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In the present work, pure and magnesium doped Cu2O films were deposited on glass substrates by nebulizer spray pyrolysis method with doping concentrations of 0, 3, 5 and 7% at 280 °C. The as-prepared films were analyzed by XRD, AFM, laser Raman, UV–Vis, photoluminescence, Hall Effect measurements. An X-ray diffraction study clearly depicts that fil...
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... schematic diagram of nebulizer spray pyrolysis unit is shown in Fig. 1. This experimental set-up comprises of a purified ambient air compressor, pressurized air storage tank with air flow regulator, nebulizer kit with a mist guiding tube which is a glass tube of 50 mm inner diameter and a controlled electrical heating furnace. The optimized deposition parameters, i.e. substrate-spray nozzle distance, ...
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... the van der Pauw configuration, electrical studies were done by the D.C. fourpoint probes Hall Effect method. Figure 10 displays the corresponding variation in the resistivity, mobility and carrier concentration of electrons of the pure and Mg doped Cu 2 O films. The positive hall coefficient of all the films confirms the p-type nature. ...
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... the observed value is higher than nitrogen doped Cu 2 O, 2 × 10 −1 Ω cm [57]. Figure 10 shows an increase in the carrier mobility variation from 0.86 cm 2 /Vs in the Cu 2 O film to 8.46 cm 2 /Vs in the 7% Mg:Cu 2 O film. In addition to this, for an increase in Mg content from 0 to 7%, the charge carrier density is increasing in the range of 8.65 × 10 16 to 21.67 × 10 16 cm −3 . ...
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... photovoltaic activity of the fabricated FTO/ZnO/ Mg:Cu 2 O/Ag solar cell structure was analyzed by the I-V measurements at room temperature under the illumination at 100 W/m 2 halogen lamps (Fig. 11). The 0.5 cm 2 area was found to be the active area of the solar cell. The I-V graph determines the open circuit voltage (V oc ) and short circuit current (I sc ) for 7% Mg doping concentration in Cu 2 O films observed in illuminated conditions as shown in Fig. 12. Mg seemed to increase the conduction band of ZnO for the film ZnO/Cu 2 O ...
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... measurements at room temperature under the illumination at 100 W/m 2 halogen lamps (Fig. 11). The 0.5 cm 2 area was found to be the active area of the solar cell. The I-V graph determines the open circuit voltage (V oc ) and short circuit current (I sc ) for 7% Mg doping concentration in Cu 2 O films observed in illuminated conditions as shown in Fig. 12. Mg seemed to increase the conduction band of ZnO for the film ZnO/Cu 2 O hetero-junction [58]. Figure 13 shows the Anderson model-based energy band diagram of the heterojunction of ZnO/Cu 2 O. From the figure, it is seen that that the separation of valance band of p-type Cu 2 O is high compared to the separation of conduction band ...
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... I-V graph determines the open circuit voltage (V oc ) and short circuit current (I sc ) for 7% Mg doping concentration in Cu 2 O films observed in illuminated conditions as shown in Fig. 12. Mg seemed to increase the conduction band of ZnO for the film ZnO/Cu 2 O hetero-junction [58]. Figure 13 shows the Anderson model-based energy band diagram of the heterojunction of ZnO/Cu 2 O. From the figure, it is seen that that the separation of valance band of p-type Cu 2 O is high compared to the separation of conduction band edge of n-type ZnO. Therefore, it can easily separate hole-electron pairs causing more photogenerated carriers in this heterojunction. ...
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... factor (FF) and efficiency (η) respectively were calculated using Eqs. (7) and (8) respectively [59,60], Fill factor and efficiency can be calculated using the above formula. Fill factor consists of a value of 0.260 for 7% of Mg concentration and the power conversion efficiency is 0.65% for the 7% Mg doped Cu 2 O thin film as shown in Fig. 13. The values of Cu 2 O/ZnO heterojunction were reported by Duan et al. [61], exhibiting an efficiency (η) of 0.71% which is slightly lower than the obtained conversation efficiency. With the parameters such as temperature, pressure, the volume of the solution, concentration and doping with some other materials like Eu, Gd, Sr, and an ...
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... Moreover, the absorption edge shifts slightly to higher wavelengths when the Pr doping increases from 0 % to 3 % and to shorter wavelengths when the Pr doping increases from 3 % to 5 %. [30] According to the UV-Vis DRS and the band gap equation (2), [31] the (αhv) 2 -hv fitting curves for Pr : Cu 2 O with different Pr doping amounts (0, 1, 3, and 5 mol %) were obtained. ...
Cuprous oxide (Cu2O) has a narrow band gap of 2.1–2.3 eV, which facilitates the absorption of visible light and the photocatalytic removal of pollutants from water. However, the catalytic efficiency of Cu2O has been affected by the rapidly compounding carriers in the photocatalytic process. In order to achieve adequate separation of the photogenerated carriers, a straightforward liquid‐phase reduction technique was used in this study to successfully obtain praseodymium‐doped cuprous oxide Pr : Cu2O (0, 1, 3, and 5 mol %). Praseodymium ions were successfully doped into the Cu2O lattice interstitial, as demonstrated by XRD and SEM studies, and the doped praseodymium ions decreased the crystallite size. The FT‐IR peak also confirmed the existence of Cu2O at 631 cm⁻¹. With the increase of Pr doping to 3 %, the band gap gradually decreased to 2.12 eV. Experiments on the degradation of methyl orange (MO) under visible light irradiation showed that 3 % Pr : Cu2O photocatalyst showed the best photocatalytic performance. The Pr doping reduced the recombination of photogenerated electron‐hole pairs and enhanced the photocatalytic activity of Cu2O, according to the analysis results of PL, EIS and transient photocurrent response. Combining these results with active radical capture experiments, the functioning mechanism of the Pr : Cu2O photocatalyst was examined.
... Similarly, many synthesis methods have been adopted to obtain doped Cu 2 O nanostructures, such as electrodeposition [35], chemical displacement [36], hydrothermal synthesis [37], biosynthesis [38,39], chemical vapor deposition [40,41], pulsed laser deposition [42], solvothermal synthesis [43,44], and spray pyrolysis [40,45]. Table 2 reports the various experimental conditions for the synthesis of heterometal-doped copper nanomaterials. ...
In recent years, copper-based nanomaterials have gained significant attention for their practical applications due to their cost-effectiveness, thermal stability, selectivity, high activity, and wide availability. This review focuses on the synthesis and extensive applications of copper nanomaterials in environmental catalysis, addressing knowledge gaps in pollution management. It highlights recent advancements in using copper-based nanomaterials for the remediation of heavy metals, organic pollutants, pharmaceuticals, and other contaminants. Also, it will be helpful to young researchers in improving the suitability of implementing copper-based nanomaterials correctly to establish and achieve sustainable goals for environmental remediation.
... Similarly, many synthesis methods are adopted to obtain doped Cu2O nanostructures such as electrodeposition [34], chemical displacement [35], hydrothermal synthesis [36], biosynthesis [37,38], chemical vapour deposition [39], [40], pulsed laser deposition [41], solvothermal synthesis [42,43] and spray pyrolysis [39,44]. Table 2 reports the various experimental conditions for the synthesis of heterometal doped copper nanomaterials. ...
Copper-based nanomaterials in the last decade attracted many researchers due to their extensive practical applications, unique, inexpensiveness, and wide availability. In addition to this, copper-based nanomaterials possess good thermal stability, and selectivity and also possess high activity. This review emphasis on the recent advances in the synthesis of copper nanomaterials and their wide applications in the field of environmental catalysis. This review aims to fill a significant knowledge gap in the different areas of environmental pollution management. Also, the paper concentrates on the recent applications of copper-based nanomaterials for environmental remediation, including the removal of heavy metals, and degradation of organic pollutants such as pharmaceuticals, and other environmental contaminants. Also, it will be helpful to young researchers in improving the suitability of implementing the Copper nanomaterials in the right way establishing and achieving sustainable goals for environmental remediation.
... The effect of oxygen flow rate in sputtering can further alter the dislocation density of sputtered CuO and Cu 2 O. Number of defects in the material was calculated using Eq. (7) [43], ...
Flexible hollow fiber polymeric membrane based thin film substrate sputtered with thin layer photocatalyst is a novel configuration for photocatalytic applications. This article focuses on the fabrication of copper oxide/ polyvinylidene fluoride thin film hollow fiber membrane (Cu x O/PVDF TF HFM) by using radio frequency (RF) magnetron sputtering of Cu x O over PVDF hollow fiber membrane (HFM). Different phase of copper oxide (Cu x O) detected on the layer of PVDF HFM by X-ray diffraction (XRD) and attenuated total reflectance Fourier-transform infrared spectroscopy (ATR-FTIR) and confirmed by X-ray photoelectron spectroscopy (XPS), depending on oxygen flow rate. 10-20 mL/min O 2 flow rate produces Cu 2 O phase while 25 and 30 mL/min produces CuO phase. Sputtered Cu 2 O/PVDF TF HFM at 20 mL/min O 2 shows bigger grain size of 2.1 nm with 0.35 nm of dislocation density and 0.019 nm of lattice strain. The higher the O 2 flow rate, the thicker and the more uniform the sputtered Cu x O/PVDF TF HFM was produced as indicated by field emission scanning electron microscopy (FESEM). The atomic force microscopy (AFM) analysis showed the increasing surface roughness of the sputtered 10 mL/min Cu x O/PVDF TF HFM at 8.26 nm, as compared to the neat PVDF HFM at 6.15 nm. About 74 % of 2 mg/L bisphenol A (BPA) in synthetic wastewater was successfully photodegraded and filtered while outstanding 91 % removal of BPA in real treated sewage wastewater achieved using 20 mL/min Cu 2 O/PVDF TF HFM after 360 min light irradiation. About 71.33 % of regeneration efficiency was achieved after 3 consecutive cycles that this technique promises the good reusability with strong adhesion capability.
... The effect of oxygen flow rate in sputtering can further alter the dislocation density of sputtered CuO and Cu 2 O. Number of defects in the material was calculated using Eq. (7) [43], ...
Flexible hollow fiber polymeric membrane based thin film substrate sputtered with thin layer photocatalyst is a novel configuration for photocatalytic applications. This article focuses on the fabrication of copper oxide/ polyvinylidene fluoride thin film hollow fiber membrane (Cu x O/PVDF TF HFM) by using radio frequency (RF) magnetron sputtering of Cu x O over PVDF hollow fiber membrane (HFM). Different phase of copper oxide (Cu x O) detected on the layer of PVDF HFM by X-ray diffraction (XRD) and attenuated total reflectance Fourier-transform infrared spectroscopy (ATR-FTIR) and confirmed by X-ray photoelectron spectroscopy (XPS), depending on oxygen flow rate. 10-20 mL/min O 2 flow rate produces Cu 2 O phase while 25 and 30 mL/min produces CuO phase. Sputtered Cu 2 O/PVDF TF HFM at 20 mL/min O 2 shows bigger grain size of 2.1 nm with 0.35 nm of dislocation density and 0.019 nm of lattice strain. The higher the O 2 flow rate, the thicker and the more uniform the sputtered Cu x O/PVDF TF HFM was produced as indicated by field emission scanning electron microscopy (FESEM). The atomic force microscopy (AFM) analysis showed the increasing surface roughness of the sputtered 10 mL/min Cu x O/PVDF TF HFM at 8.26 nm, as compared to the neat PVDF HFM at 6.15 nm. About 74 % of 2 mg/L bisphenol A (BPA) in synthetic wastewater was successfully photodegraded and filtered while outstanding 91 % removal of BPA in real treated sewage wastewater achieved using 20 mL/min Cu 2 O/PVDF TF HFM after 360 min light irradiation. About 71.33 % of regeneration efficiency was achieved after 3 consecutive cycles that this technique promises the good reusability with strong adhesion capability.
... For this reason, researchers have tried to improve the electrical and optical properties of Cu 2 O by incorporating various transition metals such as cobalt [35], iron [35,36], manganese (Mn) [22,35,[37][38][39][40] and nickel [35]. In addition, the incorporation of other elements such as aluminium [41], cerium [42], lithium [43][44][45], magnesium (Mg) [1,43,[46][47][48], silver [41], sodium [44], samarium [49], titanium [44] and zinc [42,43,50] has also been evaluated. ...
... There are many methods to obtain doped Cu 2 O nanostructures, such as biosynthesis [51,52], chemical vapour deposition [46,47], electrodeposition [22], hydrothermal synthesis [37], pulsed laser deposition [40], solvothermal synthesis [38,39] and spray pyrolysis [46,48]. In addition to these methods, the chemical displacement or substitution technique is an interesting but little-explored alternative. ...
Copper oxide (Cu2O) is a promising semiconductor for photovoltaic and photocatalytic applications since this material has a high optical absorption coefficient and lower band gap (2.17 eV). Doped lanthanum (La), magnesium (Mg) and manganese (Mn) Cu2O nanoparticles (Cu2O Nps) were prepared by a displacement reaction. The doped and undoped Cu2O Nps were characterized with scanning electron microscopy–energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), transmission electron microscopy (TEM) and ultraviolet–visible spectroscopy. The EDS results confirm the presence of La, Mg and Mn in the Cu2O Nps. The XRD results confirm the formation a single cubic phase of Cu2O with a cuprite structure. TEM images confirm the formation of Nps with mean diameters between 12.0 ± 6.1 and 30.8 ± 11.0 nm. Doped and undoped Nps present a narrow band gap (2.40 eV), blue shifted with respect to bulk Cu2O.
... In Table 1, we gather the functional properties of Mg:Cu 2 O asdeposited at different plasma pressures to compare the properties of the reported thin films with those found in the literature. Our results show that thin films deposited at 13 mTorr exhibit conductivity values that are one order of magnitude higher than thin films deposited by spray pyrolysis or nebulizer pyrolysis (Fig. 5) [55,56]. On the other hand, in comparison to thin films prepared by AA-CVD, the materials synthesized in this work show the highest values for both the optical gap and the carrier mobility with similar carrier concentrations around 10 17 cm − 3 [19]. ...
Cu2O appears as a promising material for synthesizing p-type transparent semiconducting oxides with low electrical resistivity and high optical transmittance. We report on an exhaustive study of magnesium-doped cuprous oxide layers deposited by radio frequency magnetron sputtering. We present the characterization of the structural and optoelectronic properties of Mg:Cu2O thin films deposited at room temperature with varied argon plasma pressure. As a result, we found that by adjusting the Ar plasma pressure, Mg-doped Cu2O layers with high crystallinity combined with optimal electrical and optical properties can be synthesized. Using a plasma pressure of 13 mTorr, we obtained a transparent p-type material with crystallite size of 15 nm, electrical resistivity of 10.2 Ωcm, and optical band gap of 2.55 eV.
... The effect of oxygen flow rate in sputtering can further alter the dislocation density of sputtered CuO and Cu 2 O. Number of defects in the material was calculated using Eq. (7) [43], ...
