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2 Schematic illustration of a double Thompson tetrahedron. 

2 Schematic illustration of a double Thompson tetrahedron. 

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Figure 2.3: Schematic illustration of the three growth modes of thin...
Figure 2.4 Schematic illustration of lattice matching epitaxy [19] 
Figure 2.2: A schematic illustration of thin film growth steps: (a)...
Figure 2.1: The schematic illustration of the different...
+24 Table 2 .1 Optical properties of MgO 
Planar Defects in Metallic Thin Film Heterostructures
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  • Jul 2014
http://www.lib.ncsu.edu/resolver/1840.16/9682
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... A fast-growing number of research groups worldwide are conducting researches using this technology. Advances in 0D [26], 1D [27], and 2D [28][29][30][31][32][33][34][35][36][37][38][39][40][41][42][43]material fabrication technologies have enabled various forms of nanoscale materials, which increased the needs of in situ ETEM studies through the closed-type approach, i.e. sealed gas cells. Sealed gas cells enabled in situ TEM observations, thus allowing the evaluation of the effect of external stimuli including mechan‐ ical, electrical, and magnetic force on nanomaterials. ...
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... In each repetition, the Ge and Cu layers were controlled to be ultrathin, such that Cu and Ge atoms can mix intimately and bond with each other. Note that for PLD, the energy of the ablated species can range from 1 to 1000 eV with an average around 20 eV, while for thermal or e-beam evaporation techniques, the energy of the ejected species is about 0.1 eV at 1200 K [18,19] . The excess kinetic energies of the Cu and Ge atoms will contribute to higher diffusion and reaction rates, thus a Cu 3 Ge film with better crystallinity is expected. ...
... The low stacking fault energy of Cu 3 Ge leads to a small energy barrier for the generation of stacking faults by the nucleation and slip of a leading partial. The differencesapphire (11121314151617181920 zone in Miller-Bravais Indices system). (b) The schematic illustration of the matching scenario at the interface between e 1 -Cu 3 Ge (0 1 0) and c-sapphire (0 0 0 1). ...
Fabrication of epitaxial Cu3Ge on sapphire with controlled crystallinity and planar defects
Article
  • Apr 2015
  • J ALLOY COMPD
In this paper, we report the growth of epitaxial Cu3Ge thin films on c-plane sapphire substrate through domain matching epitaxy. Systematic study on the crystallinity of Cu3Ge thin films is carried out to correlate epitaxial characteristics with substrate lattice misfit. The crystallinity and epitaxy of the as-grown Cu3Ge thin films are improved considerably by controlling the parameters of pulsed laser deposition. The epitaxial characteristics and formation of twins in Cu3Ge are investigated and a mechanism of twin formation in Cu3Ge ɛ1-phase is discussed. The present study proves that the crystallinity and defect structure of Cu3Ge thin film can be controlled by adjusting the deposition parameters. It serves as a fundamental research for future applications of epitaxial Cu3Ge as metallization material in semiconductor industry.
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