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Standard 'H-pattern' solar cell.

Standard 'H-pattern' solar cell.

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Laser processing is becoming an increasingly important production tool in the manufacturing of photovoltaic (PV) solar cells and modules, with huge potential to enable new technology genera-tions in the near future. In this contribution, examples of next generation crystalline silicon and thin-film PV devices that are developed by ECN will be prese...

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... conventional 'first generation' crystalline Silicon so- lar cell is sketched in Figure 1. It is basically a planar diode consisting of a p-doped silicon wafer with a negatively doped area at the top from where the sunlight enters, and a positively doped area at the rear. ...
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... the following, we focus on the results obtained with the 1064 nm laser. Excellent P1 and P2 scribes of the complete stack, including ITO deposited on the (amorph- ous) silicon, were obtained as shown in Figure 10 It has to be mentioned that also with this laser, the process window especially for the P2 scribe is quite narrow, as can be deduced from ablation threshold experiments similar to those presented for the 355 nm laser above. Fig- ure 12 shows the ablation diameters of only the back con- tact as function of the pulse energy, together with the di- ameters obtained on the 'full stack' samples for the two different ablation depths representing the P1 and P2 scribes. ...
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... P1 and P2 scribes of the complete stack, including ITO deposited on the (amorph- ous) silicon, were obtained as shown in Figure 10 It has to be mentioned that also with this laser, the process window especially for the P2 scribe is quite narrow, as can be deduced from ablation threshold experiments similar to those presented for the 355 nm laser above. Fig- ure 12 shows the ablation diameters of only the back con- tact as function of the pulse energy, together with the di- ameters obtained on the 'full stack' samples for the two different ablation depths representing the P1 and P2 scribes. Also here, the risk of damaging the back contact during P2 scribing cannot be eliminated. ...
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... here, the risk of damaging the back contact during P2 scribing cannot be eliminated. When judging the quality of the obtained scribe lines presented in Figure 10 and Figure 11, an important obser- vation is that the SiO x layer still has a very flat surface after laser scribing of P1, indicating that there is no significant damage to this layer. This is confirmed by a closer analysis of the confocal microscopy results presented in Figure 13. ...
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... here, the risk of damaging the back contact during P2 scribing cannot be eliminated. When judging the quality of the obtained scribe lines presented in Figure 10 and Figure 11, an important obser- vation is that the SiO x layer still has a very flat surface after laser scribing of P1, indicating that there is no significant damage to this layer. This is confirmed by a closer analysis of the confocal microscopy results presented in Figure 13. ...
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... judging the quality of the obtained scribe lines presented in Figure 10 and Figure 11, an important obser- vation is that the SiO x layer still has a very flat surface after laser scribing of P1, indicating that there is no significant damage to this layer. This is confirmed by a closer analysis of the confocal microscopy results presented in Figure 13. The confocal microscope actually finds a strong signal for all reflecting interfaces that are present in the stack dur- ing the measurement. ...

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Selective laser ablation of dielectric layers on crystalline silicon wafers was investigated for solar cell fabrication. Laser processing was performed on Al2O3, and bi-layers Al2O3/SiNX:H with a nanosecond UV laser at various energy densities ranging from 0.4 to 2 J cm−2. Ablation threshold was correlated to the simulated temperature at the interf...

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... In order to reduce these losses, new concepts are being developed with additional objectives of providing contacts for thinner wafers. This objective is aimed at: reducing material cost, ensuring low-stress interconnection between cells and enabling the ease of modules manufacture [19]. Another key challenge of conventional interconnection technology is shadowing losses. ...