Figure - available from: Journal of Materials Science: Materials in Electronics
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![SEM images of the joints just after the soldering process (3 min at 250 °C) of a joint with an initial thickness of SnAg alloy (eSnAg0\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$({\text{e}}_{\text{SnAg}}^{0}$$\end{document}) equal to 15 µm (a) and 30 µm (b) and after the TLPB process for 1 h (c) and 4 h (d) at 250 °C, respectively. The joints in c and d represent the initial states for the SSR process for eSnAg0\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\text{e}}_{\text{SnAg}}^{0}$$\end{document} =15 and 30 µm, respectively](publication/364883623/figure/fig1/AS:11431281103692998@1669777679505/SEM-images-of-the-joints-just-after-the-soldering-process-3min-at-250C-of-a-joint-with.png)
SEM images of the joints just after the soldering process (3 min at 250 °C) of a joint with an initial thickness of SnAg alloy (eSnAg0\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$({\text{e}}_{\text{SnAg}}^{0}$$\end{document}) equal to 15 µm (a) and 30 µm (b) and after the TLPB process for 1 h (c) and 4 h (d) at 250 °C, respectively. The joints in c and d represent the initial states for the SSR process for eSnAg0\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\text{e}}_{\text{SnAg}}^{0}$$\end{document} =15 and 30 µm, respectively
Source publication
![SEM micrographs of the joints with eSnAg0\documentclass[12pt]{minimal}...](publication/364883623/figure/fig4/AS:11431281103693003@1669777681055/SEM-micrographs-of-the-joints-with-eSnAg0documentclass12ptminimal_Q320.jpg)
The technological advances reached today in semi-conductor devices and their applications increased the challenges in terms of power density. The introduction of new and high-temperature mission profiles made the integrated circuits packaging reach their limit and emerged new reliability issues that did not exist for previous generation devices. As...
Citations
An advanced Pb-free solder interconnect, Cu line/Cu pillar/Ni/Sn1.8Ag/Ag/Cu lead frame/Sn3Ag0.5Cu/Au/Ni(P)/Cu trace, using the flip-chip quad flat no-lead (FCQFN) packaging technology was designed for high-power automobile applications. An electromigration study revealing the Ni and Ag metallization effects on the interfacial reaction was investigated. Current stressing was conducted at a 2 A direct current at 160°C until the defined 200%-electrical-resistance-rise failure occurrence. Electromigration induced a two-stage electrical resistance increase mode in the advanced automobile test vehicle with a mechanism transition time of 585 h, as evidenced by the in situ resistance monitoring. Phase transformation from the constituent phases into the predominant (Cu,Ni)6Sn5 and Cu3Sn intermetallic compounds (IMCs) at the interfaces was proposed to explain the rapid resistance rise in the early-stage electromigration. Void formation and coalescence due to the Kirkendall effect and volume shrinkage during the phase transformation were proposed to explain the following steady resistance increase after the critical current stressing time. Furthermore, the phase transformation and growth of the IMCs behaved divergently at different interfaces and electron flow directions. The rapid phase transformation occurred in the downstream Sn1.8Ag solder interconnect due to the accelerated Ni metallization dissolution and formed a complete IMC joint. The anisotropic diffusion driven by the competitive or synergetic effect between the electron wind force and chemical potential gradient was proposed to explain the asymmetric microstructures after the electromigration experiment. The application of Ag metallization benefited the flip-chip soldering process, and the layer-type Ag3Sn IMC served as a diffusion barrier against Sn/Cu interdiffusion at the solder/Cu lead frame interface during the solid-state electromigration. In contrast, the Ni metallization was designed as a diffusion barrier to hinder interdiffusion and the undesirable Cu3Sn growth at the solder/Cu interface. The findings presented in this study could benefit the solder interconnect design with an appropriate metallization combination against undesirable electromigration failure.
