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Schematic structure diagrams of samples grown on three different MnSb virtual substrates: (a) GaAs(111), (b) InGaAs(111), and (c) GaAs(001)
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![Figure 3: Diffraction features near the position along the [01L]...](publication/310466771/figure/fig1/AS:429785575890952@1479480274327/Diffraction-features-near-the-position-along-the-01L-GaAs111-CTR-for_Q320.jpg)
![Figure 4: Diffraction features near the position along the [01L]...](publication/310466771/figure/fig2/AS:429791385001985@1479481659249/Diffraction-features-near-the-position-along-the-01L-GaAs111-CTR-for-MnSb0001_Q320.jpg)
We have investigated the growth by molecular beam epitaxy (MBE) of GaAs on MnSb. MnSb epilayers on GaAs(111), GaAs(001) and of thickness 50 nm were used as substrates for GaAs films. The MBE growth of GaAs was monitored in situ using synchrotron X‐ray diffraction and reflection high energy electron diffraction. We show data on strain relaxation and...
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... Both of these orientations, in fact, appear in this work and depend on sample growth conditions. Oblique orientations with larger minimum common interface areas have been observed for hexagonal-on-cubic epitaxy such as MnAs/GaAs(001) [42] and MnSb/GaAs(001) [43], but consideration of bulk symmetry and dangling bond orientation do not favor such oblique epitaxy in the present case. Other substrates may be useful, such as Si (effective mismatch 7.7%) or SrTiO 2 (10.5%). ...
InBi is a topological nodal line semimetal with strong spin–orbit coupling. It is epitaxially compatible with III-V semiconductors and, hence, an attractive material for topological spintronics. However, growth by molecular beam epitaxy (MBE) is challenging owing to the low melting point of InBi and the tendency to form droplets. We investigate approaches for epitaxial growth of InBi films on InSb(001) substrates using MBE and periodic supply epitaxy (PSE). It was not possible to achieve planar, stoichiometric InBi heteroepitaxy using MBE growth over the parameter space explored. However, pseudomorphic growth of ultra-thin InBi(001) layers could be achieved by PSE on InSb(001). A remarkable change to the in-plane epitaxial orientation is observed.
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Manganese pnictides MnP, MnAs, and MnSb are ferromagnetic semimetals and have some unique properties, namely, high Curie points, considerable magnetic anisotropy, and giant magnetocaloric effect. Experimental and theoretical studies showed that these compounds can enter a superconducting state under high external pressures. Manganese pnictides are widely used in design of hybrid structures, such as spin diodes and transistors, in combination with semiconductors. The survey focuses on the design and properties of such the structures.
A “hybrid” surface growth mode is studied by in situ scanning tunneling microscopy and ex situ synchrotron X‐ray diffraction. Heteroepitaxial growth of MnSb(0001) on GaAs(111) leads to the direct formation of islands, but the islands themselves grow in a local layer‐by‐layer fashion, having low aspect ratio and flat tops. Strained and relaxed islands co‐exist prior to island coalescence, confirming that dislocation formation occurs locally over a range of average film thicknesses. An epitaxial growth mode is studied which combines incomplete wetting of the substrate with locally planar layer‐by‐layer growth. MnSb(0001) grown by molecular beam epitaxy on GaAs(111) forms flat‐topped islands with low aspect ratio. Misfit dislocation density increases steadily with fully strained and partly relaxed islands coexisting.
