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Schematic illustration of polarized infrared light with electric field vector parallel to the longer axis of nanostrips ( E
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Among conductive oxide materials, niobium doped titanium dioxide has recently emerged as a stimulating and promising contestant for numerous applications. With carrier concentration tunability, high thermal stability, mechanical and environmental robustness, this is a material-of-choice for infrared plasmonics, which can substitute indium tin oxide...
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... However, at temperatures above 573 K and 673 K, Al starts to melt from the surface, and the optical properties of ITO drastically deteriorate. For other materials, such as titanium-based oxides and nitrides [29][30][31][32][33], their plasmonic resonances are rather broad, and they start to corrode when the operation temperature exceeds 650 K. Based on the above disadvantages, LaB 6 films are considered to be more stable and suitable for use in gas environments and in solution which is advantageous for applications in spectroscopic infrared light sources in nondispersive infrared gas sensors, drying furnaces, thermophotovoltaics as well as in plasmon-enhanced vibrational spectroscopy [34]. ...
We report the fabrication of a mid-infrared device using LaB6 – Al2O3 – LaB6 trilayers, with an array of LaB6 strips as the top layer. Uniaxially oriented lanthanum hexaboride (LaB6) films self-organized in a (100) orientation were adopted together with a lithographic process using laser direct writing followed by reactive ion etching. The fabricated infrared absorbers based on our electromagnetic design exhibited excellent resonant absorption and flexible tunability by changing the periodicity and width of the top LaB6 strips. We examined the performance of epitaxial and sputtered LaB6 films by fabricating two different types of absorbers using sputtered LaB6(100) and epitaxial LaB6(100) films for the bottom mirror layers. Owing to a difference in crystallinity, the latter exhibited a lower background in the absorption spectra as well as in the thermal emission spectra, indicating its good spectral selectivity.
... The operating principle is the same as that of the Seebeck effect, wherein we excite the nanoantenna designs with various laser wavelengths (650 nm, 940 nm, and 1550 nm) that detect voltages produced by the properties of intersecting materials. Compared to the state of the art, to our knowledge, this is the first time that peak percentage voltage hike detection is attained when utilizing infrared energy [26][27][28][29]. ...
We present an experimental demonstration of a thermoelectric sensor coupled with a nanoantenna as an alternative option for detecting infrared energy. Two nanoantenna design (single element and an array) variations based on Yagi-Uda technology and one separate nano-thermoelectric junction array were fabricated and tested. The nanoantennas were tuned to operate and respond at a center wavelength of 1550 nm (193.5 THz) optical C-band window, but they also exhibited a resonance response when excited by lasers of various wavelengths (650 nm and 940 nm). The radiation-induced electric currents in the nanoantennas, coupled with a nano-thermoelectric sensor, produced a potential difference as per the Seebeck effect. With respect to the uniform thermal measurements of the reference nanoantenna, the experiments confirmed the detection properties of the proposed nanoantennas; the single element detected a peak percentage voltage hike of 28%, whereas the array detected a peak percentage voltage hike of 80% at the center wavelength. Compared to state-of-the-art thermoelectric designs, this was the first time that such peak percentage voltages were experimentally reported following a planar design based on the Seebeck principle.
... Ngo et al. reported the synthesis and demonstration of niobium-doped titanium dioxide for the application in plasmonic antenna and surface-enhanced infrared absorption [6]. The nanopatterns prepared by electron beam lithography, plasma etching/ashing processes showed well-defined antenna resonance as well as clear polarization/size dependence, which confirms that these materials are suitable for infrared plasmonic applications. ...
Infrared light radiates from almost all the matter on earth and its strategic use will be an important issue for the enhancement of human life and the sustainable development of modern industry [...]
Semiconductor plasmonics has become a frontier for light manipulation beyond the diffraction limit, offering a broader spectral range and higher flexibility of plasmon resonances. Due to versatile and unique plasmonic properties, semiconductor nanostructures hold high promise in a plethora of applications, such as integrated photonics, solar energy, and biosciences. This review discusses the advances in semiconductor plasmonics, establishing links among the distinctive nanostructures, tailorable plasmon properties, and ever-expanding applications. It sheds light on the characters and dynamics of plasmons in semiconductors throughout their lifetime. The review then showcases representative plasmonic semiconductors while sketching a roadmap on tailoring plasmonic response in semiconductor platforms spanning nanocrystals, metasurfaces and heterostructures. Next, the overview of plasmonic semiconductor applications highlights the relevance of pronounced plasmon resonance with mitigated loss and the utilization of damping-induced hot carriers and thermalization. Finally, we conclude by envisioning the prospects and challenges of this field.
We investigated the electronic structures and optical properties of doped anatase TiO2 in the infrared region using first-principles density functional theory with the independent-particle approximation. By examining the dopants from groups V-B, VI-B, and VII-A of the Periodic Table of Elements, we found that the anatase TiO2 doped with different dopants Nb, Ta, W, and F showed excellent plasmonic properties in the near-infrared region with nonmetal-to-metal crossover frequencies within a range of 2.0–2.7 µm along the densest-plasma direction. Furthermore, we discussed the prospect of producing low-cost robust mid- to far-infrared plasmonic devices based on doped anatase TiO2. Our combined analysis with electromagnetic numerical simulation showed that the doped anatase TiO2 exhibited well-defined surface plasmon polariton as well as localized surface plasmon resonances in the midinfrared region. We expect that this n-type doped anatase TiO2 is a highly promising material for infrared plasmonic applications in harsh environments such as aqueous solutions and/or high temperature.
