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Schematic of a 6T SRAM bit cell with noise voltage sources for measuring SNM (Seevinck et al., 1987)
Source publication
This paper examines the factors that affect the static noise margin (SNM) of static random access memories which focus on optimizing read and write operation of 8T SRAM cell which is better than 6T SRAM cell using swing restoration for dual node voltage. New 8T SRAM technique on the circuit or architecture level is required. In this paper, comparat...
Contexts in source publication
Context 1
... can be obtained using using the voltage transfer characteristic (VTC) of the two cross coupled inverters of the SRAM cell ( Seevinck et al., 1987). Figure 1 illustrates the schematic of a 6 transistor SRAM cell for simulating the static noise margin. The sources Vn are the noise sources at the state nodes of the cell (Pavlov & Sachdev, 2008). ...
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... VTC of one of the inverters is flipped with respect to the line y = x in order to form a "butterfly curve". The SNM is the side of the smaller square that can be fitted inside the "eye" of the graph as shown in Figure 1 ( Seevinck et al., 1987). This Paper is organized as follows: the characteristics of 6T SRAM cell are described are represented in section II. ...
Context 3
... a conventional 6T SRAM cell, the data storage nodes are directly accessed through the bit-line access transistors during read operations, as shown in Figure 1. While reading, the storage node voltages are disturbed between cross-coupled inverter pair and bit lines. ...
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... lines act as input and output nodes. During a read operation, bit lines Seevinck et al., 1987) document, which may be purchased using the "Add to Cart" button on the product's webpage: www.igi-global.com/chapter/research-implementation-self-publishingwebsite/72941?camid=4v1a ...
Context 5
... can be obtained using using the voltage transfer characteristic (VTC) of the two cross coupled inverters of the SRAM cell ( Seevinck et al., 1987). Figure 1 illustrates the schematic of a 6 transistor SRAM cell for simulating the static noise margin. The sources Vn are the noise sources at the state nodes of the cell (Pavlov & Sachdev, 2008). ...
Context 6
... VTC of one of the inverters is flipped with respect to the line y = x in order to form a "butterfly curve". The SNM is the side of the smaller square that can be fitted inside the "eye" of the graph as shown in Figure 1 ( Seevinck et al., 1987). This Paper is organized as follows: the characteristics of 6T SRAM cell are described are represented in section II. ...
Context 7
... a conventional 6T SRAM cell, the data storage nodes are directly accessed through the bit-line access transistors during read operations, as shown in Figure 1. While reading, the storage node voltages are disturbed between cross-coupled inverter pair and bit lines. ...
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