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Schematic diagram of the ring cavity of the mode-locked fiber laser. LD, 974 nm laser diode; YDF, ytterbium-doped fiber; WDM, wavelength division multiplexer; Isolator, 1064 nm polarization-independent isolator; PC, polarization controller.
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Methylammonium tin triiodide (CH3NH3SnI3) as a kind of lead-free perovskite semiconductor materials has emerged as a star material for photonic applications. Herein, for the first time, we demonstrate CH3NH3SnI3 microcrystals grown directly on D-shaped fibers as saturable absorber for generating mode-locked pulses in fiber laser. The saturable abso...
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In our work, a CGT–polyvinyl alcohol film type saturable absorber with a modulation depth of 1.4% and a saturable intensity of 7.9 MW cm⁻² was prepared and employed for demonstrating a mode-locked Er-doped fiber laser. The fiber laser was capable of generating stable ∼550 fs pulses centered at 1558.6 nm under a 7.95 MHz repetition rate. Additionall...
We report on the study of single-mode fiber-laser-pumped mode-locked Yb:CALYO lasers via using a passive saturable absorber and Kerr-lens mode-locking technique, respectively. Up to 3.1-W average power with 103-fs pulse duration is obtained from the passive mode-locking, and down to 36-fs pulse duration with more than 2-W average power is achieved...
Experimental observations of spatiotemporal mode-locked multiple-soliton, including harmonic mode locking and multiple pulses, in multimode fiber (MMF) lasers are reported. Numerical simulations are conducted to investigate the nonlinear dynamics of multi-pulsing. The influences of cavity parameters on the spatiotemporal outputs are analyzed by sim...
We investigate a new type of molybdenum disulfide (MoS2)-doped sol-gel glass saturable absorber (SA) fabricated by sol-gel technique. The reagents used for the sol-gel glass contain Tetraethyl orthosilicate (TEOS), ethanol, water, and hydrochloric acid. Different from the traditional ways of fabricating SAs, the MoS2 in our method is encapsulated b...
A tunable mode-locked erbium-doped fiber laser with a digital micro-mirror device (DMD) as the wavelength tuner and nonlinear amplifying loop mirror as the mode-locked device is proposed and experimentally demonstrated. The mode-locked pulse with the center wavelength of 1538–1565 nm continuously tunable is achieved. The average power of the output...
Citations
... Most reported works as in Table 1 uses single-mode cladding ytterbium-doped fibers (SC-YDFs), which result in lower output power such as those reported by (Ramlan et al. 2021) using Gd 2 O 3 , (Qi et al. 2021) using SESAMs, and(Chang et al. 2021) using single mode-graded index multimode-single mode fiber (SMF-GIMF-SMF). Similar low output power are being observed using tin diselenide (SnSe 2 ) embedded into PVA (Hu et al. 2019) and Sn-based perovskite (CH 3 NH 3 SnI 3 ) (Bao et al. 2018). This is primarily due to corepumping, where normally the core is smaller in diameter and it requires expensive singlemode LDs that come with a lower pumping power. ...
... The central wavelength of the outputs in this work is 1052 nm, which is quite similar to the rest. The center wavelength of this work is slightly shorter than that of (Bao et al. 2018;Hu et al. 2019;Qi et al. 2021) but longer than that of (Chang et al. 2021;Ramlan et al. 2021). The mode-locked fiber laser using CH 3 NH 3 SnI 3 generated optical outputs with a pulse width of 1 ps (Bao et al. 2018), which is the shortest compared to the rest except for this reported work. ...
... The center wavelength of this work is slightly shorter than that of (Bao et al. 2018;Hu et al. 2019;Qi et al. 2021) but longer than that of (Chang et al. 2021;Ramlan et al. 2021). The mode-locked fiber laser using CH 3 NH 3 SnI 3 generated optical outputs with a pulse width of 1 ps (Bao et al. 2018), which is the shortest compared to the rest except for this reported work. This mode-locked pulses in this work have a pulse width of 108 fs, which is shorter by more than 9 times to that of (Bao et al. 2018). ...
Femtosecond fiber lasers with a high peak power are of great interest due to their various real-world applications. This work uses a double-clad ytterbium-doped fiber (DC-YDF) as the gain medium to successfully generate mode-locked pulses with a high peak power of hundreds of kilowatts at the 1 μm wavelength. The pulse width of the mode-locked pulses was as short as 108 fs, with a fundamental frequency of 1.9 MHz. The highest average power output, energy pulse, and peak power of the mode-locked pulses were 114.5 mW, 58.4 nJ, and 540.7 kW, respectively. The mode-locked fiber laser operates at a center wavelength of 1052 nm with normal net-cavity dispersion, which shows characteristics of a dissipative soliton. The mode-locked pulses exhibit good stability, as demonstrated by the measurement of the signal-to-noise ratio (SNR) of 40 dB. It is the very first instance of high-power short pulses mode-locked in the 1 μm range being shown utilizing a DC-YDF with a two-dimensional (2D) material-based saturable absorber (SA) into the laser cavity.
... EDFLs are sought after, as they offer various applications in many industrial and scientific research areas, such as biomedical imaging research, material processing, and supercontinuum generation [7][8][9]. Nowadays, despite a growing number of SAs based on new materials, such as the Topological Insulator [10,11], Transition Metal Dichalcogenides (TMD) [12], Black Phosphorus [13,14], MXenes [15,16], metal halide perovskites [17], ferromagnetic semiconductors [18], and Ternary Transition Metal Chalcogenides (TTMC) [19] having emerged, graphene is still irreplaceable by new materials due to its fascinating saturable absorption properties and broad operational wavelength range. More recently, much research has begun to focus on graphene oxide material and its various applications in photonics [20][21][22]. ...
We demonstrate a simple mode-locked Erbium-doped fiber laser (EDFL) based on self-synthesized saturable absorber (SA) by combining graphene oxide (GO) and polyethylene oxide (PEO) solutions to form a GO-PEO thin film. This thin film was incorporated into an Erbium-doped fiber laser (EDFL) with a cavity length of 9 m. Our EDFL could operate at a 22 MHz repetition rate with a 0.8 ps pulse duration. The laser also showed stable soliton pulses under various laser pump power values. Our reported results show that GO-PEO SA is effective and proven as a cost-effective material for saturable absorbers for EDFLs.
... Innumerable SAs have been reported, such as doped crystals of U 4+ : SrF 2 and Cr 3+ : YAG [19,20] with better stability and performance, and novel micro-nano materials with more compact cavities have also been reported. Among these SAs, two-dimensional micronano materials have attracted much more attention because of their superior nonlinear absorption characteristics over a wide wavelength range, including graphene [21,22], black phosphorus (BP) [23], perovskite-structured materials [24][25][26], hexagonal boron nitride (hBN) [27], transition-metal dichalcogenides (TMDs) [28], and so on, resulting from the arrow band gap or direct band gap, high carrier mobility, and fast switching speed [29][30][31][32]. ...
A passively Q-switched compact dual-wavelength Er: SrF2 laser, operating at a 2729.73 nm and 2747.2 nm wavelength, was demonstrated by utilizing CsPbCl3 quantum dots (QDs) as a saturable absorber (SA). The maximum average output power with the shortest duration of 510 ns and a repetition rate of 45 kHz was achieved at 190 mW, and the corresponding maximum single pulse energy and the peak power were 73.69 μJ and 141.7 W, respectively. The results present an efficient dual-wavelength laser source, and the halogen perovskite quantum dot has the potential to be employed as an excellent saturable absorber in mid-infrared pulsed solid-state lasers.
... [2] After the demonstration of CNT and graphene SAs, numerous 2D light-absorbing materials were introduced as the SAs for pulse lasers, such as transition metal dichalcogenides (TMD) in 2014, [8] topological insulator in 2015, [9] black phosphorus in 2015, [10] MXene in 2017, [11] and lately perovskite in 2018. [12] These materials were demonstrated with fascinating and interesting properties, especially in optoelectronics, such as bandgap tunability by defect engineering for TMD, [13] insulator/conductor transition by edge/surface engineering for topological insulator, [14] high on-off current ratio for black phosphorus, [15] excellent bonding ability to various species by the functional surface with high electrical and mechanical stability for MXene, [16] as well as high power conversion efficiency of perovskite for solar panel and light-emitting diode application. [17] These lightabsorbing materials show saturable absorption, which has been explored to generate a few tens of fs to a few hundreds of ps laser pulses. ...
Saturable absorbers (SAs) have been regarded as a low‐cost yet robust and compact solution to pulse generation in different fiber and solid‐state ultrafast lasers. Following the development of different artificial SAs and semiconductor SA mirrors, carbon nanotube (CNT) and graphene are discovered and employed as SAs for solid‐state as well as fiber lasers. In the past decade, a growing number of SAs based on new materials like MXenes and metal halide perovskites have emerged, while CNT and graphene are still irreplaceable by new materials due to their fascinating saturable absorption properties. Instead of searching for new SAs, the investigation of transient dynamics for mode‐locked pulse generation still relies on the use of CNT and graphene SAs in the fiber laser system due to their reproducible performance and facile fabrication. In this review, a comparison between CNT and graphene will be thoroughly studied in terms of optical nonlinearity, relaxation and recovery time, saturation intensity or fluence, modulation depth, non‐saturable loss, and damage threshold dynamics. In the end, this review will address the challenges in the selection of SAs and provides recommendations for CNT and graphene SAs used in different mode‐locked fiber lasers. During the past decade, carbon nanotube (CNT) and graphene have emerged as saturable absorbers (SAs). Thus far, CNT and graphene are still irreplaceable by new materials and are frequently employed in many laboratories to mode‐lock the fiber laser due to their fascinating saturable absorption properties. These properties for SAs: CNT versus graphene are reviewed and compared.
... The CB can then no longer accept more incoming electrons, which results in the SA. Notably, although the photon energy was slightly smaller than the bandgap energy, the samples still show the SA at 532 nm, which might be explained as the photoexcited electronic transition to the bandgap trap states [13,38]. Figure 5(b) shows a closed-aperture (CA) Z-scan divided by the open-aperture Z-scan (CA/OA) curves of PQDs and PQDs-G. ...
Halide perovskite quantum dots (PQDs) have exhibited significantly superior nonlinear optical properties compared to traditional semiconductor materials thanks to their peculiar physical and electronic structures. By further improving the nonlinear optical properties of PQDs, it is expected to adapt to ultrafast photonics applications. This work reported the nonlinear optical properties of methylammonium lead bromide-graphene (CH 3 NH 3 PbBr 3 -G) composites synthesized by growing CH 3 NH 3 PbBr 3 quantum dots directly from a graphene oxide lattice. Our experiments indicate that the combined advantages of the ultrafast charge transport properties from graphene and the strong charge generation efficiency of perovskite can be integrated together. The CH 3 NH 3 PbBr 3 -G composite exhibited enhanced saturable absorption properties with large modulation depth and very low saturation intensity. The transient absorption spectra and carrier dynamics analysis revealed that the enhancement of the saturated absorption properties of the composites mainly arose from the ultrafast charge transfer between G and CH 3 NH 3 PbBr 3 which promoted the coupling between different states. The results pave the way for the design of optical switches or mode lockers based on saturable absorbers with good performance.
... Since 2017, perovskites have been used as slow SAs in ultrafast photonics at 1064 nm [213] and communication band [214]. The typical experimental diagram of passively mode-locked fiber laser based on SA is shown in Fig. 9g. ...
The last decade has witnessed great progress in photovoltaic technology based on organometal halide perovskites because of their low nonradiative recombination loss, long carrier lifetime, and long diffusion length. The excellent optical properties and easy preparation of organometal halide perovskite-based photovoltaic products enable their wide applications in electro-optical and opto-electrical conversions. In this review, photoinduced free carriers, exciton recombination, and diffusion properties of perovskite photoelectronic devices are discussed. By controlling grain sizes and grain boundaries, suppressing defects, and conducting interfacial charge transfer, their dynamics can be controlled in a versatile manner. The generality and differences in “effective carriers” for device applications, including their electro-optical and opto-electrical conversions, are discussed. In all-optical devices, a strong light-matter interaction causes nonlinear effects, such as two-photon absorption, self-phase modulation, and optical blenching, which enable high-resolution imaging, optical modulation, and optical switching. This review provides a basis for constructing high-performance photoelectronic devices.
... The produced mode-locking pulses have a duration of 1.77 ns, a maximum output power of 28.19 mW, and a 3 dB bandwidth of 8.09 nm. 288 ...
Nonlinear optics has undergone dramatic developments in the past 60 years, which has revolutionized the photonic and optoelectronic fields with many essential applications such as electro-optic switching, frequency mixing, optical parametric oscillation, optical phase conjugation, and so forth. As one of the new and promising candidates for both next-generation photovoltaic and optoelectronic devices, halide perovskite semiconductors have attracted extensive research attention because of their excellent electrical and optical properties demonstrated in the linear optical regime. In the past five years, halide perovskites have become a new research frontier of nonlinear optical materials because their highly tunable chemical components and multiple structures provide a variety of outstanding nonlinear optical properties, which support a broad scope of nonlinear optical applications. In this review, we have summarized the nonlinear optical properties of halide perovskites categorized according to the second-, third-, and high-order processes. Aside from the more conventional nonlinear effects, such as sum and difference frequency generation, this review also pays attention to the lesser known but important nonlinear phenomena, such as linear and circular photogalvanic effects, the high-order shift current effect, and the multi-photon pumped photoluminescence. We have also reviewed and summarized the nonlinear applications of halide perovskites, including multi-photon pumped photoluminescence imaging, multi-photon pumped amplified spontaneous emission and lasing, sub-bandgap and self-powered photodetection, all-optical and electro-optic modulation, saturable absorption, optical limiting, and so on. It is our belief that halide perovskites have proven to be excellent candidates for promoting the upgrading and updating of nonlinear optical devices with greatly improved performance and novel functionalities.
... Especially, distributed temperature sensing over conventional SMFs has found various practical applications to monitor the temperature profiles over a long length of installed optical fiber cables [21][22][23][24][25]. With a rapid light source development near λ = 1060 nm in recent years [26][27][28], and matching 1060 nm SMFs on the market [29,30], it is a good time to investigate the SBS characteristics of 1060 nm SMFs and their variation with respect to temperature in order to find potential for enhancing their distributed temperature sensing capability. ...
With the rapid advancement of Yb-doped fiber lasers (YDFL) whose output wavelength is near 1060 nm, passive fibers to carry the high optical power at the spectral range are also gaining significant importance. Stimulated Brillouin scattering (SBS) in the passive fibers connecting components in the lasers, especially, can set a fundamental limit in the power handling of YDFL systems. We experimentally analyzed SBS characteristics of passive single mode fibers (SMF) at a wavelength of 1060 nm. For two types of SMFs (Corning HI1060 and HI1060Flex), the Brillouin frequency (νΒ), its linewidth (ΔνΒ), and their variations with respect to the input laser power and the surrounding temperature were experimentally measured, along with the SBS threshold power (Pth). The optical heterodyne detection method was used to identify temperature-dependent SBS characteristics of fibers, and we found SMFs at λ = 1060 nm showed a temperature sensitivity in SBS frequency shift more than 40% higher than in conventional SMFs operating in C-band. Detailed procedures to measure the SBS properties are explained, and a new potential of 1060 nm SMF as a distributed temperature sensor is also discussed.
... Over the last several decades, passively mode-locked fiber lasers (PMLFLs), which produce high-peak-power femtosecond or picosecond laser pulses without inserting any active modulators in the laser cavity [1][2][3][4][5][6][7], have been greatly developed and widely used in the fields of nonlinear optics, spectroscopy, etc. [8][9][10][11]. For various applications, a PMLFL with wavelength tunability is desirable. ...
We have experimentally demonstrated a wavelength-tunable passively mode-locked all-fiber laser at 1.5 μm wavelength by using an erbium-doped fiber amplifier, a fiber-pigtailed semiconductor saturable absorber mirror, and a tunable birefringence Sagnac filter. In our work, by properly setting the polarization state of the propagating light in the birefringence Sagnac filter, the mode-locked lasing wavelength can be continuously tuned from 1544.1 to 1560.8 nm, corresponding to a tuning range of 16.7 nm. At a central wavelength of 1548.5 nm, the fiber laser delivers pulses as short as 713.2 fs with a repetition rate of 4.65 MHz, a 3 dB bandwidth of 5.7 nm, and an average output power of 4.86 mW. Our results show that such a mode-locked all-fiber laser has great potential in applications in nonlinear optics at the 1.5 μm band.
... Light-emitting diodes based on perovskites (PeLEDs) like CH 3 NH 3 PbX 3 and CsPbX 3 (X = Cl, Br or I) have attracted the attention of researchers due to their low temperature solution processability, high charge carrier mobility, bandgap tunability, color tunability, high color purity with narrow spectral width (20 nm full width at half maximum (FWHM)), and low material cost. [1][2][3][4][5][6][7] The use of an organic-inorganic perovskite allows fabrication of devices with external quantum efficiencies (EQE) of 16% for green emission (FAPbBr3 based) and over 20% for hybrid (CsPbBr3/CH 3 NH 3 Br) emissive layer and more than 20% for red emission (with FAPbI3), [8][9][10] showing that PeLEDs are competitive with conventional chalcogenide based quantum dot LEDs and organic LEDs. [11] However, the thermal and chemical instabilities of CH 3 NH 3 PbX 3 in the presence of heat and moisture remain an obstacle towards producing devices with long term stability. ...
... Generally, bathocuproine (BCP) and TPBi (1, 3, 5-tris (1-phenyl-1 H-benzimidazole-2-yl) benzene) act as an electron transporting layer (ETL) for CsPbBr 3 -based PeLEDs because of their high electron affinity and good electron transport capabilities. [9] However, organics and polymers have low hole blocking capability and are sensitive to oxygen and moisture. In contrast, inorganic metal-oxide semiconductors possess great chemical stability, high carrier mobility, and good conductivity making them a perfect candidate for LEDs. ...
Although all-inorganic perovskite light emitting diodes (PeLED) have satisfactory stability in ambient atmosphere, producing devices with high performance is challenging. A device architecture with reduced energy barrier between adjacent layers and optimized energy level alignment in the PeLED is critical to achieve high electroluminance efficiency. In this study, we report optimization of a CsPbBr3-based PeLED device structure with Li-doped TiO2 nanoparticles as the electron transport layer (ETL). Optimal Li doping balances charge carrier injection between the hole transport layer (HTL) and ETL, leading to superior performance in both devices. The turn-on voltages for the devices with Li-doped TiO2 nanoparticles was significantly reduced from 7.7 V to 4.9 V and from 3 V to 2 V in the direct and inverted PeLED structures, respectively. The low turn-on voltage for green emission is one of the lowest values among the reported CsPbBr3-based PeLEDs. Further investigations show that the device with inverted structure is superior to the device with direct structure because the energy barrier for carriers injection was minimized. The inverted structure devices exhibited current efficiency of 5.6 cd·A-1 for the pristine TiO2 ETL, while 15.2 cd·A-1 for the Li-doped TiO2 ETL, a factor ~2.7 enhancement at 5000 cd·m-2 .
