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Resonance Raman scattering in TlGaSe2 crystals measured at a temperature of 10 K and excited by lines 514.5 nm (a) and 496.5 nm (b) of an Ar⁺ laser in Z(YY)Z geometry.
Source publication
The resonance Raman scattering for geometries Y(YX)Z and Y(ZX)Z at temperature 10 K and infrared reflection spectra in E∥a and E∥b polarizations at 300 K were investigated. The number of Aa ( Ba ) and Au ( Bu ) symmetry vibrational modes observed experimentally and calculated theoretically agree better in this case than when TlGa 2 Se 4 crystals be...
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Citations
... TlGaSe 2 has been investigated up to now especially as single crystal form. The transmission [16], Raman [17], ellipsometry [18,19], photoluminescence [20], thermoluminescence [21], density functional theory [22] are some of the experimental and theoretical studies performed on TlGaSe 2 single crystal. The spectroscopic ellipsometry study [19] on TlGaSe 2 single crystal presented spectral dependencies of refractive index, extinction coefficient and components of complex dielectric function. ...
... Six peaks were observed in the spectrum around 253, 356, 488, 800, 1053 and 1440 cm − 1 . Detailed Raman analyses of TlGaSe 2 was previously reported in Ref. [17]. Taking into account the reported Raman peaks at temperature of T = 10 K, observed lines in the Raman spectrum were assigned to possible combinations represented in Table 1. ...
... The frequencies of observed Raman peaks and their possible phonon combinations according to Ref. [17]. [27]. ...
The present paper reports the structural and optical properties of thermally evaporated TlGaSe2 thin films. X-ray diffraction pattern of evaporated film presented two diffraction peaks around 24.15 and 36.00° which are associated with planes of monoclinic unit cell. Surface morphology of the TlGaSe2 thin films was investigated by scanning electron and atomic force microscopy techniques. Although there was observed some ignorable amount of clusters of quasi-spherical shape in the scanning electron microscope image, the film surface was observed almost uniform. Raman spectrum exhibited six peaks around 253, 356, 488, 800, 1053 and 1440 cm⁻¹ associated with possible vibrational mode combinations. Band gap energy of the thin film was determined as 3.01 eV from the analyses of transmission spectrum. Transmission spectrum presented strong Urbach tail and analyses of corresponding region resulted in Urbach energy of 0.66 eV. The structural and optical properties of deposited TlGaSe2 thin films were compared with those of single crystal. This comparison would provide valuable information about influence of thickness on the studied compounds.
