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Schematic representation of band-gap formation (adapted from 

Schematic representation of band-gap formation (adapted from 

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At present, carbon dioxide (CO2) is the largest contributor among greenhouse gases. This article addresses the potential application of photocatalysis to the reduction of CO2 emissions from industrial flue gas streams. Not only does this process remove CO2, but it can also convert CO2 into other chemical commodities such as methane, methanol, and e...

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... makes use of semiconductors to promote reactions in the presence of light radiation. 8 Unlike metals, which have a continuum of electronic states, semiconductors exhibit a void energy region, or band gap, that extends from the top of the filled valance band to the bottom of the vacant conduction band when exposed to light radiation (Figure 1). The generation of electron-hole pairs (e --h + ) and its reverse process are shown in eqs 1 and 2, respectively where hV is the photon energy, e -represents a conduction band electron, and h + represents a hole in the valence band. ...
Context 2
... the past decade, low-cost supported catalysts consisting of photoactive materials that deposit on transparent and inert bodies have been developed significantly. This improves not only the surface area of the fixed-bed reactor design but also the UV light penetration (Figure 10). 87,88 The proposed design is a bubble-flow fixed-bed column that is cylindrical and contains a bed of catalytic particles and a coaxial UV-lamp radiation source. ...
Context 3
... addition to the above reactors, a new photoelectrochemical cell has been designed that integrates three techniques: pho- tochemical, electrochemical, and membrane processes ( Figure 11). One half-cell of this reactor is a proton anode that splits water into one proton (H + ) plus diatomic oxygen and consists of sol-gel-deposited TiO 2 coated on a Ti metal substrate. ...

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... As well as in FT-IR analysis, the catalysts selected were the ones prepared with the HA/P ratio of 30 mol/mol for TDB, TIP, TBO, and TEO. Subsequently, from the spectra obtained, the absorption thresholds (λ lim ) were estimated, and the band gap energies were calculated as usual [2,27,53]. The results presented in Figure 10 show that the catalysts have absorption thresholds between 400 and 420 nm for all the precursors; however, the maximum values vary as follows: TIP > TDB = TBO > TEO. ...
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Nonmetallic co-doping and surface hole construction are simple and efficient strategies for improving the photocatalytic activity and regulating the electronic structure of g-C3N4. Here, the g-C3N4 catalysts with B-F or B-S co-doping combined with nitrogen vacancies (Nv) are designed. Compared to the pristine g-C3N4, the direction of the excited electron orbit for the B-F-co-doped system is more matching (N2pz→C2pz), facilitating the separation of electrons and holes. Simultaneously, the introduced nitrogen vacancy can further reduce the bandgap by generating impurity states, thus improving the utilization rate of visible light. The doped S atoms can also narrow the bandgap of the B-S-Nv-co-doped g-C3N4, which originates from the p-orbital hybridization between C, N, and S atoms, and the impurity states are generated by the introduction of N vacancies. The doping of B-F-Nv and B-S-Nv exhibits a better CO2 reduction activity with a reduced barrier for the rate-determining step of around 0.2 eV compared to g-C3N4. By changing F to S, the origin of the rate-determining step varies from *CO2→*COOH to *HCHO→*OCH3, which eventually leads to different products of CH3OH and CH4, respectively.