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A noval study on the fabrication of virgin and nickel (Ni) doped stannic oxide (SnO2) thin films with different doping extent have been conducted to augment the properties of stannic oxide thin films to incorporate into the electric cell which utilizes sun’s energy. The influence of the Ni doping with various extents on the structural, optical and...
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This work reports the pure matrix and synthesis of Zn(3–(x+y))NixMnyP2 (x=0.02, y=0.01, 0.03, 0.05, and 0.07) nanoparticles using the solid-state reaction method. The impact of Ni-Mn codoping on the structural, morphological, chemical identification, optical, photoluminescence, and magnetic properties of Zn3P2 nanoparticles is studied. The structur...
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... As SnO 2 has direct band gap (E g ), it is determined by extrapolating the linear part of the (αhν) 2 versus hν plot (known as Tauc plot) to energy hν axis [26]. Accordingly, it is found to be 3.97 eV doping [27,28]. Band gap shrinkage is explained on the basis of many body effects like electron-electron interactions and electron-impurity interactions. ...
SnO 2 and 5 wt% Ni doped SnO 2 nanoparticles (SnO 2 :Ni NPs) were successfully synthesised by a template-free hydrothermal method. X-ray diffraction (XRD) patterns depicted polycrystalline nature of the NPs in rutile-type cassiterite phase with dominant (110) and (101) Bragg diffraction peaks. Rietveld refinement of XRD patterns supported single phase tetragonal crystal structure having space group P4 2 /m n m. With Ni doping, crystallite size of NPs decreased from 39 nm to 35 nm whereas lattice strain increased from 3.56 × 10 ⁻³ to 3.99 × 10 ⁻³ . This is attributed to the substitution of Sn ⁴⁺ ion by Ni ²⁺ ions. The morphology of the SnO 2 NPs also changed from regular spherical shape to elongated irregular shape upon Ni doping. The dominant Raman peak obtained at 634 cm ⁻¹ matched with the signature peak for rutile SnO 2 (Raman A 1g mode). Further, we observed disappearance of E g mode due to Ni doping, which indicated the formation of oxygen vacancies. Also, XPS analysis indicated an increase of oxygen vacancy concentration in the doped NPs due to charge imbalance between Sn ⁴⁺ and Ni ²⁺ . The direct optical band gap of SnO 2 increased from 3.97 eV to 4.11 eV when doped with 5 wt% Ni and it is ascribed to Burstein–Moss effect. Irrespective of higher optical band gap of SnO 2 :Ni NPs, they showed enhanced photocatalytic activity to degrade Rhodamine B (RhB) dye molecules under UV-visible irradiation. The first order kinetic reaction rate constants for degradation of RhB were found to be 0.014 min ⁻¹ and 0.045 min ⁻¹ in case of SnO 2 and SnO 2 :Ni NPs respectively. The enhanced photocatalytic activity in SnO 2 :Ni NPs is explained by relating to the formation of more oxygen vacancies and chemisorptions of O 2 and H 2 O molecules followed by generation of radicals. This work demonstrates the superiority of SnO 2 :Ni NPs for use as photocatalytic material for industrial waste water treatment.
Long-range ferromagnetic ordering in semiconductors has become an attractive research hotspot due to its promising potential in spintronics and information technology. Especially the appearance of carbon-based semiconductors represented by graphdiyne (GDY) makes it easy to realize ferromagnetic semiconductors. Herein, a convenient and effective route has been developed to prepare GDY-based magnetic semiconductors using the modification with transition metal elements including Fe, Co, and Ni, respectively. Among them, lightly doped GDY with Co (Co-GDY) exhibits the most outstanding ferromagnetism with a typical Curie's temperature above room temperature. Meanwhile, the coercive field Hc = 78 Oe at T = 300 K of Co-GDY is the smallest, demonstrating characteristics of easy magnetization. Subsequent spin-polarized DFT calculation results reveal that the robust ferromagnetism of Co-GDY arises from the most significant local magnetic moment. Significantly, a noticeable band gap can still be maintained due to the very light doping level. These results reveal an optimization strategy for selecting doping elements, promoting carbon-based semiconductors application in spin-related fields.
