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In this work, the performance of floating active inductor is studied using 130 nm BiCMOS technology. A new design of floating type active inductor based on gyrator-C topology using MOSFETs and npn SiGe HBTs has been proposed. The quality factor, power consumption, noise figure, S11 and inductance value of the proposed design have been obtained and...
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Citations
... The details of the mathematical derivation of the inductance value and quality factor of the active inductor are discussed in [22]. A floating type active inductor is reported in [16] using similar methodology uses large number of transistors. The work is explored for the grounded active inductor, which can be analyzed using the small signal model given in [22]. ...
In this work, performance of conventional gyrator-C based active inductor is studied and two designs of single-ended active inductors based on modified gyrator-C topology employing SiGe HBTs are proposed using 130 nm BiCMOS technology which provides high quality factor with low-power consumption. The performance in terms of inductive bandwidth, S11, noise figure, quality factor and power consumption have been compared and the tradeoff between performance parameters are discussed. In the proposed work, first design of active inductor produces high value of inductive bandwidth (271 MHz–3.7 GHz) with moderate value of quality factor (437), whereas second design produces moderate range of inductive bandwidth (182 MHz–2.3 GHz) with high quality factor (6014). The proposed active inductors are used in second order LC band pass filter and the performance metrics of filter in terms of 1 dB compression point (− 18.88 and − 18.55), IIP3 (− 14.68 and − 9.02) and passband gain is investigated. The study suggests that proposed designs of active inductors are suitable candidate for high performance, low power RF applications with nearly 1 GHz bandwidth.
... This design method addresses the issues associated with intrinsic quality factor and dynamic range of CMOS AI. LC BPF using floating AI in 130 nm BiCMOS technology has been communicated in [14]. This design shows that HBTs based AI attaining higher inductive bandwidth and feedback resistor enhances the quality factor. ...
... Lossy floating gyrator-C topology with double resistive feedback has been used for the implementation. Floating AI is preferred as it obtains twice the voltage swing as compared to grounded AI [14]. In the proposed floating AI, differential amplifier with current mirror load acts as positive transconductance (G m ) while the transconductor with negative transconductance (-G m ) is common source (CS) amplifier. ...
It has been a challenging task for the designers to implement on-chip bandpass filter at high frequency with better performance. In this paper, a tunable RF bandpass filter using double resistive feedback floating active inductor (AI) based on gyrator-C topology has been proposed using 40 nm CMOS technology for 5 GHz WLAN applications. Small signal analytical modelling determines the design parameters affecting the performance of proposed floating AI, which ascertains that the double resistive feedback increases the quality factor as well as inductance value. The proposed AI attains a maximum quality factor of 964, high inductance ranging from 420 to 2080 nH and wide inductive bandwidth varying from 550 MHz to 7.85 GHz. Total current drawn by the AI is 2.66 mA at 1.2 V power supply and occupies an area of 17.1 × 9.1 µm2. In order to validate the performance of AI, a second-order tunable bandpass filter with frequency range 5.15–5.35 GHz has been implemented, with a small fractional 3-dB bandwidth, quality factor and 1-dB compression point of 15 MHz, 346 and − 2.8 dBm respectively. The Bandpass filter attains the figure of merit of 92.16 dB and dynamic range of 150 dB-Hz.
... Consequently, even rapid advancements in integrated circuit technologies cannot keep the passive inductors in the preferred list of RFIC designers. The perception of the active inductor is a consequence of the gyrator model [14,15] as shown in Fig.2. It is a two-port circuitry which is composed of a pair of transconductors interconnected in negative feedback. ...
... Consequently, even rapid advancements in integrated circuit technologies cannot keep the passive inductors in the preferred list of RFIC designers. The concept of the active inductor is a consequence of the gyrator-capacitor model [18][19] as shown in Fig. 2. The gyrator is a two-port circuitry which is composed of a pair of transconductors interconnected in negative feedback in order to reproduce the inductor transfer function. The transconductors designed with NMOSs results in the simple active inductor circuit [19]. ...
The incompatibility between current RFID standards has led to the need for universal and Wi-Fi compatible RFID for IoT applications. Such a universal RFID requires an SPDT and an LNA to direct and amplify the received raw signal by the antenna. The SPDT suffers from low isolation, high insertion loss and low power handling capacity whereas the LNA suffers from bulky die area, lesser Q factor, limited tuning flexibility etc. because of passive inductor usage in current generation of devices. In this research, nano-CMOS inductorless SPDT and LNA designs are proposed. The SPDT adopts a series-shunt topology along with parallel resonant circuits and resistive body floating in order to achieve improved insertion loss and isolation performance whereas the LNA design is implemented with the gyrator concept in which the frequency selective tank circuit is formed with an active inductor accompanied by the buffer circuits. The post-layout simulation results, utilizing 90nm CMOS process of cadence virtuoso, exhibit that our SPDT design accomplishes 0.83dB insertion loss, a 45.3dB isolation, and a 11.3dBm power-handling capacity whereas the LNA achieves a peak gain of 33dB, bandwidth of 30MHz and NF of 6.6dB at 2.45GHz center frequency. Both the SPDT and LNA have very compact layout which are 0.003mm2 and 127.7 μm2, respectively. Such SPDT and LNA design will boost the widespread adaptation of Wi-Fi-compatible IoT RFID technology.
... For this behaviour, they are used in the design of bandpass filters (BPFs). A BPF for IF-Receiver architecture is proposed in [12] whereas [13] uses a voltage differentiating transconductance amplifier for high frequency BPF design. For multi band, multimode applications BPF using inductorless bi-quads is proposed [14] and [15] uses the varactors in the design of AI to tune the parasitic capacitances of the BPF. ...
This paper presents the design of a bandpass filter using a CMOS floating active inductor with a quality factor of 14.7. By tuning the biasing current in the circuit we can tune the quality factor and the resonant frequency of the floating active inductor as well as bandpass filter. The power consumption of the bandpass filter is 3.72 mW with a supply voltage of 1.8 V. The 1 dB compression point and IIP3 are 26.3 dBm and 27.6 dBm respectively. The centre frequency of the filter is 635 MHz with a bandwidth of 8 MHz which can be used in the broadcasting applications. The noise figure of the filter is 0.16 dB. The filter is designed in UMC 180 nm mixed mode CMOS process.
... Fig.7 shows the layout which has 0.301mm 2 area. The area can be further minimized using active inductor in place of passive spiral inductor in the design [12]. ...
... The level of integration of modern transceivers, for different applications such as Radio Frequency Identification (RFID), Bluetooth, ZigBee and wi-fi devices, medical instruments, sensors, etc., has been extending in the recent years resulting in the compact as well as low-cost wireless communication devices by eliminating many bulky components. Continuous downscaling of the Complementary Metal Oxide Semiconductor (CMOS) technology makes it easy for the Integrated Circuits (IC) and System on Chip (SOC) designers [1][2][3][4][5]. As a result, the size and the price of the wireless devices are becoming less day by day. ...
Background: All modern transceiver circuits utilize high-performance band pass filters for proper frequency selection led the researchers to inaugurate the journey of CMOS active inductor. The prime performance requirements of such circuits are very low power dissipation, relatively higher Q-factor with fixed center frequency tuning but a tradeoff among these parameters is inevitable. Method: A number of active inductor-based band pass filters have been designed over the years to obtain better performance trade-offs and a discussion on these designs is presented from their advantages, disadvantages and application point of view. The active inductors are capable of working effectively in band pass filters at very high frequencies up to 11.47 GHz and can be designed to achieve smallest chip area as low as 0.005 mm². Besides some essential critical parameters such as high-quality factor, narrow bandwidth, central frequency tuning, low voltage operation, very small power consumption etc. are also achievable. Moreover, compared to Gm-C and Q-enhanced LC tank band pass filters, filters with active inductor show better performance in terms of low power consumption, small silicon area, high Q factor and tunability. Conclusion: This review will help the engineers in designing compact and high-performance CMOS band-pass filter circuits for various RF devices.
In this research work, a low-power grounded active inductor based on gyrator-C topology is proposed. The simulation results of the proposed active inductor show maximum quality factor of 341 at 2.51 GHz. The inductive bandwidth of the circuit is obtained as 0.79–2.69 GHz. The designed active inductor provides the inductance value of as high as 180 nH which makes it suitable for a wide range of applications. The circuit shows good performance in all aspects while consuming only 0.99 mW of DC power. The circuit also shows very good noise performance compared to reported works in the literature.
