZnO is formed during the de
position. This nanolayer
significantly induces relaxation mechanism that con
trols the dislocation distribution along the growth
direction; which
consequently improves the formation of homogeneous
vertically aligned ZnO NRs. We demonstrate that bot
h the lattice
orientation of the substrate and the Gd characteris
tics are important in enhancing the NR synthesis, a
nd we report precise
control of the NR density by changing the oxygen pa
rtial pressure. We show that these NRs possess high
optical and
electrical quality, with a mobility of 177 cm
2
(V.s)
-1
, which is comparable to the best-reported mobility
of ZnO NRs.
Therefore, this new and simple method has significa
nt potential for improving the performance of mater
ials used in a wide
range of electronic and optoelectronic applications
.
