Simulated device structures of type A and B OLEDs. The grating attenuation shown in Figure 1 is taken into account in the model. The air and glass layer thicknesses are not to scale. Their thickness in the simulation is 1 μm to keep the perfectly matched layers (PMLs) at a distance from the near fields around the nanostructures. The plane wave sources necessary for the reciprocity‐based simulation are placed a few mesh cells above the bottom PML. 2D field monitors are placed on the F8BT/MEH‐PPV layers.

Simulated device structures of type A and B OLEDs. The grating attenuation shown in Figure 1 is taken into account in the model. The air and glass layer thicknesses are not to scale. Their thickness in the simulation is 1 μm to keep the perfectly matched layers (PMLs) at a distance from the near fields around the nanostructures. The plane wave sources necessary for the reciprocity‐based simulation are placed a few mesh cells above the bottom PML. 2D field monitors are placed on the F8BT/MEH‐PPV layers.

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