Fig 6 - uploaded by Mamun Bin Ibne Reaz
Content may be subject to copyright.
Simulation results of voltage gain versus frequency with difference supply voltage  

Simulation results of voltage gain versus frequency with difference supply voltage  

Source publication
Article
Full-text available
Low Noise Amplifier (LNA) is one of the essential components in Ultra Wideband (UWB) devices. Conventional LNA suffers from large chip area, high power consumption and inadequate Noise Figure (NF). A compact UWB LNA in the bandwidth of 3.1 to 10.6 GHz is proposed. The design is based on inductor-less configuration using the resistive shunt feedback...

Context in source publication

Context 1
... the simulation, four different supply voltages have been used to examine the voltage gain of the proposed UWB LNA. Figure 6 shows that the voltage gain increases with the increment of supply voltage but utilization of high supply voltage will increase the power consumption of the device. Table 2 represents the relationship of the supply voltage and power consumption that has been simulated. ...

Similar publications

Article
Full-text available
In this paper, an ultra wide band (UWB) low noise amplifier (LNA) circuit with a new input stage is proposed. In this scheme, a combination of coupled inductors in the input stage is utilized. The input stage is able to easily reject out-band interference. This input stage is applied in an LNA with 0.18 μm technology. The LNA has a peak gain of 21....
Conference Paper
Full-text available
In this paper, we present a radio frequency (RF) front-end design for increasing robustness of non-coherent energy detection based impulse radio (IR) ultra-wideband (UWB) receivers in impulsive noise environment. Robustness against impulsive noise is achieved by on chip LNA-bandpass filter (BPF) circuit, which also works as a clipper for high energ...
Article
Full-text available
An ultra-wideband (UWB) active true time-delay circuit with a differential tunable active inductor for LC-tank is presented and fabricated in a 0.18 μm CMOS process. The proposed delay circuit consists of a transistor, a differential active inductor (DAI), a resistor and a load, which can be approximated by a second-order all-pass filter as the bas...
Article
Full-text available
In this letter, a 3‐13 GHz UWB low noise amplifier (LNA) with high power gain is reported using a standard 130‐nm CMOS. In the first stage, Q‐enhanced inductors are proposed by using an in‐phase current returning path (CRP) technique. Compared to traditional ground ring CRP and anti‐phase CRP, the quality factor of the inductor is improved by decre...
Conference Paper
Full-text available
This paper presents the design of a low noise amplifier (LNA) for the ultra wideband (UWB) signals which lies in the frequency range 3.1–10.6 GHz. This method uses resistive feedback gain enhanced noise cancelling technique. It is an inductor less LNA design which consumes less power and improves the noise Fig. By using this technique, we achieve a...