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![Simscape simulation setup for GFET device simulation. After [2].](profile/Saraju-Mohanty/publication/301312992/figure/fig2/AS:667842181607425@1536237392019/Simscape-simulation-setup-for-GFET-device-simulation-After-2.png)
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![Fig. 2 Simscape simulation setup for GFET device simulation. After [2].](profile/Saraju-Mohanty/publication/301312992/figure/fig2/AS:667842181607425@1536237392019/Simscape-simulation-setup-for-GFET-device-simulation-After-2_Q320.jpg)
SPICE has been the corner stone of integrated circuit simulation since the 1970s. The device-level options that are available for SPICE/analog simulators to simulate a circuit netlist are typically compact models and/or Verilog-A structural and behavioral models. Though these simulations are very accurate, for large and complex circuits/systems the...
Citations
... To the best of our knowledge, it is the first oscillator that can be operated as a voltage-controlled oscillator (VCO) as well as a pulse-width modulator (PWM). Moreover, other types of [14], [19]. ...
... oscillators based on GFET have also been introduced, namely ring oscillators [14]- [17], and LC oscillators [19], [20]. ...
... With the MSO, the LC oscillator oscillates at 2.58 GHz. In the following year, another GFET-based LC oscillator was introduced [19]. The LC oscillator was designed with four GFETs, and its structure is shown in Figure 3 (b). ...
Graphene has been extensively investigated in the context of electronic components due to its attractive properties, such as high carrier mobility and saturation velocity. In the past decade, the graphene field-effect transistor (GFET) has been considered one of the potential devices to be used in future radio frequency (RF) applications and can help usher in the Internet of Things and the 5G communication network. This review presents recent developments of GFETs in RF applications with a focus on components such as amplifiers, frequency multipliers, phase shifters, mixers, and oscillators. Initially, the figures of merit (FoMs) for the GFET are briefly described to understand how they affect these RF components. Subsequently, the FoMs of GFET-based RF components are compared with other non-GFET-based RF components. It is found that, due to its zero-band gap and ambipolar characteristics, GFETs are more suitable for use in frequency multiplier and phase shifter applications, outperforming non-GFET-based RF components. Finally, future research on GFETs themselves as well as GFET-based RF components is recommended. This review provides valuable insights into such components that could give rise to innovative applications in industry.
... Based on this model, the system responses can be evaluated assisting control adjustment. Simscape-based physical modeling has been used successfully in many different fields: PV generators in microgrid scenario [7], graphene based nano-electronic systems [8], power PIN diodes [9], wind turbine gearboxs [10], DC motors [11], 3-wheeled electric vehicles [12], and so on. For robot manipulators, several researches using this approach are presented, e.g., Furuta pendulums [13], hexapod robots [14], 3-RPS parallel robotics [15], 2-DOF robots [16], 5-DOF robotic manipulators [17], and successfully simulating a complicated mechanical system [18]. ...
... Along with these, to make future electronic gadgets littler, more astute, and computationally productive, it has gotten critical to settle on substitute appliance substances or substitute application approaches. Fin Field Effect Transistor (FinFET), graphene Field Effect Transistor (GFET) [4][5][6], graphene nanoribbon Field Effect Transistor (GNRFET), carbon nanotube (CNT) [7,8] and Si-nanowire Field Effect Transistor are the substituent segments which have been completely well-considered as an imminent substitute for COS-MOS innovation. In this paper, CNT technology is used because of their utmost small unit area (about 2nm), extreme accomplishment in terms of speed, and energy competency. ...
At around 10nm, direct source to drain tunneling in COS-MOS technology constituting fundamental limitations that in turn hold back their suitability for modern electronic appliances chiefly as far as area, energy competency and performance. In advanced electronic appliances, memory constituents play a crucial part. Almost in every digital appliance, memory component is mostly preferred due to its unique potentiality to withhold information. Due to rapid technology advancements, architecture of SRAM is truly tested as far as delay, energy efficiency and stability. Traditional 6T memory unit experiences passage transistor conflict arises the contrast among read balance and write competence. The paper that proposed here contrasts the performance of distinctive CNTFET based 8T memory unit architectures like Traditional and Dual-Port with respect to write delay, read delay and power efficiency like static and dynamic. 8T SRAM bit cell is designed with 32nm CNTFET technology using HSPICE Tool. From the HSPICE simulation results, Dual-Port CNTFET SRAM has provide better read and write delays were reduced by ~8.8% and ~16.3%, static power and dynamic power by ~12.5% and ~42.2% respectively than conventional one.
... Simulink R has been used as the modeling and simulation framework due to its obvious advantages including availability of a good library for system modeling [7]. The first step was to determine the various devices and components and ensure specifications are met. ...
... Graphene-based devices have been recently proposed and can work under a very low power supply with much higher mobility than the widely used silicon devices [1,2,3]. However, the property of zero bandgap is a major problem blocking graphene to be integrated in current digital IC design [4]. ...
... Thus to make future electronic devices smaller, smarter, and computationally efficient, it has become very important to opt for alternative device materials or alternative device concepts. As a result, various alternate building materials like FinFETs, graphene FET (GFET) [1][2][3], graphene nanoribbon FET (GNRFET), carbon nanotube (CNT) [4,5], and Si-nanowire FET have been extensively studied as a future replacement for CMOS technology. Carbon nanotube has been considered in this paper due to its extremely low feature size (around 2 nm), high performance in terms of speed, and power consumption. ...
CMOS technology below 10 nm faces fundamental limits which restricts its applicability for future electronic application mainly in terms of size, power consumption, and speed. In digital electronics, memory components play a very significant role. SRAM, due to its unique ability to retain data, is one of the most popular memory elements used in most of the digital devices. With aggressive technology scaling, the design of SRAM is seriously challenged in terms of delay, noise margin, and stability. This paper compares the performance of various CNTFET based SRAM cell topologies like 6T, 7T, 8T, 9T, and 10T cell with respect to static noise margin (SNM), write margin (WM), read delay, and power consumption. To consider the nonidealities of CNTFET, variations in tube diameter and effect of metallic tubes are considered for various structures with respect to various performance metrics like SNM, WM, read delay, and power consumption.
Due to the distinctive ability of retaining the data, SRAM is the most prominent memory element used in many electronic devices. The fundamental limits faced by the CMOS technology below 10nm, restricts its relevancy in terms of power consumption, size and speed. Therefore considerable concentration is focused on an alternate technology i.e CNTFET especially for low power designs. This paper mainly focuses on the comparative analysis of different CNTFET based SRAM cells like 6T, 7T, 8T, 9T and 10T. The comparison is done with respect to Power consumption, delay and Noise Margin.
Günümüz endüstrileriyel otomasyon sistemlerinde, güç ve süreklilik gerektiren görevler için genellikle robotik kollar tercih edilmektedir. Bu robot kolların çok geniş bir kullanım alanları vardır. Robot kolların kullanım alanlarından biride nesneleri bir noktadan almak ve istenen konuma yerleştirmektir. Robot kolun yapısı, bağlantılar ve eklemlerle birbirine bağlanan birçok elemandan oluşur. Bu kolların tasarımı, serbestlik dereceleri, torklar ve hareket denklemleri gibi birçok faktörün bilgisini içerir. Robot kolun istenilen konumlara gidebilmesi, hareketleri yapabilmesi için ilk olarak kinematik denklemlerinin oluşturulması ve bu denklemlere göre programlanması gerekmektedir. Bu çalışmada, kolun belirli bir konumuna hareket ettirmek için MATLAB 3 serbestlik dereceli (DOF) bir scara tip robot kolu modelleyeceğiz. Bu kolda kullanılan aktüatörler step motorlardır. Bu 3-DOF robot kolun ana girdileri, uç efektörlerin x, y ve z konumunu verecek olan aktüatörlere yönelik tork açılarıdır. Bu tork açı girişi için üzerlerine monte edilmiş ivmeölçerlerden kolun eklemlerinin ivmesini algılayabiliriz. Fiziksel sensörden gelen ivme daha sonra otomatik bir şekilde sayısal integralleri alınarak hız ve konum verilerine dönüştürülmektedir. Bu sayede tasarımı gerçekleştirilmiş bir robot kolun hızlı bir şekilde simülasyon ortamında modellenmesi ve yarı gerçek zamanlı gözlemlenmesi mümkündür.
