Schematic of preparing the n-Si/PEDOT:PSS solar cells with (a-f) Ag grid electrodes or (a-e, g) silver nanowires electrodes 

Schematic of preparing the n-Si/PEDOT:PSS solar cells with (a-f) Ag grid electrodes or (a-e, g) silver nanowires electrodes 

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Hybrid heterojunction solar cells (HHSCs) have gained extensive research and attention due to simple device structure and low-cost technological processes. Here, HHSCs are presented based on a highly transparent conductive polymer poly(3,4ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS) directly spin-coated on an n-type crystalline silicon...

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... For solar cell fabrication, the n-type c-Si wafer is used as the absorber and the p-type PEDOT:PSS is used as the emitter layer [8]. In this work, PED-OT:PSS is mixed with Triton X-100 and ethylene glycol (EG) before spin coating process [9]. ...
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PEDOT:PSS is a promising candidate as a p-type emitter to form a heterojunction solar cell on monocrystalline silicon (mono c-Si). This is due to its high conductivity, high transparency, effectiveness as an anti-reflective coating (ARC), besides being capable of low-temperature processing. This paper investigates optical, surface morphological and electrical properties of p-type PEDOT:PSS emitter on n-type textured mono c-Si for solar cell application. The mono c-Si wafers are textured using sodium hydroxide (NaOH) solution to form random upright pyramids on the surface. Then, PEDOT:PSS emitter is spin-coated on the textured wafers with varying coating speeds (250–1000 rpm) to form different thicknesses of the emitter layer. The PEDOT:PSS on textured wafer reduces the weighted average reflection (WAR) to 4.91% when compared to 17.87% for the textured wafer alone. In the solar cell, the optimized PEDOT:PSS emitter on the textured wafer demonstrates improved short-circuit current density (Jsc), open-circuit voltage (Voc) and power conversion efficiency (PCE) when compared to the PEDOT:PSS emitter on the reference planar wafer. The highest PCE of 5.53% is achieved for the optimized PEDOT:PSS emitter on the textured solar cell. The results demonstrate that PEDOT:PSS is a promising heterojunction emitter and ARC for the textured mono c-Si solar cell.
... Thanks to its significant reflectance, flat Si surfaces have a high absorption loss of 30-40% in the visible range. 136 To improve light trapping, silicon substrates were designed with various nano and micro-textured structures such as pyramid texture, [137][138][139][140][141][142] nanowires, 143,144 nanopillars, 145,146 and, a porous surface. 147,148 The utilization of Si nano-or micro-textured can significantly improve light trapping ability due to the powerful light-collecting effect that stifles the reflection of the junction area in the visible and near-infrared range and enhances the light-collecting efficiency. ...
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Graphene has attracted considerable attention due to its unique physical and chemical properties. Thanks to its atomic thickness, high carrier mobility, and transparency, graphene is the best electrode material for a wide range of optoelectronic devices such as solar cells, light-emitting diodes, and photodetectors. Improvement of graphene/silicon (Gr/Si) solar cells has gained significant research interest in the field of semiconductor devices. Herein, a comprehensive review of Gr/Si solar cells is provided with a detailed introduction of the structure, mechanism, and fundamental physics of Gr/Si solar cells. Then, various key strategies to improve the performance of the solar cells are summarized. The article concludes with the goals and direction for future works on graphene-based solar cells.
... These requirements make the optimization of the inorganic frontal interface a challenging technological task that involves surface engineering with different approaches in materials [22] and designs [23]. For this reason, recently, organic materials in hybrid n/i and i/p heterojunctions have been proposed as a solution to simplify the fabrication of the frontal interface by reducing high temperature and vacuum stages due to their solution-type deposition process [14,24], and this proposal can also be extended to other devices technologies. Fig. 2 c-d show the SIMS profiles of the SH structure, in which the ptype silicon layer is substituted by the PEDOT:PSS layer in the frontal interface, while the back interface is fabricated like the reference sample. ...
Article
In this work, we study doping-free hybrid heterojunction interfaces based on silicon, poly(3,4-ethylene dioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS) and conjugated polyelectrolyte poly [(9,9-bis(3′-(N, N-dimethylamino) propyl)-2,7-fluorene)-alt-2,7-(9,9–dioctylfluorene) (PFN). For this, three types of hybrid structures were fabricated: a single hybrid structure (ITO/PEDOT:PSS/Si–C:H (buffer)/(i) a-Si:H/(n) a-Si:H/Ag), a double hybrid structure (ITO/PEDOT:PSS/Si–C:H (buffer)/(i) a-Si:H/PFN/Al) and an inorganic a-Si:H-based structure reference. The compositional and interface characteristics were studied by secondary ion mass spectroscopy and atomic force microscopy demonstrating a good definition of the PFN and PEDOT:PSS polymer layers through the hybrid structures. However, the PEDOT:PSS/ITO interfaces show degradation with the diffusion of Sn and In into the polymer layer. Finally, to characterize the optical and electrical properties of the heterojunctions, the photovoltaic response of the structures was measured and compared with optical simulations. Good agreement between experimental and simulation results demonstrated the reliability of the deposition process of the organic layers and validates the optical model to describe and optimize the hybrid heterojunctions.
... The overall increase in the conductivity of the PEDOT:PSS film can be ascribed to different factors such as; increase in the π-π stacking, decreased distance between π-π planes, transformation of PEDOT from benzenoid to quinoid structure, the reduction in the particle size of the PEDOT:PSS molecule, increased carrier concentration and removal of PSS from the film [17,20,24]. Introduction of reduced graphene oxide [26][27][28][29] and nanowires [30][31][32] to the PEDOT:PSS also helps in increasing the conductivity by providing additional less resistive paths for the flow of carriers. The wettability of the PEDOT:PSS solution to the silicon surface can be increased by adding surfactants like Triton 100X, fluorosurfactant, etc [4]. ...
... Researchers have utilized different methodologies and engineering to enhance the efficiency of the PEDOT:PSS/n-Si solar cells [23]. One approach attempts to enhance the PEDOT:PSS conductivity and the work function [12,20,21,[24][25][26][27][28][29][30][32][33][34][35]. Another approach focuses on the surface engineering of silicon to increase the light absorption as well as to enhance the passivation quality to effectively increase the carrier collection by reducing the recombination at the interface [4,5,[36][37][38][39][40][41][42][43]. ...
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Good conductivity and transparency in the visible spectrum along with low processing temperatures and ease of fabrication make Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) a widely accepted polymer for organic-inorganic hybrid heterojunction solar cells. Although the overall conductivity of the PEDOT:PSS is high, the PSS segregates more at the surfaces of the deposited film. This leads to high contact resistivity of PEDOT:PSS film with metal and silicon. In this report, we explore the effect of the spin coating rates on the contact resistivity of PEDOT:PSS with the metal and silicon and the associated performance of PEDOT:PSS/n-Si solar cells. Two different spin speeds of 1000 rpm and 4000 rpm were used to deposit the PEDOT:PSS films over silicon. The PEDOT:PSS films were also deposited in single- and double-layer forms. We could achieve very low contact resistivity of PEDOT:PSS with silicon through spin speed optimizations. Hence, the overall performance of the PEDOT:PSS/n-Si solar cells improves with the spin speed for both single- and double-layer PEDOT:PSS film depositions.
... The silicon wafers are cut with a planar polished surface from ingot, they have a high natural surface reflectance of more than 30% [9][10][11] due to silicon's high refractive index with a strong spectral dependence [12]. Several techniques have been adopted by researchers to reduce the front surface reflectance and achieve maximum light trapping mechanism to enhance photoelectric conversion in a photovoltaic device [9,[13][14][15][16], such as antireflection coating (ARC) [16] surface texturing [13,[17][18][19][20][21] plasmonic effect, Si nanowires, Si nanoholes, Si nanocones, luminescent down shifting and vapor texturing [22][23][24][25][26]. For instance, textured surface reduces surface reflection, improve internal reflection, and optical path in the active material thus enhancing photoelectric conversion in solar cell device leading to overall improved photovoltaic parameters. ...
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... The Thin film FSEM pictures as prepared (PEDOT: PSS) with two different magnifications. The Figure 6a and d revealed that the (PEDOT: PSS) was in the shape of sheets [15] Table 2. the electrical resistivity (ρ), Hall mobility, and conductivity and Hall coefficient. ...
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In recent years, based on organic–inorganic hybrid solar cells the p-type conducting polymer poly (3,4-ethylenedioxythiophene): poly styrene sulfonate (PEDOT: PSS) and n-type silicon (Si) have attracted a lot of attention. We describe an efficient hybrid solar cell based on PEDOT from this perspective: The simplest and most cost-effective method is to use PSS and a planar Si substrate (1 0 0) fabrication method effective techniques for experimentation Drop casting was used to construct PSS at temperatures, solar cells based on a heterojunction between crystalline silicon and the organic polymer PEDOT: below 100 degrees Celsius. The Si/PEDOT interface prevents electrons from migrating to the anode in n-type silicon and serves diffused p-n junctions as a low-temperature alternative The devices take the consequence of silicon’s absorption and transfer of light capabilities while combining them with organics’ ease of manufacture. PEDOT: PSS and PEDOT: PSS interface properties hermetic Psi were studied. The structural, optical and morphological properties in addition to electrical PSS is a property of PEDOT. were studied, the effectiveness of The flawlessly matching contact between the PEDOT: PSS film and the tight silicon can be attributed to conversion. Obtaining Silver pave efficiency is a glowing future approach in order to attain maximum efficiency, low-cost solar cells.
... Among non-oxide hole-selective materials for Si solar cells [ Table 8], there are both organic and inorganic materials used as hole-selective contacts with Si. PEDOT:PSS [44,71,158,186,187,196,197,200,202,207,[209][210][211][212][213][214][215][216][217][218][219][220][221][222][223][224][225][226]233,237,238,245,259] is the most explored organic hole-selective material for Silicon heterojunction with record efficiency of upto 20.60% [219] by ISFH Germany followed by other hole-selective organic materials [214,227]. This is followed by inorganic hole-selective contacts like CuI [228][229][230][231] and Cu 2 S [80] with efficiencies of 20.70% and 21.04% respectively involving partial rear contacts i.e. ...
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The basics of dopant-free materials used as carrier-selective layers at the surfaces and interfaces in c-Si or poly-Si solar cells have been reviewed. Emphasis has been given to the discussion of a host of transition metal oxides (TMOs) having wide range of band structures and which have the carrier selective property of allowing only one type of carrier (electron or hole) to flow across their junctions with Si. The fabrication process of these materials are benign and at low temperatures which make them gradually attractive over the doped Si layers which need toxic materials and/or high temperatures for their formation. Silicon solar cells having dopant-free carrier selective TMOs fabricated by various groups using different fabrication processes and different contact configurations (Full area contacts, Partial area contacts or Interdigitated back contacts) have been reviewed and presented alongwith their photovoltaic performance. Different passivation schemes (full area or partial area) that could be used alongwith these dopant-free carrier selective materials have also been discussed.
... A thin coating of PEDOT: PSS is chosen as the hole transport layer (HTL) [16,37]. Additionally, the wide band gap of PEDOT:PSS helps to reduce the interface recombination velocities and also prevents the electrons from recombining at the front surface of the device [38]. NPs on top of the Si substrate fabricated by nano-texturing the top surface of Si substrate has an effective height of 150 nm whereas the HTL has a thickness of only 50 nm for efficient transport of charge carriers [39]. ...
... The details of the fabrication process are elaborated in Ref. [53]. From the thorough review of the available experimental literature, we can conclude that our proposed design is practically feasible in terms of fabrication [12,38,54]. ...
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In this paper, we have analyzed the role of single and dual nanostructures embedded in PEDOT:PSS (Poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate))/c-Si Hybrid Solar Cells (HSCs) using Finite Difference Time Domain (FDTD) method. HSC structures with Nanopyramids (NPs) on top of the Si substrate exhibit optical Jsc of 35.91 mA/cm². We obtained significant improvement in Jsc by 1.56% and 14% observed with the insertion of oxide coated Ag MNPs (Metal Nanoparticles) and Al MNPs in the rear and front end of the HSC, respectively. A comparative analysis of these three structures denoted as NP (for nanopyramids only), NP + Ag MNPs (nanopyramids with Ag MNPs embedded in the front end of the HSCs along with oxide coated MNPs in the rear end) and NP + Al MNPs (same as the second structure with Ag MNPs replaced with Al MNPs) shows that HSCs with NP + Ag MNPs and MoO3 coating achieve the highest open circuit voltage (Voc) of 0.7 V, electrical Jsc of 22.19 mA/cm², power conversion efficiency (PCE) of 12.56% and Fill Factor (FF) of 80.85%.
... Taking into account thickness of BEHP-co-MEH PPV and PEDOT:PSS,Chang et al. (2012) also observed that thicker layers of dye (BEHP-co-MEH PPV), increase the efficiency percentages of ssDSSCs. For PEDOT:PSS,Jiang et al. (2018) found its best photovoltaic behavior using films of 100 nm of thickness. In the same way, a polymer bandgap study was developed byHou et al. (2009), Ullah et al. (2017 andFang et al. (2011), they worked with low bandgap polymers, either as dye or electrolyte, having greater results in the devices. ...
Article
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In this paper, we present the performance of two solid-state dye sensitized solar cells (ssDSSCs) through SCAPS-1D simulation. The five layers of proposed structures are in solid-state. Recombination reactions and defects in materials were not considered to obtain maximum efficiency. The conjugated polymer BEHP-co-MEH PPV (poly{[2-[2′,5′-bis(2″-ethylhexyloxy)phenyl]-1,4phenylenevin-ylene]-co-[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevin-ylene]}) and \({\text{MoO}}_{2} /{\text{MoO}}_{3}\) are studied by first time in a ssDSSCs using SCAPS-1D program. The current–voltage characteristic (I–V or J–V) and Quantum Efficiency behavior is analyzed and compared. The efficiencies achieved with BEHP-co-MEH PPV/\({\text{MoO}}_{2} {\text{MoO}}_{3}\) and BEHP-co-MEH PPV/PEDOT:PSS are 8.42% and 7.95%, respectively. A solar cell with these characteristics can be included in a manufacturing workflow allowing its large-scale production.
... Among many polymer or organic candidate materials, poly (3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT: PSS), a conducting polymer, has attracted much attention due to its various advantages for HSCs, such as antireflection, passivation, facilitation of hole transport, and optical transmission [6]. This is why a heterojunction of PEDOT:PSS/Si is highly attractive for HSCs, especially in view of simple/ less-pollutive fabrication and easy commercialization [7][8][9][10][11][12][13][14]. However, the carrier transport can be hindered by the poor conductivity of the PEDOT:PSS, thereby limiting the PCE [14]. ...
Article
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Recently, conducting polymer/Si hybrid solar cells (HSCs) based on simple fabrication processes are highly attractive due to their low cost, but low conductivity of the polymer, high reflection index of Si, and large recombination loss on the Si back contact are major drawbacks that should be solved for the practical applications. Here, we first report HSCs composed of graphene quantum dots (GQDs)-mixed poly (3,4-ethylenedioxythiophene) (PEDOT:GQDs)/ porous Si (PSi)/n-Si/titanium oxide (TiOx, back passivation layer). Maximum power conversion efficiency (PCE) of 10.49 % is obtained from the HSCs at an active area of 5 mm2, resulting from the enhanced conductivity of the PEDOT:GQDs, the reduced reflectivity of Si (the increased absorption) by the formation of PSi, and the prevented recombination loss at the Si backside due to the passivation. In addition, the HSCs of 16 mm2active area maintain ~78 % (absolutely from 8.03 to 6.28 %) of the initial PCE even while kept under ambient conditions for 15 days.