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Schematic diagram of three stage CMOS ring oscillator The schematic diagram of three stage conventional CMOS ring oscillator is shown in Fig. 2. It works at the frequency in the KHz range at latest technology. To achieve oscillation, the ring must provide a phase shift of 2 radian and should have unity voltage gain. Hence each delay stage should provide phase shift of N / radian, where N is number of delay stages. The remaining radian phase shift is provided by dc
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In this paper a voltage controlled oscillator (VCO) using MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and Double Gate (DG) MOSFET are compared and analyzed. The comparison has been done on the basis of different parameters: voltage swing, tuning range, power consumption, number of stages and phase noise. Two architectures namely curr...
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Today, the reference oscillators based on quartz resonators are limited in the frequency of operation to a maximum of 250 MHz. Deriving GHz range signals from this reference requires frequency multiplication or frequency synthesis. However, the multiplication increases the phase noise of the output signal according the 20 log of multiplication fact...
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... From Table-1 and Table-2 we can observe that, decrease in technology, represents decrease in channel from ssource drain which gives rise to increase in current. In 90 nm technology, the maximum current provided is 20 GHz whereas in 45 nm technology provides 43 GHz [20][21][22][23][24]. Table 3 Comparison of 3 stage with 5 stage proposed Ring VCO. ...
For various wireless communication systems, the voltage-controlled oscillator (VCO) is the essential unit. Voltage controlled ring oscillator is mainly used for data communication. This paper mainly focuses on analysis and performance of single ended based VCO design and includes, tradeoffs between frequency generation, phase noise, area, power, etc. To meet high oscillation frequency with more stability and small on-chip area, an improved ring voltage-controlled oscillator (VCO), with substrate bias effect has been proposed in this paper. In ring VCO power dissipation plays a very important role as well as in nanoscale CMOS technology. The main purpose for the design is better performance and easy way of communication with variable high frequency and low power applications. The main advantage of the design is power consumption is less and working at very high frequency with low input-controlled voltage, because of use of substrate biasing technique. The simulation has been done by using mentor graphics 90 nm CMOS technology at room temperature 27 C with supply voltage () of 3 V.
... Comparators approximates the distinction between 2 analog signals given as inputs, and assess digital output amplitude supported the polarity of this distinction. Comparators area units are wide employed in deciding circuits, level shifter, oscillators, ADCs etc. [1][2][3][4][5][6][7]. ...
The well developing industry of electronics is
insistent to low power and high speed and less area ADCs
(analog to digital converters). Comparator is device that
is especially employed in ADCs, used for division method,
associated for square measure and chiefly liable for delay
created and power consumption by an ADC. A low power
and high speed comparator is needed to satisfy the longer
term demands. The circuit conferred during this paper
is designed using 0.35μm CMOS technology with 1.65V
bias voltage and 12μA bias current. Cadence virtuoso
tool is employed for the designing and simulation for the
comparator circuit. The correct analysis of propagation
delay, settling time, speed of the comparator is mentioned
very well in detail.
... These double gate based current mirrors can be used to implement various analog circuits like OTA (Operational Transconductance Amplifier), VCOs, etc. [7,8]. The cascode configuration is used to increase output resistance and improve the accuracy of current mirrors. ...
With the technology trend moving towards smaller geometries and improved circuit performances are expected to replace the traditional bulk devices. Accurate current mirroring is a critical analog design requirement in many applications. Current mirror is an essential component in analog design for biasing and constant current generation. This paper presents the nano scale double gate MOSFET based efficient current mirror and cascode current mirror designs implemented at 22 nm technology. They have wide bandwidth, wide tuning range and operate at 1V power supply. The proposed double gate based current mirrors are better than conventional MOSFET based current mirrors. It shows how the nanoscale double gate MOSFETs can pave way for efficient, tolerant and smaller circuits with tuneable characteristics.
... The three stage feedback system can sustain oscillation, if gain of each stage must be higher than or equals to 2, which be able to prove by the small signal ac analysis also [7][8][9][10][11][12][13]. On the other hand for large signal analysis (Figure 2), time delay ( d t ) provided by each stage is given by ...
To meet the requirement of the growing wireless arena, ring structured voltage controlled oscillators have been discussed by means of small and large signal analysis to satisfy oscillatory conditions. For attainment of high oscillation frequency, better stability and small on-chip area, a combined structure of true CMOS inverter and current starved inverter has been proposed in this paper. In the designed circuit, the current steering technique is used to attain high oscillation frequency. The attractive feature of this VCO is its higher tuning range, less phase noise and reduced area in contrast to conventional current starved ring VCO and is useful for various application domains. The post layout simulation of proposed as well as conventional circuits is approximately similar which ensure the validity of results produced during schematic analysis.
The characteristic and parametric dimensioning of Enclosed Layout (ELT) MOSFET with various geometric sizes and shapes has been taken into consideration for the study of irradiations and leakage at room temperature, which has been confirmed on several technological platforms. Using the most advanced technologies, parametric changes with minimum W/L ratios, layout area and input capacitance to reduce leakage current can improve the performance. The technique of hardening of the MOSFETs in contrary to total-dose radiation effects in space environment built in enclosure to the enclosed transistor for the elimination of edges, responsible of conventional NMOS transistors leakage path creation. High yielding, high level of integration, radiation immune, high speed, low costing and high volume production are the profit advantages of the enclosed layout.
This paper describes analysis and design of 2-stage CMOS operational amplifier (Op Amp). The designed circuit operates at 3.3 V of supply voltage and at tsmc 0.35 μm CMOS technology. The performance parameters such as: gain, phase margin, GBW, ICMR, Slew Rate, Offset, CMRR, output swing etc. also have been analyzed after simulation which is carried out using Cadence Virtuoso Tool. The Op-Amp is designed to display a unity gain frequency of 7.85 MHz and exhibits a gain of 86.23 dB with a 49° phase margin. Obtained results also agree with theoretical predictions.
