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In this paper, power and speed efficient registers have been designed using different nanometer technologies. Serial in Serial out (SISO) and Serial in Parallel out (SIPO) shift registers are designed using 180 nm and 90 nm technologies. Both the design are analyzed and compared based on power, delay and power-delay-product (PDP). Present portable...
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Context 1
... 1.2 V for 90 nm technologies. Fig. 3 shows that these registers are constructed with the help of D flip flops, which again comprises of NAND gates. D flip flops are connected serially so as to form the serial shift register, in which the input as well as output proceeds in a serial fashion. 4-bit SISO shift register schematic design is shown in Fig. 4 for all the technology ...
Context 2
... 1.2 V for 90 nm technologies. Fig. 3 shows that these registers are constructed with the help of D flip flops, which again comprises of NAND gates. D flip flops are connected serially so as to form the serial shift register, in which the input as well as output proceeds in a serial fashion. 4-bit SISO shift register schematic design is shown in Fig. 4 for all the technology ...
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Citations
... A few of these flip-flops are connected with each other they have the similar clock signal out of each flip-flop, which is called "clock synchronisation." [1]. ...
... The source of one flip-flop is linked to the exit of another, etc forth. As far with each flip-flop gets a clock pulses that is comparable to another flip-flops, then these flipflops are synced with one another [1]. ...
... Because serial switching of information is essential, there are no links between the various flip-flops in this form of record. Data is provided to another flip flop independently as inputs, while outputs is likewise obtained individually of each flip-flop [1]. ...
The method of huge integrating involves implementing a significant transistor count in an extremely condensed space. Combinatorial logic has shown to be particularly effective in quantum computing as well as other designing applications. In VLSI design, the primary goal is to cut down on power consumption as well as latency. For the purpose of establishing technology and supporting the increased use of electrical machines, it is vital to decrease sub-threshold current flowing for large strains. This research explores the feasibility of implementing a shift register and without the Multi-threshold CMOS (MTCMOS) approach. At the process technology of 0.18 µm, 0.12 µm, and 90 nm, an investigation into the power loss and transmission delay characteristics of a variety of flip-flops is carried out. As technology gets shrunk, the amount of power lost through leakage rises. Using the greatest technique among all run time strategies, namely MTCMOS, helps to limit the amount of power lost due to leakage. The purpose of this article is to give a comparison between various traditional flip-flops and the TSPC flip-flop with regard to power usage, diffusion delays, product of delay-power (PDP), area, and power flow using the findings obtained from the Microwind simulator.
